An optoelectronic device includes a semiconductor stack; a current blocking region, including a first pad portion formed on the semiconductor stack and wherein the current blocking region includes insulated material; a first opening, formed in the first pad portion, exposing a top surface of the semiconductor stack; a transparent conductive layer, formed on the current blocking region and/or the top surface of the semiconductor stack, including a second opening exposing the first opening; and a first electrode, formed on the transparent conductive layer and including a first pad electrode formed on the first pad portion of the current blocking region and electrically connecting to the semiconductor stack through the first opening; wherein in a top view, the first opening and the second opening have different shapes.

An optoelectronic device includes a semiconductor stack; a current blocking region, including a first pad portion formed on the semiconductor stack and wherein the current blocking region includes insulated material; a first opening, formed in the first pad portion, exposing a top surface of the semiconductor stack; a transparent conductive layer, formed on the current blocking region and/or the top surface of the semiconductor stack, including a second opening exposing the first opening; and a first electrode, formed on the transparent conductive layer and including a first pad electrode formed on the first pad portion of the current blocking region and electrically connecting to the semiconductor stack through the first opening; wherein in a top view, the first opening and the second opening have different shapes.

A light emitting device includes a substrate. A thin film transistor is disposed on the substrate. A first electrode is connected to the thin film transistor. A second electrode at least partially overlaps the first electrode. A first partition wall is disposed between the first electrode and the second electrode. An insulating layer is disposed between the thin film transistor and the first electrode. The insulating layer includes a first part having a first thickness and a second part having a second thickness that is different than the first thickness. The second part of the insulating layer at least partially overlaps the first partition wall.

A light emitting device includes a substrate. A thin film transistor is disposed on the substrate. A first electrode is connected to the thin film transistor. A second electrode at least partially overlaps the first electrode. A first partition wall is disposed between the first electrode and the second electrode. An insulating layer is disposed between the thin film transistor and the first electrode. The insulating layer includes a first part having a first thickness and a second part having a second thickness that is different than the first thickness. The second part of the insulating layer at least partially overlaps the first partition wall.

The present application provides a light emitting device, a method for making the same and a display apparatus. The light emitting device includes: a driving backplane; at least one set of driving electrodes disposed on the driving backplane, each set of driving electrodes including a first driving electrode and a second driving electrode; an epitaxial layer located on a side of the at least one set of driving electrodes away from the driving backplane; and at least one set of metal electrodes located on a side of the epitaxial layer close to the driving backplane, each set of metal electrodes including a first metal electrode and a second metal electrode, the first metal electrode and the second metal electrode being respectively connected to a first driving electrode and a second driving electrode, and a filling material being disposed between the first metal electrode and the second metal electrode.

The present application provides a light emitting device, a method for making the same and a display apparatus. The light emitting device includes: a driving backplane; at least one set of driving electrodes disposed on the driving backplane, each set of driving electrodes including a first driving electrode and a second driving electrode; an epitaxial layer located on a side of the at least one set of driving electrodes away from the driving backplane; and at least one set of metal electrodes located on a side of the epitaxial layer close to the driving backplane, each set of metal electrodes including a first metal electrode and a second metal electrode, the first metal electrode and the second metal electrode being respectively connected to a first driving electrode and a second driving electrode, and a filling material being disposed between the first metal electrode and the second metal electrode.

A semiconductor heterostructure for an optoelectronic device with improved light emission is disclosed. The heterostructure can include a first semiconductor layer having a first index of refraction n1. A second semiconductor layer can be located over the first semiconductor layer. The second semiconductor layer can include a laminate of semiconductor sublayers having an effective index of refraction n2. A third semiconductor layer having a third index of refraction n3 can be located over the second semiconductor layer. The first index of refraction n1 is greater than the second index of refraction n2, which is greater than the third index of refraction n3.

A semiconductor heterostructure for an optoelectronic device with improved light emission is disclosed. The heterostructure can include a first semiconductor layer having a first index of refraction n1. A second semiconductor layer can be located over the first semiconductor layer. The second semiconductor layer can include a laminate of semiconductor sublayers having an effective index of refraction n2. A third semiconductor layer having a third index of refraction n3 can be located over the second semiconductor layer. The first index of refraction n1 is greater than the second index of refraction n2, which is greater than the third index of refraction n3.

An electronic device is provided, including a substrate, a plurality of bonding pads, and a plurality of light emitting members, wherein the bonding pads are disposed on the substrate, and the light emitting members are disposed on the bonding pads. The light emitting members include a first pair of adjacent light-emitting members, a second pair of adjacent light-emitting members, and a third pair of adjacent light-emitting members. The first pair of adjacent light-emitting members, the second pair of adjacent light-emitting members, and the third pair of adjacent light-emitting members are arranged along the first direction in sequence. The first pair of adjacent light-emitting members has a first pitch, the second pair of adjacent light-emitting members has a second pitch, and the third pair of adjacent light-emitting members has a third pitch. The third pitch is greater than the second pitch, and the second pitch is greater than the first pitch.

An electronic device is provided, including a substrate, a plurality of bonding pads, and a plurality of light emitting members, wherein the bonding pads are disposed on the substrate, and the light emitting members are disposed on the bonding pads. The light emitting members include a first pair of adjacent light-emitting members, a second pair of adjacent light-emitting members, and a third pair of adjacent light-emitting members. The first pair of adjacent light-emitting members, the second pair of adjacent light-emitting members, and the third pair of adjacent light-emitting members are arranged along the first direction in sequence. The first pair of adjacent light-emitting members has a first pitch, the second pair of adjacent light-emitting members has a second pitch, and the third pair of adjacent light-emitting members has a third pitch. The third pitch is greater than the second pitch, and the second pitch is greater than the first pitch.