The anti-fouling load arrangement uses the hull of a vessel as one plate of a capacitor to capacitively couple an electrode of the anti-fouling load arrangement to a power source within the hull. The other electrode of the anti-fouling load arrangement receives current from the power source via a wire, or via the conductivity of the sea water, which may be enhanced by the presence of a conductive plate on the surface of the water. A plurality of anti-fouling load arrangements may be applied to the hull as flexible tiles, or rigid tiles that conform to the shape of the hull.

The anti-fouling load arrangement uses the hull of a vessel as one plate of a capacitor to capacitively couple an electrode of the anti-fouling load arrangement to a power source within the hull. The other electrode of the anti-fouling load arrangement receives current from the power source via a wire, or via the conductivity of the sea water, which may be enhanced by the presence of a conductive plate on the surface of the water. A plurality of anti-fouling load arrangements may be applied to the hull as flexible tiles, or rigid tiles that conform to the shape of the hull.

A system and method providing correlated color temperature-tunable (CCT-tunable) white light using a laser diode(s) in conjunction with a III-Nitride nanowires-based LED element grown on a semi-transparent substrate. The tunability spans across yellow, amber, and red wavelengths and can be implemented by current injection. The current-dependent broad wavelength tunability enables control of wide range of CCT values (intensity, peak wavelength, and spectral coverage). The broad coverage in the yellow-amber-red color regime mimics that of a passive yellow phosphor, while the injection of current into the LED element defines an active phosphor element. The semi-transparent active phosphor element allows direct transmission of light from a laser diode(s) for achieving extreme wide tunability of CCT.

A system and method providing correlated color temperature-tunable (CCT-tunable) white light using a laser diode(s) in conjunction with a III-Nitride nanowires-based LED element grown on a semi-transparent substrate. The tunability spans across yellow, amber, and red wavelengths and can be implemented by current injection. The current-dependent broad wavelength tunability enables control of wide range of CCT values (intensity, peak wavelength, and spectral coverage). The broad coverage in the yellow-amber-red color regime mimics that of a passive yellow phosphor, while the injection of current into the LED element defines an active phosphor element. The semi-transparent active phosphor element allows direct transmission of light from a laser diode(s) for achieving extreme wide tunability of CCT.

A light-emitting device package includes a first lead frame; a second lead frame separated from the first lead frame in a first direction; a package body having a cavity exposing a portion of the second lead frame. Further, the cavity includes an inclined inner surface inclining with respect to an upper surface of the second lead frame; a light-emitting diode disposed on the exposed portion of the second lead frame; a hole in the inclined inner surface of the cavity and exposing a portion of the first lead frame; a protection device disposed in the hole and on the exposed portion of the first lead frame; a first wire having a first end connected to the light-emitting diode, and a second end connected to the first lead frame; a second wire having a first end connected to the light-emitting diode, and a second end connected to the second lead frame; and a third wire having a first end connected to the protection device, and a second end connected to the exposed portion of the second lead frame.

A light-emitting device package includes a first lead frame; a second lead frame separated from the first lead frame in a first direction; a package body having a cavity exposing a portion of the second lead frame. Further, the cavity includes an inclined inner surface inclining with respect to an upper surface of the second lead frame; a light-emitting diode disposed on the exposed portion of the second lead frame; a hole in the inclined inner surface of the cavity and exposing a portion of the first lead frame; a protection device disposed in the hole and on the exposed portion of the first lead frame; a first wire having a first end connected to the light-emitting diode, and a second end connected to the first lead frame; a second wire having a first end connected to the light-emitting diode, and a second end connected to the second lead frame; and a third wire having a first end connected to the protection device, and a second end connected to the exposed portion of the second lead frame.

An optoelectronic device includes a semiconductor stack; a current blocking region, including a first pad portion formed on the semiconductor stack and wherein the current blocking region includes transparent insulated material; a first opening, formed in the first pad portion, exposing a top surface of the semiconductor stack; a transparent conductive layer, covering the current blocking region and/or a surface of the semiconductor stack, including a second opening exposing the first opening; and a first electrode, formed on the semiconductor stack, including a first pad electrode formed on the first pad portion of the current blocking region; wherein the first pad electrode contacts the semiconductor stack through the first opening and the second opening; wherein the first opening includes a first area, the first pad portion and the first opening compose a total area, and a ratio of the first area to the total area is between 10% and 40%.

An optoelectronic device includes a semiconductor stack; a current blocking region, including a first pad portion formed on the semiconductor stack and wherein the current blocking region includes transparent insulated material; a first opening, formed in the first pad portion, exposing a top surface of the semiconductor stack; a transparent conductive layer, covering the current blocking region and/or a surface of the semiconductor stack, including a second opening exposing the first opening; and a first electrode, formed on the semiconductor stack, including a first pad electrode formed on the first pad portion of the current blocking region; wherein the first pad electrode contacts the semiconductor stack through the first opening and the second opening; wherein the first opening includes a first area, the first pad portion and the first opening compose a total area, and a ratio of the first area to the total area is between 10% and 40%.

A semiconductor continuous array layer comprising: an array of multiple semiconductor units; a sidewall of each semiconductor unit is surrounded by a semi-cured material or a cured material connecting the semiconductor units together to form a semiconductor continuous array; wherein multiple voids or air gaps are enclosed by the semi-cured material or the cured material within the semiconductor continuous array or around the edge of the semiconductor continuous array.

A semiconductor continuous array layer comprising: an array of multiple semiconductor units; a sidewall of each semiconductor unit is surrounded by a semi-cured material or a cured material connecting the semiconductor units together to form a semiconductor continuous array; wherein multiple voids or air gaps are enclosed by the semi-cured material or the cured material within the semiconductor continuous array or around the edge of the semiconductor continuous array.