This disclosure discloses a display including a first carrier, a second carrier, a light-emitting unit, a frame, and a protective layer. The first carrier includes a first electrode and a second electrode. The second carrier is arranged below the first carrier and includes a first connection pad and a second connection pad arranged on a side of the second carrier close to the first carrier. The light-emitting unit is arranged on the first carrier. The frame surrounds the light-emitting unit, and the protective layer covers the light-emitting unit. A distance between the first electrode and the second electrode is smaller than that between the first connection pad and the second connection pad.

In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

A light string includes an illumination device, a first wire, a second wire, soldering material, and transparent adhesive. The illumination device includes two soldering portions. The conductors of the first wire and the second wire are partially exposed to form a first soldering section and a second soldering section. Soldering material is used to attach the first soldering section and the second soldering section to the two soldering portions. The transparent adhesive forms a layer over, and covers, the illumination device, the first soldering section and the second soldering section, and extends to partially cover other portions of the first wire and the second wire.

A light string includes an illumination device, a first wire, a second wire, soldering material, and transparent adhesive. The illumination device includes two soldering portions. The conductors of the first wire and the second wire are partially exposed to form a first soldering section and a second soldering section. Soldering material is used to attach the first soldering section and the second soldering section to the two soldering portions. The transparent adhesive forms a layer over, and covers, the illumination device, the first soldering section and the second soldering section, and extends to partially cover other portions of the first wire and the second wire.

A micro light-emitting diode is provided. The micro light-emitting diode includes a first type semiconductor layer and a second type semiconductor layer. The first type semiconductor layer includes at least one low resistance portion and a diffuse type high resistance portion. The low resistance portion extends between and reaches a first surface and a second surface of the first type semiconductor layer. The diffuse type high resistance portion extends between and reaches the first surface and the second surface. A thickness of the first type semiconductor layer is less than half of a lateral length of the low resistance portion on the first surface. The low resistance portion and the diffuse type high resistance portion form an interface therebetween on the first surface. A concentration of a guest material starts decreasing from the interface toward the low resistance portion.

A micro light-emitting diode is provided. The micro light-emitting diode includes a first type semiconductor layer and a second type semiconductor layer. The first type semiconductor layer includes at least one low resistance portion and a diffuse type high resistance portion. The low resistance portion extends between and reaches a first surface and a second surface of the first type semiconductor layer. The diffuse type high resistance portion extends between and reaches the first surface and the second surface. A thickness of the first type semiconductor layer is less than half of a lateral length of the low resistance portion on the first surface. The low resistance portion and the diffuse type high resistance portion form an interface therebetween on the first surface. A concentration of a guest material starts decreasing from the interface toward the low resistance portion.

The invention relates to a method of manufacturing at least one optoelectronic structure on a support substrate.

In particular, this invention relates to manufacturing of an optoelectronic structure that has a plurality of coplanar light emitting diodes, and formed from a succession of light emitting stacks.

Therefore this invention uses a cavity, the bottom of which has a staged profile, such that the formation of the succession of light emitting stacks reproduces the staged profile of the bottom of the cavity, on its exposed face.

Performance of a step to level the succession of light emitting stacks relative to a reference level defined by the exposed surface portion vertically in line with the deepest step, then makes it possible to reveal a set of coplanar light emitting diodes.

The invention relates to a method of manufacturing at least one optoelectronic structure on a support substrate.

In particular, this invention relates to manufacturing of an optoelectronic structure that has a plurality of coplanar light emitting diodes, and formed from a succession of light emitting stacks.

Therefore this invention uses a cavity, the bottom of which has a staged profile, such that the formation of the succession of light emitting stacks reproduces the staged profile of the bottom of the cavity, on its exposed face.

Performance of a step to level the succession of light emitting stacks relative to a reference level defined by the exposed surface portion vertically in line with the deepest step, then makes it possible to reveal a set of coplanar light emitting diodes.

Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part.