A method of forming a microelectronic device comprises forming a microelectronic device structure comprising a base structure, a doped semiconductive material overlying the base structure, a stack structure overlying the doped semiconductive material, cell pillar structures vertically extending through the stack structure and the doped semiconductive material and into the base structure, and digit line structures vertically overlying the stack structure. An additional microelectronic device structure comprising control logic devices is formed. The microelectronic device structure is attached to the additional microelectronic device structure to form a microelectronic device structure assembly. The base structure and portions of the cell pillar structures vertically extending into the base structure to are removed to expose the doped semiconductive material. The doped semiconductive material is then patterned to form at least one source structure over the stack structure and coupled to the cell pillar structures. Microelectronic devices and electronic systems are also described.

A method of forming a microelectronic device comprises forming a microelectronic device structure comprising a base structure, a doped semiconductive material overlying the base structure, a stack structure overlying the doped semiconductive material, cell pillar structures vertically extending through the stack structure and the doped semiconductive material and into the base structure, and digit line structures vertically overlying the stack structure. An additional microelectronic device structure comprising control logic devices is formed. The microelectronic device structure is attached to the additional microelectronic device structure to form a microelectronic device structure assembly. The base structure and portions of the cell pillar structures vertically extending into the base structure to are removed to expose the doped semiconductive material. The doped semiconductive material is then patterned to form at least one source structure over the stack structure and coupled to the cell pillar structures. Microelectronic devices and electronic systems are also described.

The present disclosure relates to the field of fabricating microelectronic packages, wherein magnetic particles distributed within a solder paste may be used to form a magnetic intermetallic compound interconnect. The intermetallic compound interconnect may be exposed to a magnetic field, which can heat a solder material to a reflow temperature for attachment of microelectronic components comprising the microelectronic packages.

The present disclosure relates to the field of fabricating microelectronic packages, wherein magnetic particles distributed within a solder paste may be used to form a magnetic intermetallic compound interconnect. The intermetallic compound interconnect may be exposed to a magnetic field, which can heat a solder material to a reflow temperature for attachment of microelectronic components comprising the microelectronic packages.

An anisotropic conductive film includes, as conductive particles for anisotropic conductive connection, metal particles such as solder particles having on the surface an oxide film. In this anisotropic conductive film, the metal particles are contained in an insulating film and regularly arranged as viewed in a plan view. A flux is disposed to be in contact with, or in proximity to, at least one of ends of the metal particles on a front surface side of the anisotropic conductive film and a rear surface side of the anisotropic conductive film. Preferable metal particles are solder particles. Preferably, the insulating film has a structure of two layers, and the metal particles are disposed between the two layers.

An anisotropic conductive film includes, as conductive particles for anisotropic conductive connection, metal particles such as solder particles having on the surface an oxide film. In this anisotropic conductive film, the metal particles are contained in an insulating film and regularly arranged as viewed in a plan view. A flux is disposed to be in contact with, or in proximity to, at least one of ends of the metal particles on a front surface side of the anisotropic conductive film and a rear surface side of the anisotropic conductive film. Preferable metal particles are solder particles. Preferably, the insulating film has a structure of two layers, and the metal particles are disposed between the two layers.

In an embodiment, a device includes: an interposer; a first integrated circuit device bonded to the interposer with dielectric-to-dielectric bonds and with metal-to-metal bonds; a second integrated circuit device bonded to the interposer with dielectric-to-dielectric bonds and with metal-to-metal bonds; a buffer layer around the first integrated circuit device and the second integrated circuit device, the buffer layer including a stress reduction material having a first Young's modulus; and an encapsulant around the buffer layer, the first integrated circuit device, and the second integrated circuit device, the encapsulant including a molding material having a second Young's modulus, the first Young's modulus less than the second Young's modulus.

In an embodiment, a device includes: an interposer; a first integrated circuit device bonded to the interposer with dielectric-to-dielectric bonds and with metal-to-metal bonds; a second integrated circuit device bonded to the interposer with dielectric-to-dielectric bonds and with metal-to-metal bonds; a buffer layer around the first integrated circuit device and the second integrated circuit device, the buffer layer including a stress reduction material having a first Young's modulus; and an encapsulant around the buffer layer, the first integrated circuit device, and the second integrated circuit device, the encapsulant including a molding material having a second Young's modulus, the first Young's modulus less than the second Young's modulus.

In described examples, a microelectronic device includes a microelectronic die with a die attach surface. The microelectronic device further includes a nanoparticle layer coupled to the die attach surface. The nanoparticle layer may be in direct contact with the die attach surface, or may be coupled to the die attach surface through an intermediate layer, such as an adhesion layer or a contact metal layer. The nanoparticle layer includes nanoparticles having adjacent nanoparticles adhered to each other. The microelectronic die is attached to a package substrate by a die attach material. The die attach material extends into the nanoparticle layer and contacts at least a portion of the nanoparticles.

In described examples, a microelectronic device includes a microelectronic die with a die attach surface. The microelectronic device further includes a nanoparticle layer coupled to the die attach surface. The nanoparticle layer may be in direct contact with the die attach surface, or may be coupled to the die attach surface through an intermediate layer, such as an adhesion layer or a contact metal layer. The nanoparticle layer includes nanoparticles having adjacent nanoparticles adhered to each other. The microelectronic die is attached to a package substrate by a die attach material. The die attach material extends into the nanoparticle layer and contacts at least a portion of the nanoparticles.