A Light Emitting Diode (LED) component includes a lead frame and an LED that is electrically connected to the lead frame without wire bonds, using a solder layer. The lead frame includes a metal anode pad, a metal cathode pad and a plastic cup. The LED die includes LED die anode and cathode contacts with a solder layer on them. The metal anode pad, metal cathode pad, plastic cup and/or the solder layer are configured to facilitate the direct die attach of the LED die to the lead frame without wire bonds. Related fabrication methods are also described.

A Light Emitting Diode (LED) component includes a lead frame and an LED that is electrically connected to the lead frame without wire bonds, using a solder layer. The lead frame includes a metal anode pad, a metal cathode pad and a plastic cup. The LED die includes LED die anode and cathode contacts with a solder layer on them. The metal anode pad, metal cathode pad, plastic cup and/or the solder layer are configured to facilitate the direct die attach of the LED die to the lead frame without wire bonds. Related fabrication methods are also described.

A surface-mountable electrical device, an assembly including the surface-mountable electrical device, and a method for producing the surface-mountable electrical device is provided. The surface-mountable electrical device includes at least one electrical component which is a semiconductor component and which is intended for generating radiation, a control circuit for pulsed operation of the component, and a capacitor which is connected to the component electrically in series and which is configured for the pulsed energization of the component. The surface-mountable electrical device further includes a lead frame assembly having a plurality of different lead frames as a mounting platform for the component, the capacitor and the control circuit, wherein at least one of the different lead frames of the lead frame assembly is thinner than a further lead frame of the different lead frames and the lead frame assembly lies only partially in a mounting side of the device.

A surface-mountable electrical device, an assembly including the surface-mountable electrical device, and a method for producing the surface-mountable electrical device is provided. The surface-mountable electrical device includes at least one electrical component which is a semiconductor component and which is intended for generating radiation, a control circuit for pulsed operation of the component, and a capacitor which is connected to the component electrically in series and which is configured for the pulsed energization of the component. The surface-mountable electrical device further includes a lead frame assembly having a plurality of different lead frames as a mounting platform for the component, the capacitor and the control circuit, wherein at least one of the different lead frames of the lead frame assembly is thinner than a further lead frame of the different lead frames and the lead frame assembly lies only partially in a mounting side of the device.

An organic EL element includes a pixel electrode, a light emitting function layer that is formed on the pixel electrode, an electron injection layer formed on the light emitting function layer, and a counter electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity, in which the counter electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and an adsorption layer is formed on the counter electrode.

An organic EL element includes a pixel electrode, a light emitting function layer that is formed on the pixel electrode, an electron injection layer formed on the light emitting function layer, and a counter electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity, in which the counter electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and an adsorption layer is formed on the counter electrode.

A light emitting diode package includes an upper housing and a lower housing. The upper housing includes a first light emitting diode (LED) chip arranged therein, a second LED chip arranged to be spaced apart from the first LED chip in a first direction, two light discharge structures, first electrodes formed on a lower surface of the first LED chip, and second electrodes formed on a lower surface of the second LED chip. The lower housing includes at least three grooves at a lower surface thereof. The lower housing further includes three or more pads. The first pair of via-holes are arranged to connect the first electrodes to one or more of the pads in a second direction perpendicular to the first direction. The second pair of via-holes are arranged to connect the second electrodes to one or more of the pads in the second direction.

A light emitting diode package includes an upper housing and a lower housing. The upper housing includes a first light emitting diode (LED) chip arranged therein, a second LED chip arranged to be spaced apart from the first LED chip in a first direction, two light discharge structures, first electrodes formed on a lower surface of the first LED chip, and second electrodes formed on a lower surface of the second LED chip. The lower housing includes at least three grooves at a lower surface thereof. The lower housing further includes three or more pads. The first pair of via-holes are arranged to connect the first electrodes to one or more of the pads in a second direction perpendicular to the first direction. The second pair of via-holes are arranged to connect the second electrodes to one or more of the pads in the second direction.

A semiconductor device comprises a substrate and a plurality of emitters disposed on the substrate. The emitter may comprise: a first conductive reflection layer having a first reflectivity; an active layer disposed on the first conductive reflection layer; an aperture layer disposed on the active layer and comprising an aperture region and a blocking region surrounding the aperture region; and a second conductive reflection layer disposed on the aperture layer and having a second reflectivity smaller than the first reflectivity. A diameter-to-pitch ratio of the aperture region of the aperture layer is 1:3 to 1:5, wherein the pitch may be defined as the distance between centers of aperture regions of aperture layers of adjacent emitters.

A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and a semiconductor device package including the semiconductor device. The active layer includes a plurality of barrier layers and a plurality of well layers. The second conductive semiconductor layer includes a conductive second semiconductor layer and a conductive first semiconductor layer provided on the conductive second semiconductor layer. The conductive second semiconductor layer has a higher aluminum composition than the well layers, and the conductive first semiconductor layer has a lower aluminum composition than the well layers.