An ultra-small light-emitting diode (LED) electrode assembly having an improved luminance is provided. More particularly, an ultra-small LED electrode assembly in which light, which is blocked by an electrode and cannot be extracted, is minimized, an ultra-small LED device is connected to an ultra-small electrode without a defect such as an electrical short-circuit, and a very excellent luminance is exhibited even at a direct current (DC) driving voltage, and a method of manufacturing the same are provided.

A substrate for light-emitting diode, a backlight module and a display device are disclosed. The substrate for light-emitting diode includes a plurality of light-emitting sub-regions, and each of the plurality of light-emitting sub-regions includes at least two anode electrode pads electrically connected through a first parallel-connection line, and at least two cathode electrode pads electrically connected through a second parallel-connection line. The at least two cathode electrode pads are disposed in one-to-one correspondence with the at least two anode electrode pads. At least one series-connection electrode pad group is further disposed between the anode electrode pad and the cathode electrode pad which are corresponding to each other; and each of the at least one series-connection electrode pad group includes two series electrode pads which are electrically connected through a series-connection line.

A substrate for light-emitting diode, a backlight module and a display device are disclosed. The substrate for light-emitting diode includes a plurality of light-emitting sub-regions, and each of the plurality of light-emitting sub-regions includes at least two anode electrode pads electrically connected through a first parallel-connection line, and at least two cathode electrode pads electrically connected through a second parallel-connection line. The at least two cathode electrode pads are disposed in one-to-one correspondence with the at least two anode electrode pads. At least one series-connection electrode pad group is further disposed between the anode electrode pad and the cathode electrode pad which are corresponding to each other; and each of the at least one series-connection electrode pad group includes two series electrode pads which are electrically connected through a series-connection line.

A light-emitting apparatus including a circuit substrate and a light-emitting device is provided. The circuit substrate includes a first electrode and a second electrode. The light-emitting device is disposed on a first surface of the circuit substrate. The light-emitting device includes a first conductive terminal and a second conductive terminal. The first conductive terminal and the second conductive terminal are embedded between the first electrode and the second electrode. In a first direction, there is a first distance between an inner edge of the first electrode and an inner edge of the second electrode, there is a second distance between an outer edge of the first conductive terminal and an outer edge of the second conductive terminal, and the first distance is greater than or equal to the second distance.

A light-emitting apparatus including a circuit substrate and a light-emitting device is provided. The circuit substrate includes a first electrode and a second electrode. The light-emitting device is disposed on a first surface of the circuit substrate. The light-emitting device includes a first conductive terminal and a second conductive terminal. The first conductive terminal and the second conductive terminal are embedded between the first electrode and the second electrode. In a first direction, there is a first distance between an inner edge of the first electrode and an inner edge of the second electrode, there is a second distance between an outer edge of the first conductive terminal and an outer edge of the second conductive terminal, and the first distance is greater than or equal to the second distance.

Embodiments of this application disclose a light-emitting diode chip and a preparation method therefor. The chip includes: an N-type GaN doping layer; three sub-pixel structures respectively formed in three sub-pixel regions at a first surface of the N-type GaN doping layer, where each of the three sub-pixel structures includes a blue-light quantum well structure, an interface barrier layer, a green-light quantum well structure, a charge barrier layer, and a P-type GaN doping layer that grow in sequence; three P-type contact electrodes respectively formed on the three sub-pixel structures, and an N-type contact electrode formed in a remaining region other than the three sub-pixel regions at the first surface of the N-type GaN doping layer; and a red-light colloidal quantum dot structure formed in a region that corresponds to a first sub-pixel region in the three sub-pixel regions and that is at a second surface of the N-type GaN doping layer.

A light-emitting device manufacturing method including providing a light-emitting structure including one or more light-emitting elements and a covering member covering the light-emitting elements. Each of the light-emitting elements have first and second electrodes. The light-emitting structure has a first surface and a second surface opposite to the first surface, and lower surfaces of the first and second electrodes of each light-emitting element are closer to the first surface than the second surface. The method further includes forming a groove structure on the first surface side by irradiation with laser light such that at least part of the first and second electrodes are exposed to an inside of the groove structure, and forming a plurality of wirings inside of the groove structure.

A light-emitting device manufacturing method including providing a light-emitting structure including one or more light-emitting elements and a covering member covering the light-emitting elements. Each of the light-emitting elements have first and second electrodes. The light-emitting structure has a first surface and a second surface opposite to the first surface, and lower surfaces of the first and second electrodes of each light-emitting element are closer to the first surface than the second surface. The method further includes forming a groove structure on the first surface side by irradiation with laser light such that at least part of the first and second electrodes are exposed to an inside of the groove structure, and forming a plurality of wirings inside of the groove structure.

A semiconductor light emitting element includes: an n-type semiconductor layer made of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material provided on a substrate; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; and a covering layer made of a dielectric material that covers the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. Each of the active layer and the p-type semiconductor layer has a sloped surface that is sloped at a first angle with respect to the substrate and is covered by the covering layer. The n-type semiconductor layer has a sloped surface that is sloped at a second angle larger than the first angle with respect to the substrate and is covered by the covering layer.

A semiconductor light emitting element includes: an n-type semiconductor layer made of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material provided on a substrate; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; and a covering layer made of a dielectric material that covers the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. Each of the active layer and the p-type semiconductor layer has a sloped surface that is sloped at a first angle with respect to the substrate and is covered by the covering layer. The n-type semiconductor layer has a sloped surface that is sloped at a second angle larger than the first angle with respect to the substrate and is covered by the covering layer.