A method for manufacturing a substrate for manufacturing a display device, according to the present invention, comprises the steps of: (a) forming, at predetermined intervals, assembly electrodes extending in one direction on a base part, and forming a dielectric layer so as to cover the assembly electrodes; (b) forming, on the dielectric layer, metal patterns so as to overlap the assembly electrodes; (c) forming partition parts on the dielectric layer so as to cover the metal patterns, and then forming assembly holes so as to overlap the metal patterns; and (d) removing the metal patterns exposed through the assembly holes, wherein, in step (d), a groove part is formed on the surface of each partition part, which forms the inner surface of each assembly hole, as the metal patterns are removed.

A method for manufacturing a substrate for manufacturing a display device, according to the present invention, comprises the steps of: (a) forming, at predetermined intervals, assembly electrodes extending in one direction on a base part, and forming a dielectric layer so as to cover the assembly electrodes; (b) forming, on the dielectric layer, metal patterns so as to overlap the assembly electrodes; (c) forming partition parts on the dielectric layer so as to cover the metal patterns, and then forming assembly holes so as to overlap the metal patterns; and (d) removing the metal patterns exposed through the assembly holes, wherein, in step (d), a groove part is formed on the surface of each partition part, which forms the inner surface of each assembly hole, as the metal patterns are removed.

A display device includes a first switching element including a second electrode and a first gate electrode, a second switching element including a third electrode connected with the first gate electrode, a third switching element including a fifth electrode connected with the second electrode, and sixth electrode, a fourth switching element including a seventh electrode connected with the second electrode, and an eighth electrode, a fifth switching element including a ninth electrode connected with the second electrode, and a tenth electrode, a first light emitting diode connected with the sixth electrode and the eighth electrode, a second light emitting diode connected with the eighth electrode and the sixth electrode, and a switch selectively connecting a common power source line with the sixth electrode or the eighth electrode. The first light emitting diode and the second light emitting diode have different polarities from each other with respect to a same direction.

A semiconductor light emitting element includes: an n-type semiconductor layer made of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material provided on a substrate; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; and a covering layer made of a dielectric material that covers the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. Each of the active layer and the p-type semiconductor layer has a sloped surface that is sloped at a first angle with respect to the substrate and is covered by the covering layer. The n-type semiconductor layer has a sloped surface that is sloped at a second angle larger than the first angle with respect to the substrate and is covered by the covering layer.

A semiconductor light emitting element includes: an n-type semiconductor layer made of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material provided on a substrate; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; and a covering layer made of a dielectric material that covers the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. Each of the active layer and the p-type semiconductor layer has a sloped surface that is sloped at a first angle with respect to the substrate and is covered by the covering layer. The n-type semiconductor layer has a sloped surface that is sloped at a second angle larger than the first angle with respect to the substrate and is covered by the covering layer.

A micro-LED device of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240) located between the micro-LEDs. The device isolation region includes at least one metal plug (24) electrically coupled with the second semiconductor layer. This device includes a middle layer (300) which includes first contact electrodes (31) electrically coupled with the first semiconductor layer and a second contact electrode (32) coupled with the metal plug, a backplane (400) provided on the middle layer, a phosphor layer (600) capable of converting an electromagnetic wave radiated from each of the plurality of micro-LEDs to white light, and a color filter array (620) supported by the crystal growth substrate with the phosphor layer interposed therebetween, the color filter array being capable of selectively transmitting respective color components of the white light.

A method for manufacturing an inorganic light emitter, include arranging an inorganic light emitting element on one surface of a substrate; separating the inorganic light emitting element from the substrate while forming an oxide layer on a first surface of the inorganic light emitting element by emitting laser light to the first surface under an atmosphere having an oxygen concentration higher than an oxygen concentration of air, the first surface contacting the one surface of the substrate; and stacking the inorganic light emitting element separated at the separating on an array substrate to manufacture the inorganic light emitter.

A method for manufacturing an inorganic light emitter, include arranging an inorganic light emitting element on one surface of a substrate; separating the inorganic light emitting element from the substrate while forming an oxide layer on a first surface of the inorganic light emitting element by emitting laser light to the first surface under an atmosphere having an oxygen concentration higher than an oxygen concentration of air, the first surface contacting the one surface of the substrate; and stacking the inorganic light emitting element separated at the separating on an array substrate to manufacture the inorganic light emitter.

A method for manufacturing a light emitting device includes: providing a wafer that includes, successively from an upper face side, an electrode structure that includes multilayer wiring, a semiconductor layer electrically connected to the electrode structure, and a growth substrate; bonding the wafer to a support substrate; exposing the semiconductor layer by removing the growth substrate from the wafer; separating the semiconductor layer into a plurality of light emitting elements, which comprises forming grooves on a semiconductor layer side surface of the wafer; and forming a phosphor layer having protrusions and recesses at a surface thereof such that the phosphor layer covers surfaces of the light emitting elements, which comprises: forming a coating film on surfaces of the light emitting elements by applying a slurry comprising phosphor particles contained in a solvent, and vaporizing the solvent in the coating film to form the phosphor layer.

A method for manufacturing a light emitting device includes: providing a wafer that includes, successively from an upper face side, an electrode structure that includes multilayer wiring, a semiconductor layer electrically connected to the electrode structure, and a growth substrate; bonding the wafer to a support substrate; exposing the semiconductor layer by removing the growth substrate from the wafer; separating the semiconductor layer into a plurality of light emitting elements, which comprises forming grooves on a semiconductor layer side surface of the wafer; and forming a phosphor layer having protrusions and recesses at a surface thereof such that the phosphor layer covers surfaces of the light emitting elements, which comprises: forming a coating film on surfaces of the light emitting elements by applying a slurry comprising phosphor particles contained in a solvent, and vaporizing the solvent in the coating film to form the phosphor layer.