Embodiments relate to functional test methods useful for fabricating products containing Light Emitting Diode (LED) structures. In particular, LED arrays are functionally tested by injecting current via a displacement current coupling device using a field plate comprising of an electrode and insulator placed in close proximity to the LED array. A controlled voltage waveform is then applied to the field plate electrode to excite the LED devices in parallel for high-throughput. A camera records the individual light emission resulting from the electrical excitation to yield a function test of a plurality of LED devices. Changing the voltage conditions can excite the LEDs at differing current density levels to functionally measure external quantum efficiency and other important device functional parameters.

Embodiments relate to functional test methods useful for fabricating products containing Light Emitting Diode (LED) structures. In particular, LED arrays are functionally tested by injecting current via a displacement current coupling device using a field plate comprising of an electrode and insulator placed in close proximity to the LED array. A controlled voltage waveform is then applied to the field plate electrode to excite the LED devices in parallel for high-throughput. A camera records the individual light emission resulting from the electrical excitation to yield a function test of a plurality of LED devices. Changing the voltage conditions can excite the LEDs at differing current density levels to functionally measure external quantum efficiency and other important device functional parameters.

A light emitting element is disclosed. The light emitting element includes: an LED chip including a light emitting semiconductor stack and first and second electrode pads disposed under the light emitting semiconductor stack and spaced apart from each other; a substrate mounted with the LED chip and including a first electrode corresponding to the first electrode pad and a second electrode corresponding to the second electrode pad; a first solder portion connecting the first electrode pad and the first electrode; and a second solder portion connecting the second electrode pad and the second electrode. The first solder portion and the second solder portion are formed without escaping from the mounting area of the LED chip on the substrate by heating a solder material to its melting point or above with an IR laser.

A light emitting element is disclosed. The light emitting element includes: an LED chip including a light emitting semiconductor stack and first and second electrode pads disposed under the light emitting semiconductor stack and spaced apart from each other; a substrate mounted with the LED chip and including a first electrode corresponding to the first electrode pad and a second electrode corresponding to the second electrode pad; a first solder portion connecting the first electrode pad and the first electrode; and a second solder portion connecting the second electrode pad and the second electrode. The first solder portion and the second solder portion are formed without escaping from the mounting area of the LED chip on the substrate by heating a solder material to its melting point or above with an IR laser.

A flip-chip light emitting device includes a transparent substrate, an epitaxial light-emitting structure, a transparent bonding layer interposed between the transparent substrate and the light-emitting structure, and a protective insulating layer disposed over the light-emitting structure and the bonding layer. The transparent bonding layer has a smaller-thickness section that has a first contact surface for the protective insulating layer to be disposed thereover, and a larger-thickness section that has a second contact surface meshing with and bonded to a roughened bottom surface of the light-emitting structure. The first contact surface is smaller in roughness than the second contact surface. A method for producing the device is also disclosed.

A light-emitting device includes an epitaxial structure, and first and second electrodes. The epitaxial structure has a first surface and a second surface opposite to each other, first dislocation density regions and second dislocation density regions. The first dislocation density regions and the second dislocation density regions are alternately disposed between the first surface and the second surface. A dislocation density of each first dislocation density region is lower than a dislocation density of each second dislocation density region and a quantity of the first dislocation density regions is at least ten. The epitaxial structure further includes a light-emitting layer, a first-type semiconductor layer and a second-type semiconductor layer disposed on two opposite sides of the light-emitting layer. The first electrode and the second electrode are electrically connected to the first-type semiconductor layer and the second-type semiconductor layer, respectively. A light-emitting device structure adopting the light-emitting device is provided.

A light-emitting device includes an epitaxial structure, and first and second electrodes. The epitaxial structure has a first surface and a second surface opposite to each other, first dislocation density regions and second dislocation density regions. The first dislocation density regions and the second dislocation density regions are alternately disposed between the first surface and the second surface. A dislocation density of each first dislocation density region is lower than a dislocation density of each second dislocation density region and a quantity of the first dislocation density regions is at least ten. The epitaxial structure further includes a light-emitting layer, a first-type semiconductor layer and a second-type semiconductor layer disposed on two opposite sides of the light-emitting layer. The first electrode and the second electrode are electrically connected to the first-type semiconductor layer and the second-type semiconductor layer, respectively. A light-emitting device structure adopting the light-emitting device is provided.

A detection substrate, a preparation method thereof, a detection device and a detection method are provided. A detection substrate includes a base substrate, wherein the base substrate includes multiple through holes, and electrode columns are embedded in the multiple through holes; the base substrate comprises a detection region and a bonding pad region, the detection region includes a driving circuit, and the bonding pad region is provided with bonding pads; and the bonding pads are connected with the electrode columns through the driving circuit.

A detection substrate, a preparation method thereof, a detection device and a detection method are provided. A detection substrate includes a base substrate, wherein the base substrate includes multiple through holes, and electrode columns are embedded in the multiple through holes; the base substrate comprises a detection region and a bonding pad region, the detection region includes a driving circuit, and the bonding pad region is provided with bonding pads; and the bonding pads are connected with the electrode columns through the driving circuit.

A display apparatus includes a substrate, a light-emitting device provided on the substrate, a driving transistor device configured to control the light-emitting device, a first power supply line electrically connected to a source region of the driving transistor device, a conductive pattern electrically connected to a gate electrode of the driving transistor device, and a second power supply line electrically connected to the first power supply line, wherein the conductive pattern and the first power supply line constitute a first capacitor, and the conductive pattern and the second power supply line constitute a second capacitor, wherein the first capacitor and the second capacitor are connected in parallel.