Disclosed is a semiconductor light emitting device comprising: a substrate; a first semiconductor layer, which is provided on the substrate and has a first conductivity; an active layer, which is provided on the first semiconductor layer and generates ultraviolet light by electron-hole recombination; a second semiconductor layer, which is provided on the active layer and has a second conductivity different from the first conductivity; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a second region that includes a plurality of protruded parts of the active layer and the second semiconductor layer protruded from the first semiconductor layer as seen in cross-sectional view and recesses between the protruded parts; and a first region surrounding the second region.

A light-emitting device is provided, including a light-emitting unit and an optical layer. The light-emitting unit includes a light-emitting chip and an encapsulation disposed thereon. The optical layer is disposed on the light-emitting unit, the optical layer having a first region overlapping the light-emitting chip in a top view direction of the light-emitting device and a second region not overlapping the light-emitting chip in the top view direction of the light-emitting device, wherein the transmittance of the first region is less than the transmittance of the second region.

A light-emitting device is provided, including a light-emitting unit and an optical layer. The light-emitting unit includes a light-emitting chip and an encapsulation disposed thereon. The optical layer is disposed on the light-emitting unit, the optical layer having a first region overlapping the light-emitting chip in a top view direction of the light-emitting device and a second region not overlapping the light-emitting chip in the top view direction of the light-emitting device, wherein the transmittance of the first region is less than the transmittance of the second region.

Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

A display device includes a substrate, a first electrode on the substrate, a light emitting element including: a first contact electrode connected to the first electrode, a first semiconductor layer on the first contact electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second contact electrode on the second semiconductor layer, a second electrode on the light emitting element, and a color conversion layer on the light emitting element and the second electrode, wherein an upper surface of the second contact electrode has a concavo-convex pattern.

A display device includes a substrate, a first electrode on the substrate, a light emitting element including: a first contact electrode connected to the first electrode, a first semiconductor layer on the first contact electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second contact electrode on the second semiconductor layer, a second electrode on the light emitting element, and a color conversion layer on the light emitting element and the second electrode, wherein an upper surface of the second contact electrode has a concavo-convex pattern.

A light emitting diode package includes an upper housing and a lower housing. The upper housing includes a first light emitting diode (LED) chip arranged therein, a second LED chip arranged to be spaced apart from the first LED chip in a first direction, two light discharge structures, first electrodes formed on a lower surface of the first LED chip, and second electrodes formed on a lower surface of the second LED chip. The lower housing includes at least three grooves at a lower surface thereof. The lower housing further includes three or more pads. The first pair of via-holes are arranged to connect the first electrodes to one or more of the pads in a second direction perpendicular to the first direction. The second pair of via-holes are arranged to connect the second electrodes to one or more of the pads in the second direction.

A light emitting diode package includes an upper housing and a lower housing. The upper housing includes a first light emitting diode (LED) chip arranged therein, a second LED chip arranged to be spaced apart from the first LED chip in a first direction, two light discharge structures, first electrodes formed on a lower surface of the first LED chip, and second electrodes formed on a lower surface of the second LED chip. The lower housing includes at least three grooves at a lower surface thereof. The lower housing further includes three or more pads. The first pair of via-holes are arranged to connect the first electrodes to one or more of the pads in a second direction perpendicular to the first direction. The second pair of via-holes are arranged to connect the second electrodes to one or more of the pads in the second direction.

An embodiment relates to an ultraviolet light-emitting diode, a method for manufacturing a light-emitting diode, a light-emitting diode package, and a lighting system. The light-emitting diode according to an embodiment includes: a second electrode layer (120); a second conductive type AlGaN-based semiconductor layer (119) on the second electrode layer (120); an active layer (117) on the second conductive type AlGaN-based semiconductor layer (119); a current spreading layer (115) including a first conductive type Al.sub.xGa.sub.1-xN layer (0<x0.25) (115c) and disposed on the active layer (117); and a first conductive type AlGaN-based semiconductor layer (114) disposed on the current spreading layer (115). A composition x of Al in the first conductive type Al.sub.xGa.sub.1-xN layer (0<x0.25) (115c) may be reduced in a direction of the active layer (117) from the first conductive type first AlGaN-based semiconductor layer (114).

An embodiment relates to an ultraviolet light-emitting diode, a method for manufacturing a light-emitting diode, a light-emitting diode package, and a lighting system. The light-emitting diode according to an embodiment includes: a second electrode layer (120); a second conductive type AlGaN-based semiconductor layer (119) on the second electrode layer (120); an active layer (117) on the second conductive type AlGaN-based semiconductor layer (119); a current spreading layer (115) including a first conductive type Al.sub.xGa.sub.1-xN layer (0<x0.25) (115c) and disposed on the active layer (117); and a first conductive type AlGaN-based semiconductor layer (114) disposed on the current spreading layer (115). A composition x of Al in the first conductive type Al.sub.xGa.sub.1-xN layer (0<x0.25) (115c) may be reduced in a direction of the active layer (117) from the first conductive type first AlGaN-based semiconductor layer (114).