An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

A method for inter-substrate transfer of microelectronic devices includes applying a polymer coating to a top surface of a microelectronic device located on a first substrate, depositing an ultraviolet-transmissive adhesive on a second substrate, contacting the polymer-coated top surface of the microelectronic device to the adhesive to bond the microelectronic device to the second substrate, detaching the microelectronic device from the first substrate, and, while the bottom surface of the microelectronic device faces a third substrate, irradiating and ablating the polymer coating with ultraviolet laser light through the second substrate and the adhesive to transfer the microelectronic device from the second substrate to the third substrate via laser lift-off. The method allows for use of ultraviolet-transmissive adhesives, with the polymer coating protecting the microelectronic device from damage by ultraviolet light that, in the absence of the polymer coating, would be transmitted by the adhesive during laser lift off.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

Micro light-emitting diode (LED) displays and assembly apparatuses are described. In an example, method of manufacturing a micro-light emitting diode (LED) display panel includes positioning a display backplane substrate in a tank or container, the display backplane substrate having microgrooves therein. The method also includes adding a fluid to the tank or container, the fluid including a suspension of light-emitting diode (LED) pixel elements therein. The method also includes moving the fluid over the display backplane substrate. The method also includes assembling LED pixel elements from the fluid into corresponding ones of the microgrooves.

Micro light-emitting diode (LED) displays and assembly apparatuses are described. In an example, method of manufacturing a micro-light emitting diode (LED) display panel includes positioning a display backplane substrate in a tank or container, the display backplane substrate having microgrooves therein. The method also includes adding a fluid to the tank or container, the fluid including a suspension of light-emitting diode (LED) pixel elements therein. The method also includes moving the fluid over the display backplane substrate. The method also includes assembling LED pixel elements from the fluid into corresponding ones of the microgrooves.

The present application discloses a light emitting diode comprising a substrate; and a light emitting layer on the substrate. The light emitting layer comprises, an N-type doped layer; a quantum well active layer; and a P-type doped layer. At least one of the N-type doped layer and the P-type doped layer comprises an uneven layer adapted to concentrate light emitting from the light emitting layer.

Micro light-emitting diode (LED) displays and assembly apparatuses are described. In an example, method of manufacturing a micro-light emitting diode (LED) display panel includes positioning a display backplane substrate in a tank or container, the display backplane substrate having microgrooves therein. The method also includes adding a fluid to the tank or container, the fluid including a suspension of light-emitting diode (LED) pixel elements therein. The method also includes moving the fluid over the display backplane substrate. The method also includes assembling LED pixel elements from the fluid into corresponding ones of the microgrooves.

An electronic device includes a substrate, a plurality of connecting pads, a plurality of conductive portions overlapped with the plurality of connecting pads, a plurality of conductive lines, an insulating layer, and an integrated chip. At least one of the conductive lines is overlapped with at least one of the conductive portions, and at least one of the connecting pads is electrically connected to the at least one of the conductive lines through the at least one of the conductive portions. The insulating layer is disposed between the at least one of the connecting pads and the at least one of the conductive portions, wherein the insulating layer directly contacts a top surface and a lateral surface of the at least one of the conductive portions. The integrated chip is electrically connected to the at least one of the conductive lines.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.