A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.

A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.

Embodiments described herein provide techniques for testing a semiconductor package by using a diode to couple a test pad to a contact pad. In one scenario, a package comprises a die stack comprising one or more dies and a molding compound encapsulating the die stack. In this package, a substrate is over the molding compound. Also, a test pad and a contact pad are on a surface of the substrate. The contact pad is coupled to the die stack. A diode couples the test pad to the contact pad. In one example, the test pad is coupled to a P side of the diode's P-N junction and the contact pad is coupled to an N side of the diode's P-N junction. In operation, current can flow from the test pad through the contact pad (and the die stack), but current cannot flow from the contact pad through the test pad.

Embodiments described herein provide techniques for testing a semiconductor package by using a diode to couple a test pad to a contact pad. In one scenario, a package comprises a die stack comprising one or more dies and a molding compound encapsulating the die stack. In this package, a substrate is over the molding compound. Also, a test pad and a contact pad are on a surface of the substrate. The contact pad is coupled to the die stack. A diode couples the test pad to the contact pad. In one example, the test pad is coupled to a P side of the diode's P-N junction and the contact pad is coupled to an N side of the diode's P-N junction. In operation, current can flow from the test pad through the contact pad (and the die stack), but current cannot flow from the contact pad through the test pad.

A flexible device includes: (1) a flexible substrate; and (2) an interconnect disposed over the flexible substrate, wherein the interconnect has a varying vertical displacement along its length, relative to a top surface of the flexible substrate.

A flexible device includes: (1) a flexible substrate; and (2) an interconnect disposed over the flexible substrate, wherein the interconnect has a varying vertical displacement along its length, relative to a top surface of the flexible substrate.

A method includes forming a first through-via from a first conductive pad of a first device die, and forming a second through-via from a second conductive pad of a second device die. The first and second conductive pads are at top surfaces of the first and the second device dies, respectively. The first and the second conductive pads may be used as seed layers. The second device die is adhered to the top surface of the first device die. The method further includes encapsulating the first and the second device dies and the first and the second through-vias in an encapsulating material, with the first and the second device dies and the first and the second through-vias encapsulated in a same encapsulating process. The encapsulating material is planarized to reveal the first and the second through-vias. Redistribution lines are formed to electrically couple to the first and the second through-vias.

A method includes forming a first through-via from a first conductive pad of a first device die, and forming a second through-via from a second conductive pad of a second device die. The first and second conductive pads are at top surfaces of the first and the second device dies, respectively. The first and the second conductive pads may be used as seed layers. The second device die is adhered to the top surface of the first device die. The method further includes encapsulating the first and the second device dies and the first and the second through-vias in an encapsulating material, with the first and the second device dies and the first and the second through-vias encapsulated in a same encapsulating process. The encapsulating material is planarized to reveal the first and the second through-vias. Redistribution lines are formed to electrically couple to the first and the second through-vias.

A semiconductor device and methods of forming are provided. The device includes a second die bonded to a first die and a third die bonded to the first die. An isolation material extends along sidewalls of the second die and the third die. A through via extends from the first die into the isolation material. A first passive device disposed in the isolation material, the first passive device being electrically connected to the first die.

A semiconductor device and methods of forming are provided. The device includes a second die bonded to a first die and a third die bonded to the first die. An isolation material extends along sidewalls of the second die and the third die. A through via extends from the first die into the isolation material. A first passive device disposed in the isolation material, the first passive device being electrically connected to the first die.