A nitride semiconductor light emitting element includes: an n-side layer; a p-side layer; an active layer disposed between the n-side layer and the p-side layer, the active layer comprising: a well layer containing Al, Ga, and N, and a barrier layer containing Al, Ga, and N, wherein an Al content of the barrier layer is higher than an Al content of the well layer; and an electron blocking structure layer between the active layer and the p-side layer, the electron blocking structure comprising: a first electron blocking layer disposed between the p-side layer and the active layer, a second electron blocking layer disposed between the p-side layer and the first electron blocking layer, and an intermediate layer disposed between the first electron blocking layer and the second electron blocking layer.

A nitride semiconductor light emitting element includes: an n-side layer; a p-side layer; an active layer disposed between the n-side layer and the p-side layer, the active layer comprising: a well layer containing Al, Ga, and N, and a barrier layer containing Al, Ga, and N, wherein an Al content of the barrier layer is higher than an Al content of the well layer; and an electron blocking structure layer between the active layer and the p-side layer, the electron blocking structure comprising: a first electron blocking layer disposed between the p-side layer and the active layer, a second electron blocking layer disposed between the p-side layer and the first electron blocking layer, and an intermediate layer disposed between the first electron blocking layer and the second electron blocking layer.

Embodiments relate to functional test methods useful for fabricating products containing Light Emitting Diode (LED) structures. In particular, LED arrays are functionally tested by injecting current via a displacement current coupling device using a field plate comprising of an electrode and insulator placed in close proximity to the LED array. A controlled voltage waveform is then applied to the field plate electrode to excite the LED devices in parallel for high-throughput. A camera records the individual light emission resulting from the electrical excitation to yield a function test of a plurality of LED devices. Changing the voltage conditions can excite the LEDs at differing current density levels to functionally measure external quantum efficiency and other important device functional parameters.

Embodiments relate to functional test methods useful for fabricating products containing Light Emitting Diode (LED) structures. In particular, LED arrays are functionally tested by injecting current via a displacement current coupling device using a field plate comprising of an electrode and insulator placed in close proximity to the LED array. A controlled voltage waveform is then applied to the field plate electrode to excite the LED devices in parallel for high-throughput. A camera records the individual light emission resulting from the electrical excitation to yield a function test of a plurality of LED devices. Changing the voltage conditions can excite the LEDs at differing current density levels to functionally measure external quantum efficiency and other important device functional parameters.

The invention relates to an optoelectronic component (100) comprising a semiconductor layer sequence (1) having an active layer (10), wherein the active layer (10) is designed to produce or absorb electromagnetic radiation in intended operation. Furthermore, the component (100) comprises a first contact structure (11) and a second structure (12), by means of which the semiconductor layer sequence (1) can be electrically contacted in intended operation. In operation, a voltage is applied to the contact structures (11, 12), wherein an operation-related voltage difference Ubet between the contact structures (11, 12) arises. When the voltage difference is increased, a first arc-over occurs in or on the component (100) between the two contact structures (11, 12). A spark gap (3) between the contact structures (11, 12), which arises in the event of the first arc-over, passes predominantly through a surrounding medium in the form of gas or vacuum and/or through a potting. The first arc-over occurs at a voltage difference of 2.Math.Ubet at the earliest.

The invention relates to an optoelectronic component (100) comprising a semiconductor layer sequence (1) having an active layer (10), wherein the active layer (10) is designed to produce or absorb electromagnetic radiation in intended operation. Furthermore, the component (100) comprises a first contact structure (11) and a second structure (12), by means of which the semiconductor layer sequence (1) can be electrically contacted in intended operation. In operation, a voltage is applied to the contact structures (11, 12), wherein an operation-related voltage difference Ubet between the contact structures (11, 12) arises. When the voltage difference is increased, a first arc-over occurs in or on the component (100) between the two contact structures (11, 12). A spark gap (3) between the contact structures (11, 12), which arises in the event of the first arc-over, passes predominantly through a surrounding medium in the form of gas or vacuum and/or through a potting. The first arc-over occurs at a voltage difference of 2.Math.Ubet at the earliest.

The present disclosure provides a light-emitting device comprises a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first light-emitting layer separated from the topmost surface by a first distance; a second semiconductor stack arranged on the substrate, and comprising a second light-emitting layer separated from the topmost surface by a second distance; and a third semiconductor stack arranged on the substrate, and comprising third light-emitting layer separated from the topmost surface by a third distance; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights; and wherein the second distance is different form the first distance and the third distance.

The present disclosure provides an LED package structure and a method for manufacturing the LED package structure. The LED package structure includes: a chip scale package (CSP) light emitting element and a shading layer, where the CSP light emitting element includes a light emitting chip, and the light emitting chip includes an electrode group located on a bottom surface of the light emitting chip, the shading layer is disposed on a bottom surface and/or a side surface of the CSP light emitting element. An LED package structure according to the present disclosure solves a problem that the blue light leaking from the bottom surface of the LED chip interferes with the emission color of the CSP emitting device, and reduces the luminous efficiency of the emitting device.

The present disclosure provides an LED package structure and a method for manufacturing the LED package structure. The LED package structure includes: a chip scale package (CSP) light emitting element and a shading layer, where the CSP light emitting element includes a light emitting chip, and the light emitting chip includes an electrode group located on a bottom surface of the light emitting chip, the shading layer is disposed on a bottom surface and/or a side surface of the CSP light emitting element. An LED package structure according to the present disclosure solves a problem that the blue light leaking from the bottom surface of the LED chip interferes with the emission color of the CSP emitting device, and reduces the luminous efficiency of the emitting device.

A micro light-emitting diode display device including a driving transistor and a micro light-emitting diode is provided. The driving transistor includes a substrate, a gate, a gate insulator, a semiconductor layer, a drain electrode, and a source electrode. The gate insulator has a thickness less than or equal to about 500 angstroms. The micro light-emitting diode has a lateral length less than or equal to about 50 m and is electrically connected to one of the source electrode and the drain electrode. A current injection channel is extended within one of a first type semiconductor layer and a second type semiconductor layer of the micro light-emitting diode and is spaced apart from a side surface of the micro light-emitting diode. A lateral length a light-emitting portion of an active layer of the micro light-emitting diode is less than or equal to about 10 m.