A light emitting diode, a manufacturing method thereof and a display device are provided. The light emitting diode includes a first electrode, an active layer and a second electrode. The active layer is on the first electrode; the second electrode is on a side of the active layer away from the first electrode, and includes a first conductive layer and a second conductive layer sequentially arranged along a direction away from the active layer; the first conductive layer includes a plurality of micropores; and the second conductive layer includes a plurality of conductive nanoparticles.

A light emitting diode, a manufacturing method thereof and a display device are provided. The light emitting diode includes a first electrode, an active layer and a second electrode. The active layer is on the first electrode; the second electrode is on a side of the active layer away from the first electrode, and includes a first conductive layer and a second conductive layer sequentially arranged along a direction away from the active layer; the first conductive layer includes a plurality of micropores; and the second conductive layer includes a plurality of conductive nanoparticles.

A micro-LED module is disclosed. The micro-LED module includes: a micro-LED including a plurality of LED cells, each of which includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a submount substrate mounted with the micro-LED; a plurality of electrode pads formed on the micro-LED cells; a plurality of electrodes formed corresponding to the plurality of electrode pads on the submount substrate; a plurality of connection members through which the plurality of electrode pads are connected to the corresponding plurality of electrodes; and a gap fill layer formed in the gap between the micro-LED and the submount substrate and having a bonding strength to the micro-LED and the submount substrate.

A micro-LED module is disclosed. The micro-LED module includes: a micro-LED including a plurality of LED cells, each of which includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a submount substrate mounted with the micro-LED; a plurality of electrode pads formed on the micro-LED cells; a plurality of electrodes formed corresponding to the plurality of electrode pads on the submount substrate; a plurality of connection members through which the plurality of electrode pads are connected to the corresponding plurality of electrodes; and a gap fill layer formed in the gap between the micro-LED and the submount substrate and having a bonding strength to the micro-LED and the submount substrate.

An electrical contact structure including a substrate, first/second conductive pads, a light-emitting diode, a cured positive photoresist layer, and a top electrode is provided. A thickness of a second type semiconductor layer of the light-emitting diode is greater than a thickness of a first type semiconductor layer of the light-emitting diode. The cured positive photoresist layer is in contact with the light-emitting diode, which exposes a top surface of the second conductive pad through a via hole therein, and exposes a top surface of the light-emitting diode. A height of the top surface of the light-emitting diode relative to the top surface of the substrate is greater than a height of a top surface of the cured positive photoresist layer relative to the top surface of the substrate. The top electrode covers the top surface of the light-emitting diode and the second conductive pad.

An electrical contact structure including a substrate, first/second conductive pads, a light-emitting diode, a cured positive photoresist layer, and a top electrode is provided. A thickness of a second type semiconductor layer of the light-emitting diode is greater than a thickness of a first type semiconductor layer of the light-emitting diode. The cured positive photoresist layer is in contact with the light-emitting diode, which exposes a top surface of the second conductive pad through a via hole therein, and exposes a top surface of the light-emitting diode. A height of the top surface of the light-emitting diode relative to the top surface of the substrate is greater than a height of a top surface of the cured positive photoresist layer relative to the top surface of the substrate. The top electrode covers the top surface of the light-emitting diode and the second conductive pad.

A light emitting device includes a substrate, an adhesion layer, a micro light emitting device (LED), a first conductive layer, and a second conductive layer. A light emitting surface of the LED is away from the substrate. The LED includes a first semiconductive layer, a second semiconductive layer, a tether layer, a first electrode, and a second electrode. The tether layer covers a portion of sidewalls of the first semi-conductive layer, a portion of a bottom surface of the first semi-conductive layer, sidewalls of the second semiconductive layer, and a portion of a bottom surface of the second semiconductive layer. The first electrode and the second electrode are respectively electrically connected to the first semiconductive layer and the second semiconductive layer. The first conductive layer and the second conductive layer are respectively electrically connected to the first electrode and the second electrode.

A light emitting device includes a substrate, an adhesion layer, a micro light emitting device (LED), a first conductive layer, and a second conductive layer. A light emitting surface of the LED is away from the substrate. The LED includes a first semiconductive layer, a second semiconductive layer, a tether layer, a first electrode, and a second electrode. The tether layer covers a portion of sidewalls of the first semi-conductive layer, a portion of a bottom surface of the first semi-conductive layer, sidewalls of the second semiconductive layer, and a portion of a bottom surface of the second semiconductive layer. The first electrode and the second electrode are respectively electrically connected to the first semiconductive layer and the second semiconductive layer. The first conductive layer and the second conductive layer are respectively electrically connected to the first electrode and the second electrode.

The present application provides a display substrate, a method of manufacturing the same and a display panel. The display substrate includes pixel units each including a light emitting region and a transparent display region. A light emitting element including a first electrode, a light emitting functional layer and a second electrode is provided in the light emitting region, and second electrodes of light emitting elements forms a second electrode layer having an integral structure. The display substrate further includes an auxiliary electrode in the light emitting region and an auxiliary connection member made of a transparent conductive material. A portion of the auxiliary connection member is in the light emitting region and electrically coupled with the auxiliary electrode and another portion thereof is in the transparent display region and electrically coupled with the second electrode layer.

The present application provides a display substrate, a method of manufacturing the same and a display panel. The display substrate includes pixel units each including a light emitting region and a transparent display region. A light emitting element including a first electrode, a light emitting functional layer and a second electrode is provided in the light emitting region, and second electrodes of light emitting elements forms a second electrode layer having an integral structure. The display substrate further includes an auxiliary electrode in the light emitting region and an auxiliary connection member made of a transparent conductive material. A portion of the auxiliary connection member is in the light emitting region and electrically coupled with the auxiliary electrode and another portion thereof is in the transparent display region and electrically coupled with the second electrode layer.