The method for manufacturing the heterojunction circuit according to one embodiment of the present disclosure comprises depositing a first electrode on at least a part of a waveguide, moving a semiconductor comprising a second electrode at a lower end thereof onto the first electrode, and depositing a third electrode on an upper end of the semiconductor, wherein the waveguide and the semiconductor comprise different materials. Additionally, the moving step further comprises generating microbubbles by supplying heat to at least a part of the semiconductor, moving the semiconductor on the first electrode by moving the generated microbubbles, and removing the microbubbles by positioning the semiconductor on the first electrode.

A light string includes an illumination device, a first wire, a second wire, soldering material, and transparent adhesive. The illumination device includes two soldering portions. The conductors of the first wire and the second wire are partially exposed to form a first soldering section and a second soldering section. Soldering material is used to attach the first soldering section and the second soldering section to the two soldering portions. The transparent adhesive forms a layer over, and covers, the illumination device, the first soldering section and the second soldering section, and extends to partially cover other portions of the first wire and the second wire.

A light string includes an illumination device, a first wire, a second wire, soldering material, and transparent adhesive. The illumination device includes two soldering portions. The conductors of the first wire and the second wire are partially exposed to form a first soldering section and a second soldering section. Soldering material is used to attach the first soldering section and the second soldering section to the two soldering portions. The transparent adhesive forms a layer over, and covers, the illumination device, the first soldering section and the second soldering section, and extends to partially cover other portions of the first wire and the second wire.

A light emitting device includes a resin package including: a first lead and a second lead, each including a top surface and a bottom surface, and a first resin portion located between the first lead and the second lead and extending in a first direction; a first light emitting element and a second light emitting element arrayed on the top surface of the first lead in the first direction, the first light emitting element and the second light emitting element each including at least a first side surface; and an encapsulant located on the top surface of the first lead and covering the first light emitting element and the second light emitting element. The first side surface of the first light emitting element and the first side surface of the second light emitting element partially face each other.

A light emitting device includes a resin package including: a first lead and a second lead, each including a top surface and a bottom surface, and a first resin portion located between the first lead and the second lead and extending in a first direction; a first light emitting element and a second light emitting element arrayed on the top surface of the first lead in the first direction, the first light emitting element and the second light emitting element each including at least a first side surface; and an encapsulant located on the top surface of the first lead and covering the first light emitting element and the second light emitting element. The first side surface of the first light emitting element and the first side surface of the second light emitting element partially face each other.

A display device is disclosed. The display device includes a light-transmitting substrate having one surface, a pad formed on the one surface, and an electrode layer formed on the one surface, electrically connected to the pad, and having a mesh shape. The electrode layer includes a first region adjacent to the pad and spaced apart from the pad, and a second region connecting the pad to the first region. A density of the mesh shape of the second region is higher than a density of the mesh shape of the first region.

A display device is disclosed. The display device includes a light-transmitting substrate having one surface, a pad formed on the one surface, and an electrode layer formed on the one surface, electrically connected to the pad, and having a mesh shape. The electrode layer includes a first region adjacent to the pad and spaced apart from the pad, and a second region connecting the pad to the first region. A density of the mesh shape of the second region is higher than a density of the mesh shape of the first region.

A semiconductor device includes a semiconductor layered structure, an electrode unit, and an anti-adsorption layer. The electrode unit is disposed on an electrode connecting region of the semiconductor layered structure. The anti-adsorption layer is disposed on a top surface of the electrode unit opposite to the semiconductor layered structure and is electrically connected to the electrode unit. The anti-adsorption layer has an adsorption capacity for at least one of gaseous contaminants and particulate contaminants which is lower than that of the electrode unit. Also disclosed herein is a light-emitting system including the semiconductor device.

The present application provides a display substrate, a method of manufacturing the same and a display panel. The display substrate includes pixel units each including a light emitting region and a transparent display region. A light emitting element including a first electrode, a light emitting functional layer and a second electrode is provided in the light emitting region, and second electrodes of light emitting elements forms a second electrode layer having an integral structure. The display substrate further includes an auxiliary electrode in the light emitting region and an auxiliary connection member made of a transparent conductive material. A portion of the auxiliary connection member is in the light emitting region and electrically coupled with the auxiliary electrode and another portion thereof is in the transparent display region and electrically coupled with the second electrode layer.

A light emitting device, such as an LED, is formed by forming a plurality of semiconductor nanostructures having a doping of a first conductivity type through, and over, a growth mask layer overlying a doped compound semiconductor layer. Each of the plurality of semiconductor nanostructures includes a nanofrustum including a bottom surface, a top surface, tapered planar sidewalls, and a height that is less than a maximum lateral dimension of the top surface, and a pillar portion contacting the bottom surface of the nanofrustum and located within a respective one of the openings through the growth mask layer. A plurality of active regions on the nanofrustums. A second conductivity type semiconductor material layer is formed on each of the plurality of active regions.