An LED has: a substrate formed as a substrate layer; a buffer layer formed on the substrate layer; and an N− doped layer formed on the buffer layer. A first dual color blue/green MQW active region, a negative electrode, and a second dual color blue/green MQW active region formed on the N− doped layer. A first P− doped layer is formed on the first dual color blue green MQW active region. A second P− doped layer is formed on the second dual color blue green MQW active region. A first P+ doped layer is formed on the first P− doped layer. A second P+ doped layer is formed on the second P− doped layer. A first positive electrode is formed on the first P+ doped layer. A second positive electrode is formed on the second P+ doped layer. A blue/green LED with red luminescence materials emits a full spectrum.

An LED has: a substrate formed as a substrate layer; a buffer layer formed on the substrate layer; and an N− doped layer formed on the buffer layer. A first dual color blue/green MQW active region, a negative electrode, and a second dual color blue/green MQW active region formed on the N− doped layer. A first P− doped layer is formed on the first dual color blue green MQW active region. A second P− doped layer is formed on the second dual color blue green MQW active region. A first P+ doped layer is formed on the first P− doped layer. A second P+ doped layer is formed on the second P− doped layer. A first positive electrode is formed on the first P+ doped layer. A second positive electrode is formed on the second P+ doped layer. A blue/green LED with red luminescence materials emits a full spectrum.

A micro-LED device of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240) located between the micro-LEDs. The device isolation region includes at least one metal plug (24) electrically coupled with the second semiconductor layer. This device includes a middle layer (300) which includes first contact electrodes (31) electrically coupled with the first semiconductor layer and a second contact electrode (32) coupled with the metal plug, a backplane (400) provided on the middle layer, a plurality of recesses (660) formed in the substrate where the blue light radiated from the micro-LEDs respectively enters, and a red phosphor (66R), a green phosphor (66G) and a blue scatterer (66B) respectively provided in the plurality of recesses of the substrate.

[Object] A light-emitting element includes: a semiconductor layer; a first electrode portion; a second electrode portion; a first insulating layer; and a metal layer. The semiconductor layer includes an active layer, a first-conductivity-type layer, and a second-conductivity-type layer, and has a semiconductor-layer side surface including a side surface of the active layer, a side surface of the first-conductivity-type layer, and a side surface of the second-conductivity-type layer. The first electrode portion is connected to the first-conductivity-type layer. The second electrode portion is connected to the second-conductivity-type layer. The first insulating layer is in contact at least with a part of the semiconductor-layer side surface, the part of the semiconductor-layer side surface corresponding to a part of the side surface of the active layer. The metal layer is in contact at least with an opposed surface of the first insulating layer, the opposed surface of the first insulating layer facing the side surface of the active layer. The metal layer is conducted to the first electrode portion and insulated from the second electrode portion.

A display including a base, a plurality of pixels disposed on the base in rows and columns, at least one of the pixels including a first interconnect and a plurality of second interconnects, and a plurality of mounting portions on which a plurality of sub-pixels is to be mounted, in which a first portion of each of the plurality of mounting portions is electrically connected to the first interconnect, a second portion of each of the plurality of mounting portions is electrically connected to one of the second interconnects, and at least one of the plurality of sub-pixels mounted on the plurality of mounting portions is configured to emit light of different wavelength.

A light emitting diode having multiple tunnel junctions is provided. This comprises the common contact layer, the first and second tunnel junction layers respectively disposed on the bottom surface and the upper surface of the common contact layer, the first light emitting structure disposed on the bottom surface of the first tunnel junction layer and the second light emitting structure disposed on the upper surface of the second tunnel junction layer. Light emitting structures emitting blue and green light may be disposed above and below the common contact layer. By injecting holes into the first light emitting structure and the second light emitting structure through the common contact layer formed of the n-type semiconductor, current spreading effect is improved, leading to improved light emitting efficiency. Since the n-type semiconductor layer can be disposed on the upper surface exposed to the outside, risk of damage occurring in subsequent fabrication steps can be reduced.

In at least one embodiment, the optoelectronic semiconductor chip (100) comprises a semiconductor layer sequence (1) having an active layer (10), a doped current spreading layer (11) and an output coupling layer (12), which are arranged one above the other in this order. The active layer generates primary radiation during intended operation. The current spreading layer comprises a larger lateral electrical conductivity than the output coupling layer. The output coupling layer comprises output coupling structures (121) for coupling out radiation on an exit side (120) facing away from the active layer. The output coupling layer comprises a lower absorption coefficient for primary radiation than the current spreading layer.

An electronic device is provided, including a substrate, a plurality of bonding pads, and a plurality of light emitting members. The bonding pads are disposed on the substrate. The light emitting members are disposed on the bonding pads. The light emitting members include a first pair of adjacent light-emitting members, a second pair of adjacent light-emitting members, and a third pair of adjacent light-emitting members. The first pair of adjacent light-emitting members, the second pair of adjacent light-emitting members, and the third pair of adjacent light-emitting members are arranged along the first direction in sequence. The first pair of adjacent light-emitting members has a first pitch, the second pair of adjacent light-emitting members has a second pitch, and the third pair of adjacent light-emitting members has a third pitch. The third pitch is greater than the second pitch, and the second pitch is greater than the first pitch.

An electronic device is provided, including a substrate, a plurality of bonding pads, and a plurality of light emitting members. The bonding pads are disposed on the substrate. The light emitting members are disposed on the bonding pads. The light emitting members include a first pair of adjacent light-emitting members, a second pair of adjacent light-emitting members, and a third pair of adjacent light-emitting members. The first pair of adjacent light-emitting members, the second pair of adjacent light-emitting members, and the third pair of adjacent light-emitting members are arranged along the first direction in sequence. The first pair of adjacent light-emitting members has a first pitch, the second pair of adjacent light-emitting members has a second pitch, and the third pair of adjacent light-emitting members has a third pitch. The third pitch is greater than the second pitch, and the second pitch is greater than the first pitch.

A color emissive LED array comprising a backplane and a plurality of color emissive LED units disposed in an array on the backplane, whereas the thickness of a first color emissive LED unit is less than the thickness of a second color emissive LED unit and less than the thickness of the third color emissive LED unit; wherein the color emissive LED units is formed by at least one of vertical configuration structure or flip chip configuration LED structure.