A LED display device is provided in the present disclosure, including multiple pixel units arranged in array on the substrate. Each of the pixel units includes three LEDs with different emitting colors. In each row of the pixel units, a first electrode of each LED is connected directly with a lateral through line. In each column of the pixel units, a second electrode of a red LED is electrically connected with a first vertical through line via a first via hole, a second electrode of a green LED is electrically connected with a second vertical through line via a second via hole, and a second electrode of a blue LED is electrically connected with a second vertical through line via a third via hole.

A LED display device is provided in the present disclosure, including multiple pixel units arranged in array on the substrate. Each of the pixel units includes three LEDs with different emitting colors. In each row of the pixel units, a first electrode of each LED is connected directly with a lateral through line. In each column of the pixel units, a second electrode of a red LED is electrically connected with a first vertical through line via a first via hole, a second electrode of a green LED is electrically connected with a second vertical through line via a second via hole, and a second electrode of a blue LED is electrically connected with a second vertical through line via a third via hole.

A micro light-emitting device includes a support substrate, at least one micro light-emitting element, and a support structure. The support structure includes a bonding layer, an electrically conductive layer, and a protective insulation layer. The micro light-emitting element is supported by the support structure on the support substrate. The micro light-emitting element includes a light-emitting structure and first and second electrodes. First and second contact regions of the first electrode are respectively connected to a supporting post portion of the electrically conductive layer and a surrounding post portion of the protective insulation layer. A production method of the device and use of the element are also disclosed.

A micro light-emitting device includes a support substrate, at least one micro light-emitting element, and a support structure. The support structure includes a bonding layer, an electrically conductive layer, and a protective insulation layer. The micro light-emitting element is supported by the support structure on the support substrate. The micro light-emitting element includes a light-emitting structure and first and second electrodes. First and second contact regions of the first electrode are respectively connected to a supporting post portion of the electrically conductive layer and a surrounding post portion of the protective insulation layer. A production method of the device and use of the element are also disclosed.

An LED structure is formed in a nanobeam on a semiconductor base and includes three nanobeam sections. A central section is the LED and it is formed by a bottom germanium doped layer, a middle germanium-tin layer and a top germanium layer that is doped oppositely from the bottom germanium layer. Left and right germanium nanobeam sections extend outwardly from the left and right ends of the central section. Metal contacts are formed on the top and bottom layers and an electrical circuit is connected to the metal contacts and provides an electrical signal that energizes the middle section and causes it to emit light, some of which is transmitted by the left and right nanobeams. Cylindrical holes are formed in the nanobeam and are sized and spaced apart to form a zero point-defect resonator. The diameters of the holes are reduced as they move further away from the central section in accordance with a Gaussian taper. The LED is configured and dimensioned to have a maximum modulation rate from about 1.6 GHz to about 0.4 GHz. The bottom layer is configured such that the metal contact on the bottom layer is spaced away from the middle layer to thereby reduce metal damping of the LED.

An LED structure is formed in a nanobeam on a semiconductor base and includes three nanobeam sections. A central section is the LED and it is formed by a bottom germanium doped layer, a middle germanium-tin layer and a top germanium layer that is doped oppositely from the bottom germanium layer. Left and right germanium nanobeam sections extend outwardly from the left and right ends of the central section. Metal contacts are formed on the top and bottom layers and an electrical circuit is connected to the metal contacts and provides an electrical signal that energizes the middle section and causes it to emit light, some of which is transmitted by the left and right nanobeams. Cylindrical holes are formed in the nanobeam and are sized and spaced apart to form a zero point-defect resonator. The diameters of the holes are reduced as they move further away from the central section in accordance with a Gaussian taper. The LED is configured and dimensioned to have a maximum modulation rate from about 1.6 GHz to about 0.4 GHz. The bottom layer is configured such that the metal contact on the bottom layer is spaced away from the middle layer to thereby reduce metal damping of the LED.

An LED circuit board structure includes first color LEDs, second color LEDs, third color LEDs, integrated circuit chips, a carrier board, first P-type pads, first color pads, first testing wires and first connecting wires. One of the first P-type pads is disposed at a pixel-front-side-pattern region for mounting a first P-type electrode. One of the first color pads is disposed at the pixel-front-side-pattern region for mounting a first pin of the integrated circuit chip. The first color pad electrically connects to the first P-type pad. A first testing wire is disposed at the pixel-front-side-pattern region and extends from the first P-type pad or the first color pad. The first connecting wire electrically connects two first testing wires in adjacent two pixel-front-side-pattern regions in parallel.

An LED circuit board structure includes first color LEDs, second color LEDs, third color LEDs, integrated circuit chips, a carrier board, first P-type pads, first color pads, first testing wires and first connecting wires. One of the first P-type pads is disposed at a pixel-front-side-pattern region for mounting a first P-type electrode. One of the first color pads is disposed at the pixel-front-side-pattern region for mounting a first pin of the integrated circuit chip. The first color pad electrically connects to the first P-type pad. A first testing wire is disposed at the pixel-front-side-pattern region and extends from the first P-type pad or the first color pad. The first connecting wire electrically connects two first testing wires in adjacent two pixel-front-side-pattern regions in parallel.

A system and method providing correlated color temperature-tunable (CCT-tunable) white light using a laser diode(s) in conjunction with a III-Nitride nanowires-based LED element grown on a semi-transparent substrate. The tunability spans across yellow, amber, and red wavelengths and can be implemented by current injection. The current-dependent broad wavelength tunability enables control of wide range of CCT values (intensity, peak wavelength, and spectral coverage). The broad coverage in the yellow-amber-red color regime mimics that of a passive yellow phosphor, while the injection of current into the LED element defines an active phosphor element. The semi-transparent active phosphor element allows direct transmission of light from a laser diode(s) for achieving extreme wide tunability of CCT.

A system and method providing correlated color temperature-tunable (CCT-tunable) white light using a laser diode(s) in conjunction with a III-Nitride nanowires-based LED element grown on a semi-transparent substrate. The tunability spans across yellow, amber, and red wavelengths and can be implemented by current injection. The current-dependent broad wavelength tunability enables control of wide range of CCT values (intensity, peak wavelength, and spectral coverage). The broad coverage in the yellow-amber-red color regime mimics that of a passive yellow phosphor, while the injection of current into the LED element defines an active phosphor element. The semi-transparent active phosphor element allows direct transmission of light from a laser diode(s) for achieving extreme wide tunability of CCT.