A process for fabricating an optoelectronic device for emitting infrared radiation, including: i) producing a first stack containing a light source, and a first bonding sublayer made from a metal of interest chosen from gold, titanium and copper, ii) producing a second stack containing a GeSn-based active layer obtained by epitaxy at an epitaxy temperature (T.sub.epi), and a second bonding sublayer made from the metal of interest, iii) determining an assembly temperature (Tc) substantially between an ambient temperature (T.sub.amb) and the epitaxy temperature (T.sub.epi), such that a direct bonding energy per unit area of the metal of interest is higher than or equal to 0.5 J/m.sup.2; and iv) joining, by direct bonding, at the assembly temperature (Tc), the stacks.

A display device is provided. The display device includes a first substrate, a display unit, a second substrate, and a light shielding structure. The display unit is disposed on the first substrate and includes at least one light emitting diode chip. The light shielding structure surrounds the light emitting diode chip of the display units and is located between the first substrate and the second substrate.

Techniques, devices and materials for light source devices that convert excitation light into different light via wavelength conversion materials. One example of a light source includes an excitation light source; a wavelength conversion material that absorbs light from the excitation light source and emits a longer wavelength light; and a layer of a transparent material that has plural optical structures in contact to or in close proximity to the wavelength conversion material to receive the emitted light from the wavelength conversion material and to modify the received light to produce output light with a desired spatial pattern associated with the plural optical structures.

An optical device comprising: a photonic crystal structure, comprising: a layer of a first material, the layer comprising a quantum emitter; and a plurality of regions of a second material in the layer of the first material, the regions arranged in a regular lattice having at least one region missing from the lattice so that a defect is formed, wherein the quantum emitter is located in the defect part of the photonic crystal structure; wherein the second material has a different refractive index to the first material; and an electrode which is electrically contacted to only the defect part of the photonic crystal structure.

Provided is a biosensor. The biosensor includes a substrate, an optical structure provided on the substrate, and a cover provided on the substrate and having a bridge shape that is in contact with a top surface of the substrate at both sides of the optical structure. The cover has a channel extending in a first direction, the optical structure is provided inside the channel, and the optical structure is configured to capture biomaterials that travel through the channel.

Disclosed herein is a multiple light emitter device which inactivates microorganisms. The device includes at least two light emitters and at least one light-converting material arranged to convert at least a portion of light from the light emitters. Any unconverted light emitted from the light emitters and converted light emitted from the at least one light-converting material mixes to form a combined light, the combined light being white. In one aspect, the light emitters include at least one blue light emitter and at least one violet light emitter. In another aspect, the light emitters include one blue light emitter and one emitter within the range of approximately yellow to infrared light.

A semiconductor light-emitting element according to an embodiment of the present technology includes a first electrode, a second electrode, a light-emitting layer constituted by a semiconductor, and an optical functional film. The light-emitting layer includes a first surface that is connected to the first electrode and has a first convexo-concave structure, a second surface that is connected to the second electrode, has a second convexo-concave structure, and is opposite to the first surface, and a peripheral surface that continuously connects the first surface and the second surface to each other. The optical functional film coats the second surface and the peripheral surface and includes a reflecting layer capable of reflecting light emitted by the light-emitting layer.

A nanowire optical device includes: a photonic crystal body having a planar shape and provided on a base part; an optical waveguide by a line defect in which a plurality of defects including a part without grating elements of the photonic crystal body are linearly arrayed; a trench formed in a waveguide direction in the optical waveguide; a nanowire made of a semiconductor and arranged in the trench; an n-type region formed on one end side of the nanowire; a p-type region formed on the other end side of the nanowire; an active region provided to be interposed between the n-type region and the p-type region in the nanowire; a first electrode connected to the n-type region; and a second electrode connected to the p-type region.

Various embodiments of optical metalens and electronic displays using metalenses are described herein. In some embodiments, a metalens includes an array of passive deflector elements with varying diameters that extend from a substrate with a repeating pattern of deflector element diameters. Interelement on-center spacings of the passive deflector elements may be selected as a function of an operational wavelength of the optical metalens. Each passive deflector element has a height and a width that are each less than a smallest wavelength within the operational bandwidth. An electronic display may include a multi-pixel light-emitting diode (LED) display, such as an RGB LED display. A metalens comprising a plurality of metalens subpixels may deflect the optical radiation from each corresponding LED subpixel at a target deflection angle. Each metalens subpixel may include a two-dimensional array of passive deflector elements in a repeating pattern of deflector element diameters.

A light-emitting device comprises a substrate; a first semiconductor layer formed on the substrate; a first patterned layer formed on the first semiconductor layer; and a second semiconductor layer formed on the first semiconductor layer, wherein the second semiconductor layer comprises a core layer comprising a group III or transition metal material formed along the first patterned layer.