A semiconductor light emitting device includes a substrate formed of a first material; and a convex portion protruding from the substrate and including: a first layer formed of the first material as that of the substrate; and a second layer formed of a second material different from the first material and disposed on the first layer. A second height of the second layer is greater than a first height of the first layer.

The present invention relates to a substrate for the color conversion of a light-emitting diode and a manufacturing method therefor and, more specifically, to a substrate for the color conversion of a light-emitting diode and a manufacturing method therefor, which enable a quantum dot (QD) and a structure, in which the QD is supported, to have a color conversion function for implementing white light. To this end, the present invention provides a substrate for the color conversion of a light-emitting diode, comprising: a first glass substrate arranged on a light-emitting diode; a second glass substrate formed to face the first glass substrate; a structure arranged between the first glass substrate and the second glass substrate, having a hollow portion and formed from a mixture of a yellow phosphor and a low-melting point frit glass; a QD filling the hollow portion; and sealing materials respectively formed between the first glass substrate and the lower side of the structure and between the second glass substrate and the upper side of the structure.

An LED driving device includes a converter module configured to receive an input voltage and generate an output voltage for driving a plurality of LEDs. A surge protection module is electrically connected to the converter module. A case holds the converter module and the surge protection module, and provides electrical coupling therebetween.

An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.

A semiconductor light emitting device includes a light extraction layer having a light extraction surface. Multiple cone-shaped parts formed in an array are provided on the light extraction surface of the semiconductor light emitting device. A proportion of an area occupied by the multiple cone-shaped parts per a unit area of the light extraction surface is not less than 65% and not more than 95% in a plan view of the light extraction surface, and an aspect ratio h/p defined as a proportion of a height h of the cone-shaped part relative to a distance p between apexes of adjacent cone-shaped parts is not less than 0.3 and not more than 1.0.

A light-emitting device includes a light-emitting unit comprising a top surface and a first side surface; a light-transmitting layer covers the top surface and the first side surface; a wavelength conversion structure disposed on the light-transmitting layer; a protective layer covering the second side surface and the light-transmitting layer; and a reflective layer surrounding the protective layer. The wavelength conversion structure includes a wavelength conversion layer, a first barrier layer disposed on the wavelength conversion layer, a second barrier layer disposed under the wavelength conversion layer, the wavelength conversion layer, the first barrier layer, and the second barrier layer are collectively formed a second side surface.

A light emitting device comprises a semiconductor diode structure configured to emit light, a substrate that is transparent to light emitted by the semiconductor diode structure, and a reflective nanostructured layer. The reflective nanostructured layer may be disposed on or adjacent to a bottom surface of the substrate and configured to reflect toward and through a side wall surface of the substrate light that is emitted by the semiconductor structure and incident on the reflective nanostructured layer at angles at or near perpendicular incidence. Alternatively, the reflective nanostructured layer may be disposed on or adjacent to at least one sidewall surface of the substrate and configured to reflect toward and through the bottom surface of the substrate light that is emitted by the semiconductor structure and incident on the reflective nanostructured layer at angles at or near perpendicular incidence.

The invention synthesizes a social network, electronic commerce (including performance based advertisement and electronic payment), a mobile internet device and a machine learning algorithm(s), utilizing a classical computer or a quantum computer enhanced machine learning algorithm(s), utilizing a quantum computer. The synthesized social commerce further dynamically integrates stored information, real time information and real time information/data/image(s) from an object/array of objects (Internet of Things (IoT)). The machine learning algorithm(s), utilizing a classical computer can include a software agent, a fuzzy logic algorithm, a predictive algorithm, an intelligence rendering algorithm and a self-learning (including relearning) algorithm.

An image display element includes micro light emitting elements arranged in an array, a drive circuit substrate that includes a drive circuit for supplying a current to the micro light emitting elements to cause light to be emitted, and an antenna arranged on a light emitting surface of each of the micro light emitting elements, in which the antenna includes isolated convex portions.

Networks of semiconductor structures with fused insulator coatings and methods of fabricating networks of semiconductor structures with fused insulator coatings are described. In an example, a semiconductor structure includes an insulator network. A plurality of discrete semiconductor nanocrystals is disposed in the insulator network. Each of the plurality of discrete semiconductor nanocrystals is spaced apart from one another by the insulator network.