H01L33/36

Light-emitting element and manufacturing method thereof
11050000 · 2021-06-29 · ·

A light-emitting element, includes a substrate; and a semiconductor stack formed on the substrate, including: a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type; and a light-emitting stack formed between the first and second semiconductor layers; wherein in a cross-sectional view, an inner region of the first semiconductor layer includes a first region with a first thickness, and an edge of the first semiconductor layer includes a second region with a second thickness larger than the first thickness.

Light-emitting element and manufacturing method thereof
11050000 · 2021-06-29 · ·

A light-emitting element, includes a substrate; and a semiconductor stack formed on the substrate, including: a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type; and a light-emitting stack formed between the first and second semiconductor layers; wherein in a cross-sectional view, an inner region of the first semiconductor layer includes a first region with a first thickness, and an edge of the first semiconductor layer includes a second region with a second thickness larger than the first thickness.

LIGHT EMITTING MODULE AND METHOD OF MANUFACTURING THE SAME

A light emitting module includes: a plurality of light emitting elements each having a primary light emitting surface and a lateral surface; a plurality of wavelength conversion members arranged respectively on the primary light emitting surfaces of the plurality of light emitting elements; and a lightguide plate having a first primary surface and a second primary surface and arranged continuously on the plurality of wavelength conversion members so that the second primary surface faces the plurality of wavelength conversion members, wherein the lightguide plate includes a plurality of recessed portions located on the second primary surface, and a lateral surface of at least one of the plurality of wavelength conversion members is partially in contact with an inner lateral surface of at least one of the plurality of recessed portions.

LIGHT EMITTING MODULE AND METHOD OF MANUFACTURING THE SAME

A light emitting module includes: a plurality of light emitting elements each having a primary light emitting surface and a lateral surface; a plurality of wavelength conversion members arranged respectively on the primary light emitting surfaces of the plurality of light emitting elements; and a lightguide plate having a first primary surface and a second primary surface and arranged continuously on the plurality of wavelength conversion members so that the second primary surface faces the plurality of wavelength conversion members, wherein the lightguide plate includes a plurality of recessed portions located on the second primary surface, and a lateral surface of at least one of the plurality of wavelength conversion members is partially in contact with an inner lateral surface of at least one of the plurality of recessed portions.

Light-emitting device with a plurality of electrodes on a semiconductor stack

A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

Display device and method of manufacturing the same
11114500 · 2021-09-07 · ·

A display device includes a substrate including a display area having a plurality of pixel areas and a non-display area located around the display area; a circuit element layer including a circuit element in each of the pixel areas and a reference voltage wiring in the non-display area, the reference voltage wiring being electrically coupled to the circuit element; and a display element layer including a first pixel electrode on the circuit element layer in each of the pixel areas, a second pixel electrode located opposite to the first pixel electrode, a plurality of light emitting elements between the first pixel electrode and the second pixel electrode, and a first wiring on the circuit element layer in the non-display area, wherein the first wiring is directly coupled to the reference voltage wiring in the non-display area.

Display device and method of manufacturing the same
11114500 · 2021-09-07 · ·

A display device includes a substrate including a display area having a plurality of pixel areas and a non-display area located around the display area; a circuit element layer including a circuit element in each of the pixel areas and a reference voltage wiring in the non-display area, the reference voltage wiring being electrically coupled to the circuit element; and a display element layer including a first pixel electrode on the circuit element layer in each of the pixel areas, a second pixel electrode located opposite to the first pixel electrode, a plurality of light emitting elements between the first pixel electrode and the second pixel electrode, and a first wiring on the circuit element layer in the non-display area, wherein the first wiring is directly coupled to the reference voltage wiring in the non-display area.

Display device and method of fabricating the same

A display device includes a light-emitting diode including a first conductivity-type semiconductor, an active layer, and a second conductivity-type semiconductor; a first voltage line to which a first voltage is applied; a second voltage line to which a second voltage is applied; a first transistor including a source electrode electrically connected to the first voltage line and a drain electrode electrically connected to a first electrode of the light-emitting diode and to the first conductivity-type semiconductor; a second transistor including a drain electrode electrically connected to a gate electrode of the first transistor and a source electrode electrically connected to a data line to apply a data signal; a capacitor electrically connected to the gate electrode of the first transistor and the first electrode; and a third transistor including a source electrode electrically connected to the second voltage line and a drain electrode electrically connected to the first electrode.

Display device and method of fabricating the same

A display device includes a light-emitting diode including a first conductivity-type semiconductor, an active layer, and a second conductivity-type semiconductor; a first voltage line to which a first voltage is applied; a second voltage line to which a second voltage is applied; a first transistor including a source electrode electrically connected to the first voltage line and a drain electrode electrically connected to a first electrode of the light-emitting diode and to the first conductivity-type semiconductor; a second transistor including a drain electrode electrically connected to a gate electrode of the first transistor and a source electrode electrically connected to a data line to apply a data signal; a capacitor electrically connected to the gate electrode of the first transistor and the first electrode; and a third transistor including a source electrode electrically connected to the second voltage line and a drain electrode electrically connected to the first electrode.

PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF, AND DISPLAY HAVING THE SAME

A pixel structure includes an original light emitting diode die and a repairing light emitting diode die emitting light of a same color, and an extending conductor. The original light emitting diode die includes a first epitaxial layer, and a first electrode and a second electrode disposed at opposite sides of the first epitaxial layer. The repairing light emitting diode die includes a second epitaxial layer, and a third electrode and a fourth electrode disposed at a same side of the second epitaxial layer. The extending conductor includes a first portion, a second portion and a cut-off region. The first portion is electrically connected to the second electrode of the original light emitting diode die. The second portion is electrically connected to the third electrode of the repairing light emitting diode die. The cut-off region is located in the first portion or between the first portion and the second portion.