A quantum dot display device includes a substrate, a quantum dot diode disposed on the substrate and including a first electrode, a second electrode, and a quantum dot layer between the first electrode and the second electrode, and an encapsulation film disposed on a surface of the quantum dot diode, wherein a water vapor transmission rate of the encapsulation film is about 0.001 to about 1 gram per square meter per day at 1 atmosphere of pressure.

A quantum dot display device includes a substrate, a quantum dot diode disposed on the substrate and including a first electrode, a second electrode, and a quantum dot layer between the first electrode and the second electrode, and an encapsulation film disposed on a surface of the quantum dot diode, wherein a water vapor transmission rate of the encapsulation film is about 0.001 to about 1 gram per square meter per day at 1 atmosphere of pressure.

A display apparatus can include a first transistor disposed on a substrate, the first transistor including a first active layer made of low temperature polycrystalline silicon (LTPS); a circuit insulating layer disposed on the first transistor; a second transistor disposed on the circuit insulating layer, the second transistor including a second active layer made of an oxide semiconductor; a driving transistor disposed on the circuit insulating layer, the driving transistor having a back channel etch structure (BCE) and an active layer made of the oxide semiconductor; and a light emitting diode electrically connected to the driving transistor, in which the circuit insulating layer is disposed between the first transistor and the driving and second transistors.

A display apparatus can include a first transistor disposed on a substrate, the first transistor including a first active layer made of low temperature polycrystalline silicon (LTPS); a circuit insulating layer disposed on the first transistor; a second transistor disposed on the circuit insulating layer, the second transistor including a second active layer made of an oxide semiconductor; a driving transistor disposed on the circuit insulating layer, the driving transistor having a back channel etch structure (BCE) and an active layer made of the oxide semiconductor; and a light emitting diode electrically connected to the driving transistor, in which the circuit insulating layer is disposed between the first transistor and the driving and second transistors.

A DOE module including a transparent substrate, a first electrode, a second electrode, a first sensing wire, a sensing layer, a DOE layer, and an insulating layer is provided. The first electrode is disposed on the transparent substrate, and the second electrode is disposed on the transparent substrate. The first sensing wire is distributed on the transparent substrate and electrically connected to the first electrode. The sensing layer is distributed on the transparent substrate and electrically connected to the second electrode. The first sensing wire is insulated from the sensing layer to form a capacitance between the first sensing wire and the sensing layer. The DOE layer is disposed on the transparent substrate. The insulating layer covers the first sensing wire and the sensing layer. The insulating layer has a first opening and a second opening respectively exposing the first electrode and the second electrode.

A DOE module including a transparent substrate, a first electrode, a second electrode, a first sensing wire, a sensing layer, a DOE layer, and an insulating layer is provided. The first electrode is disposed on the transparent substrate, and the second electrode is disposed on the transparent substrate. The first sensing wire is distributed on the transparent substrate and electrically connected to the first electrode. The sensing layer is distributed on the transparent substrate and electrically connected to the second electrode. The first sensing wire is insulated from the sensing layer to form a capacitance between the first sensing wire and the sensing layer. The DOE layer is disposed on the transparent substrate. The insulating layer covers the first sensing wire and the sensing layer. The insulating layer has a first opening and a second opening respectively exposing the first electrode and the second electrode.

A semiconductor light-emitting device comprises: an insulating base, a current diffusion layer, light-emitting structure layers and an insulating layer. The current diffusion layer includes: a first electrode connecting part, a second electrode connecting part, N contact parts and N+1 flat parts. N+1 light-emitting structure layers are correspondingly disposed on the N+1 flat parts, and each of the N+1 light-emitting structure layers includes: a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked on a corresponding flat part. N grooves are formed on a side of the second semiconductor layer away from the active layer, depth of the N grooves is less than the thickness of the second semiconductor layer, and the N contact parts correspond to the N grooves.

Magnetic regions of at least one of a chiplet or a receiving substrate are used to permit magnetically guided precision placement of a plurality of chiplets on the receiving substrate. In the present application, a solution containing dispersed chiplets is employed to facilitate the placement of the dispersed chiplets on bond pads that are present on a receiving substrate.

Disclosed is a method for fabricating an LED module. The method includes: constructing a chip-on-carrier including a chip retainer having a horizontal bonding plane and a plurality of LED chips in which electrode pads are bonded to the bonding plane of the chip retainer; and transferring the plurality of LED chips in a predetermined arrangement from the chip retainer to a substrate by transfer printing. The transfer printing includes: primarily section-wise exposing a transfer tape to reduce the adhesive strength of the transfer tape such that bonding areas are formed at predetermined intervals on the transfer tape; and pressurizing the transfer tape against the LED chips on the chip retainer to attach the LED chips to the corresponding bonding areas of the transfer tape and detaching the electrode pads of the LED chips from the chip retainer to pick up the chips.

Disclosed is a method for fabricating an LED module. The method includes: constructing a chip-on-carrier including a chip retainer having a horizontal bonding plane and a plurality of LED chips in which electrode pads are bonded to the bonding plane of the chip retainer; and transferring the plurality of LED chips in a predetermined arrangement from the chip retainer to a substrate by transfer printing. The transfer printing includes: primarily section-wise exposing a transfer tape to reduce the adhesive strength of the transfer tape such that bonding areas are formed at predetermined intervals on the transfer tape; and pressurizing the transfer tape against the LED chips on the chip retainer to attach the LED chips to the corresponding bonding areas of the transfer tape and detaching the electrode pads of the LED chips from the chip retainer to pick up the chips.