A display panel includes a light emitting panel including a light emitting unit; and a color conversion panel. The color conversion panel includes a color conversion layer including a color conversion region including semiconductor nanoparticles, and a partition wall defining the color conversion region. An optical diffuser is between the light emitting unit and the color conversion region to cover a light extraction surface of the light emitting unit. A length of the light extraction surface of the light emitting unit is greater than or equal to about 500 nm and less than or equal to about 100 μm and a ratio of a length of the optical diffuser to the length of the light extraction surface of the light emitting unit is greater than or equal to about 1.4:1 and less than or equal to about 60:1.

The present disclosure relates to a light emitting module and a display apparatus using the same. Specifically, one embodiment of the present disclosure provides a light emitting module including: a light emitting structure configured to emit light; and a light transmitting layer configured to transmit light emitted from the light emitting structure, wherein the light transmitting layer has a light scattering region in which one or more voids for refracting the light are formed.

A semiconductor light emitting device includes a light extraction layer having a light extraction surface. The light extraction layer includes: a plurality of cone-shaped parts formed in an array on the light extraction surface, and a plurality of granular parts formed both on a side part of the cone-shaped part and in a space between adjacent cone-shaped parts. A method of manufacturing the semiconductor light emitting device includes: forming a mask having an array pattern on the light extraction layer; and etching the mask and the light extraction layer from above the mask. The etching includes first dry-etching performed until an entirety of the mask is removed and second dry-etching performed to further dry-etch the light extraction layer after the mask is removed.

A display device comprises sub-pixels, a bank disposed on a substrate and disposed at a boundary between the sub-pixels, a wavelength control layer including wavelength conversion layers disposed in a region surrounded by the bank and a light transmitting layer disposed in the sub-pixels, a color filter layer disposed on the wavelength control layer, and light emitting element layers disposed between the substrate and the wavelength control layer, the light emitting layers including a light emitting element disposed in one of the sub-pixels, and connection electrodes connected to ends of the light emitting element. Each of the wavelength conversion layers contacts at least one of the connection electrodes

There is provided a light emitting diode, LED, filament lamp (100) which provides LED filament lamp light (100′). The LED filament lamp (100) comprises at least one LED filament (101) which has a LED filament length (L) which extends from a first end (1003) to a second end (1004). The at least one LED filament (101) provides LED filament light (101) and comprises an array (102) of a plurality of LEDs (103) and an encapsulant (104). The array (102) of a plurality of LEDs (103) provide LED light (103′) and extend along the LED filament length (L). The encapsulant (104) is at least partially enclosing the plurality of LEDs (103). The encapsulant (104) comprises a light scattering material (105). In the direction from the first end (1003) to the second end (1004) at least one of (i) the thickness (TL) of the encapsulant (104), and (ii) the concentration (CL) of the light scattering material (105) in the encapsulant (104), along the LED filament length (L) increases over at least two adjacent first LEDs (106) and decreases over at least two adjacent second LEDs (107) different from the at least two adjacent first LEDs (106), and wherein the thickness (TL) and/or concentration (CL) firstly increases and secondly decreases at least along a portion of the LED filament length (L).

A first pixel with a first pixel sidewall is disclosed. A second pixel with a second pixel sidewall facing the first pixel sidewall is also disclosed. A first dynamic optical isolation material between the first pixel sidewall and the second pixel sidewall and configured to change an optical state based on a state trigger such that a light behavior at the first pixel sidewall for a light emitted by one of the first pixel and the second pixel is determined by the optical state, is also disclosed.

A light emitting device includes a substrate, a light source, a cover member, a light transmissive member disposed on or above the light source, a light reflecting layer disposed on or above the light transmissive member, and a light transmissive cover member. The cover member is made of a resin material containing a light reflecting substance and covers a lateral face of the light source. The light transmissive cover member covers at least a lateral face of the light transmissive member and includes an annular lens part. A thickness of a portion of the light transmissive cover member disposed above a perimeter of the light reflecting layer is larger than a thickness of a portion of the light transmissive cover member disposed above a portion of the light reflecting layer where an optical axis of the light emitting element passes through.

Segmented LED arrays with various diffusing elements are disclosed. An example segmented LED array includes a plurality of LEDs arranged in a plurality of sections where a given section may include one or more LEDs and where each section may be aligned with a different respective optical element such as a lens. Each LED may be a wavelength-converting LED in that it may include a light emitter arrangement and a wavelength-converter structure. In various embodiments, diffusing elements in the form of one or more structures of a diffuser material may be provided over the wavelength-converter structure of one or more LEDs, the one or more structures being in a light path between the wavelength-converter structure and at least one of the plurality of optical elements, and configured to diffuse light emerging from the wavelength-converter structure.

In an embodiment a semiconductor light source includes an optoelectronic semiconductor chip configured to emit radiation and a cover body arranged on the optoelectronic semiconductor chip, wherein the cover body comprises a light-transmissive base body, wherein the light-transmissive base body comprises a plurality of recesses with inclined side faces, the recesses start at an emission side of the light-transmissive base body remote from the optoelectronic semiconductor chip and narrow towards the optoelectronic semiconductor chip, wherein a mirror coating is provided at top regions of the recesses next to the emission side, and wherein bottom regions of the recesses closest to the optoelectronic semiconductor chip are free of the mirror coating.

A display panel, a display device and a forming method of the display panel. The display panel includes a first region, and the display panel includes: a substrate; a light-emitting device layer stacked on the substrate. The light-emitting device layer includes a plurality of first light-emitting devices distributed in an array in the first region, and the first light-emitting device includes a first electrode, a particle unit disposed at least partially in a same layer with the first electrode and surrounding the first electrode, a first light-emitting module located on the first electrode, and a second electrode located on the first light-emitting module. The particle unit includes a glue layer and a plurality of particles distributed within the glue layer.