Patent classifications
H01L2924/012
Multi-Strike Process for Bonding
A method includes performing a first strike process to strike a metal bump of a first package component against a metal pad of a second package component. A first one of the metal bump and the metal pad includes copper. A second one of the metal bump and the metal pad includes aluminum. The method further includes performing a second strike process to strike the metal bump against the metal pad. An annealing is performed to bond the metal bump on the metal pad.
Multi-strike process for bonding
A method includes performing a first strike process to strike a metal bump of a first package component against a metal pad of a second package component. A first one of the metal bump and the metal pad includes copper. A second one of the metal bump and the metal pad includes aluminum. The method further includes performing a second strike process to strike the metal bump against the metal pad. An annealing is performed to bond the metal bump on the metal pad.
Multi-strike process for bonding
A method includes performing a first strike process to strike a metal bump of a first package component against a metal pad of a second package component. A first one of the metal bump and the metal pad includes copper. A second one of the metal bump and the metal pad includes aluminum. The method further includes performing a second strike process to strike the metal bump against the metal pad. An annealing is performed to bond the metal bump on the metal pad.
Semiconductor devices having through electrodes, methods of fabricating the same, electronic systems including the same, and memory cards including same
A semiconductor device includes a chip body having an uneven surface including at least two regions at different levels from one another, a through electrode penetrating the chip body and having an end which is exposed by the uneven surface of the chip body, a passivation layer disposed on the uneven surface of the chip body, and a bump disposed on the passivation layer and the exposed end of the through electrode and overlapping with the uneven surface of the chip body.
Semiconductor devices having through electrodes, methods of fabricating the same, electronic systems including the same, and memory cards including same
A semiconductor device includes a chip body having an uneven surface including at least two regions at different levels from one another, a through electrode penetrating the chip body and having an end which is exposed by the uneven surface of the chip body, a passivation layer disposed on the uneven surface of the chip body, and a bump disposed on the passivation layer and the exposed end of the through electrode and overlapping with the uneven surface of the chip body.