A solder reflow apparatus may include a reflow chamber, a heater and a stage. The reflow chamber may be configured to receive a heat transfer fluid. The heat transfer fluid may be configured for transferring heat to a solder for mounting an electronic part on a substrate. The heater may be configured to heat the heat transfer fluid in the reflow chamber. The stage may be in the reflow chamber to support the substrate. The stage may be inclined to a bottom surface of the reflow chamber to induce the heat transfer fluid toward a central portion of the substrate. Thus, the vertically ascended heat transfer fluid may be uniformly applied to the central portion and an edge portion of the substrate so that the solders at the central portion and the edge portion of the substrate may be uniformly soldered.

A substrate bonding apparatus includes a first bonding chuck having a first base, a deformable plate on the first base to support a first substrate, and a lower pressurer under the first base to apply pressure to the deformable plate, and a second bonding chuck vertically spaced apart from the first bonding chuck and having a second base to fix a second substrate, and an upper pressurer to apply pressure to the second substrate. The deformable plate includes an outer portion surrounding a center portion, a bottom surface of the outer portion of the deformable plate being adhered to the first base, the center portion being deformable in the vertical direction by the lower pressurer, and thicknesses of the center and outer portions of the deformable plate in the vertical direction being different from each other.

A 3D integrated structure and a method for fabricating the structure. In the method, a first trimming process is performed in a peripheral region of a wafer stack to form a chamfered surface adjacent to and surrounding an active device region. As a result, a thickness of the wafer stack along the chamfered surface gradually decreases from an edge of the active device region outward. In this way, a photoresist layer can be subsequently easily applied to cover the junction of the active device region and the chamfered surface, without the formation of discontinuities there, which may affect the subsequent processes. Additionally, in the method, a second trimming process is performed at an edge of the peripheral region to form a clamping surface adjacent to and surrounding the chamfered surface. In this way, it is unnecessary to clamp the wafer stack at a top surface thereof.

Provided are mounting devices and mounting methods configured to realize high-precision mounting. A mounting device including a bonding actuator having a housing, a slider accommodated in the housing in a non-contact state and provided with a head, a coil and a yoke in a non-contact state, two voice coil motors (VCMs) driven in an X-axis direction, three VCMs driven in a Y-axis direction, and one VCM driven in a Z-axis direction may be provided. The coil may be fixed to the housing and the yoke may be fixed to the slider. The bonding actuator may perform bonding while adjusting a relative position and parallelism of a chip and a wafer, by driving the slider in six axial directions, which include the X-axis direction, the Y-axis direction, the Z-axis direction, a Tx direction, a Ty direction, and a Tz direction.

An apparatus for handling a semiconductor wafer includes an upper wafer holder that has a front surface, and a compliant ring that is mounted around the upper wafer holder and has a front surface. The front surface of the compliant ring is flush with the front surface of the upper wafer holder and extends from the front surface of the upper wafer holder in a radial direction without extending beyond the front surface of the wafer holder in an axial direction. A method includes providing a first wafer with a bonding surface and back surface, the back surface of the wafer in contact with the front surfaces of the wafer holder and the compliant ring. The first wafer contacts a second wafer so a bond forms between the wafers in a radial direction, the compliant ring flexibly restricting the movement of the first wafer relative to the second wafer.

A chip bonding apparatus and a securing assembly therefor are disclosed. The securing assembly includes a securing bracket, a sliding bracket, and a slide. A first open slot is arranged in the securing bracket, wherein the sliding bracket is slidably mounted on the first open slot, a snap-fitting portion is arranged on a side portion of the sliding bracket, and at least one catch slot that is engageable with the snap-fitting portion to secure the sliding bracket is arranged in the securing bracket. A second open slot is arranged in the sliding bracket, wherein a slideway is arranged in each of two side walls of the second open slot, and the slide is inserted into the slideway and hence mounted in the second open slot.

The present invention relates to an apparatus and method for wafer oxide removal and reflow treatment. In particular, the present invention relates to an apparatus for wafer oxide removal and reflow treatment, comprising: a heating plate, a sample plate for supporting a wafer sample above the heating plate, and an electron attachment pin plate above the sample plate, wherein the heating plate is configured to be capable of moving up and down, and contacting and heating the sample plate.

A wire bonding apparatus (100) includes a bonding stage (12), a bonding head (20), an XY driving mechanism (30), and a frame (50). The XY driving mechanism (30) includes: an X-direction guide (31) installed to the frame (50); an X-direction slider (32), supported by the X-direction guide (31) and moving in the X direction, an X-direction mover (41) being installed thereto; a Y-direction guide (33) installed to a lower side of the X-direction slider (32); and a Y-direction slider (34), supported by the Y-direction guide (33) and moving in the Y direction, the bonding head (20) being installed thereto. The XY driving mechanism (30) is installed to the frame (50), so that a portion of the Y-direction guide (33) is overlapped with a mounting surface (12a) of a bonding stage (12) above the mounting surface (12a) and behind the mounting stage (12) in the Y direction.

A bonding method includes a substrate holding step of holding substrates (W1, W2), a first contact step of bringing central portions of the substrates (W1, W2) into contact with each other, a second contact step of, enlarging a contact area between the substrates (W1, W2) from central portions toward peripheral portions of the substrates (W1, W2), and a bonding step of, bonding the substrates (W1, W2) to each other by pressing only a peripheral portion of the substrate (W1) against a peripheral portion of the substrate (W2) while the substrates (W1, W2) are in contact with each other over entire bonding surfaces.

A bonding apparatus for a semiconductor device including: a substrate state having a seating surface on which a first semiconductor device is placed; a head portion having a lower surface, the head portion configured to hold a second semiconductor device on the lower surface to face the first semiconductor device, the lower surface including a first portion having a first height from the seating surface and a second portion having a second height from the seating surface, the second height being greater than the first height, the lower surface being inclined at an angle with respect to the seating surface; and a transfer portion provided on the head portion to move the head portion, the transfer portion configured to press the head portion from the first portion to the second portion such that the first and second semiconductor devices are bonded to each other.