The present invention relates to a vehicle lamp using a semiconductor light emitting device, and the vehicle lamp includes a light source unit to emit light. The light source unit includes a substrate having a reflective film, a semiconductor light emitting device coupled to the substrate, an insulating layer stacked on the reflective film to surround the semiconductor light emitting device, a first electrode and a second electrode disposed on an upper surface of the insulating layer, and light-transmitting connection electrodes extending from the first and second electrodes, respectively, electrically connected to the semiconductor light-emitting device, and covering an upper surface of the semiconductor light-emitting device.

The present invention relates to a vehicle lamp using a semiconductor light emitting device, and the vehicle lamp includes a light source unit to emit light. The light source unit includes a substrate having a reflective film, a semiconductor light emitting device coupled to the substrate, an insulating layer stacked on the reflective film to surround the semiconductor light emitting device, a first electrode and a second electrode disposed on an upper surface of the insulating layer, and light-transmitting connection electrodes extending from the first and second electrodes, respectively, electrically connected to the semiconductor light-emitting device, and covering an upper surface of the semiconductor light-emitting device.

Embodiments described herein comprise micro light emitting diodes (LEDs) and methods of forming such micro LEDs. In an embodiment, a nanowire LED comprises a nanowire core that includes GaN, an active layer shell around the nanowire core, where the active layer shell includes InGaN, a cladding layer shell around the active layer shell, where the cladding layer comprises p-type GaN, a conductive layer over the cladding layer, and a spacer surrounding the conductive layer. In an embodiment, a refractive index of the spacer is less than a refractive index of the cladding layer shell.

Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.

Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

Described is an arrangement and system for precise angular and directional positioning of light-emitting diodes (LED). An LED component includes a base body with a light-emitting region, a first connector, and a second connector, where the connectors are electrically conductively connected to the light-emitting region. The base body includes at least two fixing regions and the connectors each include a bending portion and a contact area for surface mounting. Each of the bending portions is arranged between the base body and the contact area. A supporting frame includes a plinth region to align the supporting frame on a surface and includes an outwardly open recess, a support region to receive a component in the supporting frame and at least two fixing elements to fix the component above the support region. A base area of the plinth region and a base area of the support region enclose an acute angle.

Described is an arrangement and system for precise angular and directional positioning of light-emitting diodes (LED). An LED component includes a base body with a light-emitting region, a first connector, and a second connector, where the connectors are electrically conductively connected to the light-emitting region. The base body includes at least two fixing regions and the connectors each include a bending portion and a contact area for surface mounting. Each of the bending portions is arranged between the base body and the contact area. A supporting frame includes a plinth region to align the supporting frame on a surface and includes an outwardly open recess, a support region to receive a component in the supporting frame and at least two fixing elements to fix the component above the support region. A base area of the plinth region and a base area of the support region enclose an acute angle.

In order to be more compact and thin, this light emitting device includes LED elements embedded in a resin molded body such that light emitting units are exposed on a lateral surface of the resin molded body and positive electrodes and negative electrodes are exposed on a back surface which is perpendicular to the lateral surface of the resin molded body.

In order to be more compact and thin, this light emitting device includes LED elements embedded in a resin molded body such that light emitting units are exposed on a lateral surface of the resin molded body and positive electrodes and negative electrodes are exposed on a back surface which is perpendicular to the lateral surface of the resin molded body.