A light-emitting diode includes a first semiconductor region of one of p- or n-conductivity types, a second semiconductor region of the other one of p- or n-conductivity types, forming a p-n junction with the first semiconductor region, and a quantum well layer at the p-n junction between the first and second semiconductor regions. A hyperbolic metamaterial structure is provided in the second semiconductor region. The hyperbolic metamaterial structure is coupled to the quantum well layer for extracting light from the quantum well layer. The hyperbolic metamaterial structure may be patterned to provide an array of nanoantennas to apodize the emitted beam, and to control the polarization state of the emitted beam.

An optoelectronic device includes at least one optoelectronic light source having an active region for generating light and a light emitting surface for emitting the generated light, an electrically conductive layer extending between the light emitting surface and the active region, and a photonic crystal structure. The photonic crystal structure is arranged in the electrically conductive layer. The at least one optoelectronic light source is a plurality of optoelectronic light sources. The optoelectronic light sources of the plurality of optoelectronic light sources are arranged in an array-like structure. Each of the optoelectronic light sources has an active region which is separate from the active regions of the other optoelectronic light sources. The electrically conductive structure extends over all optoelectronic light sources of the plurality of optoelectronic light sources.

An optoelectronic device including at least first and second light-emitting diodes, each including a first P-type doped semiconductor portion and a second N-type doped semiconductor portion, an active area including multiple quantum wells between the first and second semiconductor portions, a conductive layer covering the lateral walls of the active area and of at least a portion of the first semiconductor portion, and an insulating layer interposed between the lateral walls of the active area and of at least a portion of the conductive layer. The device includes means for controlling the conductive layer of the first light-emitting diode independently from the conductive layer of the second light-emitting diode.

A ceramic wavelength converter assembly may include two first layers having an undoped host material or a doped host material, two second layers having a barrier material and being disposed between the two first layers, and a third layer having an undoped host material or a doped host material and being disposed between the two second layers. The two first layers may include the undoped host material and the third layer may include the doped host material, or the two first layers may include the doped host material and the third layer may include the undoped host material. At least one of the two first layers may have a patterned structure.

Disclosed is a method for producing a laminate of a resin film and a perovskite film, including compressing a preliminary product having a resin film, a perovskite film and an inorganic support in that order with heating, followed by separating the laminate of a resin film and a perovskite film from the inorganic support. According to the production method, a perovskite film having a fine indented pattern such as a diffraction grating structure can be produced in a simplified manner

The present disclosure discloses a quantum dot light-emitting device and a display device. The quantum dot light-emitting device includes: a concave frame having a chip mounting region, a light-emitting diode chip disposed in the chip mounting region, the light-emitting diode chip adapted to emit a first light; a quantum dot layer disposed on the light exit direction of the light-emitting diode chip; a functional layer disposed between the light-emitting diode chip and the quantum dot layer, the functional layer is a first functional layer or a second functional layer; the first functional layer has a reflectivity greater than or equal to R with respect to the first light having angle of incidence less than or equal to i, and the first functional layer has a reflectivity less than R with respect to the first light having angle of incidence greater than i, wherein R≤90%, i>0°.

A light emitting diode (LED) and a light purification method therefor are provided, which belong to the technical field of LED. The LED includes an epitaxial structure and a light purification layer plated on the epitaxial structure. The light purification layer includes a first reflection layer and defines multiple light-exiting holes. The first reflection layer is plated on the epitaxial structure. The multiple light-exiting holes each extend through the first reflection layer and have an aperture which is N times a preset wavelength of an exit light, N being an integer and N≥1.

A light emitting device includes a light emitting diode configured to emit blue or ultraviolet radiation incident photons, a color conversion material located over the light emitting diode and configured to absorb the incident photons emitted by the light emitting diode and to generate converted photons having a longer peak wavelength than a peak wavelength of the incident photons, and at least one light extracting feature located between the light emitting diode and the color conversion material.

An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.

Disclosed is a LED module. The LED module includes a cover part, a board part connected to a front side of the cover part, a light emitting part electrically connected to the board part, disposed on a front side of the board part, and that emits light through a side surface thereof, and a panel part disposed on the front side of the board part, and the panel part includes a light guide unit including a plurality of light output parts that guides and outputs light emitted from the side surface of the light emitting part.