A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface in a periodic manner, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The first conductive type semiconductor layer includes a plurality of protrusions each facing a portion of the substrate between the bumps, the protrusions are positioned in a ring manner at a peripheral region of the first conductive type semiconductor layer, and the protrusions are spaced apart from the bumps.

A light-emitting device assembly includes an emitter array of light-emitting elements, a transparent substrate, a structured lens, and an angular filter. The emitter array emits from its emission surface output light that is transmitted through the substrate, and enables selective activation of and emission from individual elements or subsets of elements of the array. The structured lens is formed on or in the substrate, and comprises micro- or nano-structured elements resulting in an effective focal length less than an effective distance between the structured lens and the emission surface. The angular filter is positioned on or in the substrate or on the emission surface and exhibits decreasing transmission or a cutoff angle with increasing angle of incidence.

A light-emitting unit includes: a wiring board; light-emitting elements on the wiring board; a light reflecting member on the wiring board, the light reflecting member covering a lateral surface of each of the light-emitting elements; wavelength conversion layers each provided on or above an emission surface of a corresponding one of the plurality of light-emitting elements; light reflecting layers on the wavelength conversion layers, respectively; and a protecting layer configured to transmit light and provided on the light reflecting member. The light-transmitting protecting layer covers at least a lateral surface of the wavelength conversion layers and at least a lateral surfaces of the light reflecting layers. An upper surface of the protecting layer has a first recess in a region where the plurality of light reflecting layers are not present in a top view. The first recess includes at least one concave surface.

This invention is a photon-interactive Gaussian surface lens method means that converts incident photons from a single or a plurality of wide band gap semiconductor class light emitting diode dies, into a secondary emission of photons emanating from a composite photon transparent colloidal stationary suspension of quantum dots, high efficiency phosphors, a combination of quantum dots and high efficiency phosphors and nano-particles of metal, silicon or similar semiconductors from the IIIB and IVB Group of the Periodic Table and any nano-material and/or micro/nano spheres that responds to Rayleigh Scattering and/or Mie Scattering; and a plurality of quantum dots in communication with said nano-particles in said suspension. The apparatus and methods according to the present invention provides in improved narrow pass-band of red, green, and blue photon efficiency over phosphor based conversion. Utilizing the invention's methodology, the white resultant colour temperature is stabilized against internal semiconductor thermal fluctuations or ambient thermal variations.

The present invention relates to a semiconductor nanocrystal-siloxane composite resin composition and a preparation method thereof, and more specifically to a semiconductor nanocrystal-siloxane composite resin composition in which semiconductor nanocrystals are dispersed and bonded to a siloxane composite resin obtained by condensation reaction of a mixture of one or more organoalkoxysilanes or organosilanediol, and a preparation method thereof. The cured product of the semiconductor nanocrystal-siloxane resin composition of the present invention can be prepared as a coating, a film, a flake, etc., and the inherent characteristics of the semiconductor nanocrystal are maintained in a high temperature and high humidity environment and the reliability of the application devices is improved.

The present invention provides a curable composition containing semiconductor nanoparticles, which contains luminescent semiconductor nanoparticles having good dispersibility and has low viscosity and excellent formability. Al curable composition containing semiconductor nanoparticles, contains: a monofunctional (meth)acrylate compound (a) having a tricyclodecane structure; at least one compound (h) selected from among (meth)acrylate compounds (b1) having two or more (meth)acryloyloxy groups and compounds (b2) represented by formula (1); a polymerization initiator (c); and luminescent semiconductor nanoparticles (d). H.sub.2C═C(R.sup.1)—CH.sub.2—O—CH.sub.2—C(R.sup.2)═CH.sub.2 (1) (In formula (1). R.sup.1 and R.sup.2 each independently represent a hydrogen atom,an alkyl group having 1 to 4 carbon atoms, or an organic group having 4 to 10 carbon atoms having an ester bond)

A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.

An emissive Solid State Imager (SSI) comprised of a spatial array of digitally addressable multicolor micro pixels. Each pixel is a micro optical cavity comprising multiple photonic layers of blue-violet semiconductor light emitting diode. One of the photonic layers is used to generate light at the blue primary of the SSI. Two of the photonic layers are used to generate violet-blue excitation light which is converted with associated nanophosphors layer into the green and the red primaries of the SSI. The light generated is emitted perpendicular to the plane of the imager device via a plurality of vertical optical waveguides that extract and collimate the light generated. Each pixel diode is individually addressable to enable the pixel to simultaneously emit any combination of the colors associated with its multicolor nanophosphors converted semiconductor light emitting diode at any required on/off duty cycle for each color.

The light emitting device includes: a light emitting element, a covering member, a pair of electrode layers, and a pair of electrode terminals. The light emitting element has an electrode-formed surface on which a pair of electrode posts are formed. The covering member covers an electrode-formed surface of the light emitting element while forming an exposed portion of each of the pair of electrode posts which is exposed from the covering member. The pair of electrode layers are provided on a surface of the covering member and electrically connected to the exposed portions of the pair of electrode posts. The pair of electrode terminals are electrically connected to the pair of electrode layers, and provided on the surface of the covering member. The pair of electrode terminals are thicker than the pair of electrode layers, and are disposed at an interval larger than an interval between the pair of electrode posts.

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.