A light-emitting device includes a substrate and a semiconductor light-emitting stack. The substrate includes an upper surface, a first side surface, and a second side surface adjacent to the first side surface. The semiconductor light-emitting stack includes a first conductivity type semiconductor layer, a light-emitting layer, and a second conductivity type semiconductor layer that are sequentially disposed on the upper surface of the substrate in such order. The first side surface includes X number of first laser inscribed marks, and the second side surface includes Y number of second laser inscribed marks, in which Y>X>0 and Y≥3. A method for manufacturing the light-emitting device is also provided herein.

A flexible surface lighting device is disclosed. The flexible surface lighting device includes: a flexible substrate including an upper insulating film, a lower insulating film, and a thin metal layer interposed between the upper and lower insulating films; a plurality of micro-LED chips two-dimensionally arrayed on the top surface of the flexible substrate; and a flexible light-transmitting resin part disposed on the top surface of the flexible substrate to cover the top and side surfaces of the micro-LED chips. The flexible substrate includes a white reflective layer in contact with the light-transmitting resin part on the upper insulating film.

The invention relates to a method for producing a light-emitting diode comprising a semiconductor stack formed of a first layer 11, of an active layer 13, and of an extraction layer 6. It comprises a step of determining a distance h.sub.1s between emitting dipoles μ.sub.1 that are located in the active layer 13 and the extraction layer 6, such that the emitting dipoles μ.sub.1 of vertical orientation have in particular a lifetime longer than that of the emitting dipoles of horizontal orientation.

A backlight module includes a substrate, a light blocking unit, and a plurality of light-emitting chips. The light blocking unit is disposed on the substrate, and includes a carbon black, a scattering particle and a resin. The scattering particle is one of titanium dioxide, silicon dioxide, barium sulfate, and combinations thereof. The light blocking unit cooperates with the substrate to form a plurality of spaced-apart wells. The light-emitting chips are disposed in the wells, respectively, to permit optical units to be disposed thereon. A display device including the backlight module, and a method for making the display device are also provided herein.

A semiconductor light emitting element for a display device can include a semiconductor light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a light extraction structure disposed on top of the second conductivity type semiconductor layer of the semiconductor light emitting structure, in which the light extraction structure includes a plurality of organic protrusions protruding in a vertical direction of the second conductivity type semiconductor layer; and a surface roughness pattern formed on at least a portion of a top surface of the second conductivity type semiconductor layer, and at least one of the plurality of organic protrusions contains nanoparticles positioned at an end of the at least one of the plurality of organic protrusions and an organic component supporting the nanoparticles.

The present invention provides a display substrate and a display device. The display substrate comprises a backplate and a plurality of pixel units; each pixel unit of the pixel units comprises a white light LED; a collimating lens configured to collimate a white light beam; a prism layer configured to reflect the white light beam to generate monochromatic lights of different colors in a first direction and a second direction; transmittance controllers configured to modulate the transmittance of monochromatic lights of different colors; and scattering layers configured to scatter monochromatic lights of different colors. In the present application, achieving the double-sided display of a Micro-LED display device, increasing the functionality and interestingness of the display device, and reducing the workload for mass transfer of the Micro-LED display device and the complexity of circuit arrangements of the display device.

The present disclosure provides an LED light source, a surface light source display module, and a preparation method for the LED light source. The LED light source includes: an LED chip including a first reflective layer, a P—GaN layer, a light-emitting layer, an N—GaN layer and a substrate, which are sequentially arranged from bottom to top; a light excitation layer configured for emitting light upon excitation with a blue light, wherein the LED chip is covered by the light excitation layer, that is, the light excitation layer is disposed on a top surface of the substrate of the LED chip and in contact with a side surface of the LED chip, wherein four side surfaces of the light excitation layer are defined as light output regions; and a second reflective layer disposed on a top surface of the light excitation layer, and a top surface of the second reflective layer is defined as a total reflection region or a partial reflection region. The light emission angle of the LED light source can be enlarged.

A light emitting device includes: a substrate including a base member including an upper surface, a lower surface and one or more lateral surfaces, and defining a recess that is opened at the upper surface and the lateral surfaces and surrounds an outer perimeter of the upper surface; a first light emitting element; a second light emitting element; a light guide member covering the first and the second light emitting elements and the upper surface of the base member; and a first reflective member having a closed-ring shape surrounding the upper surface of the base member and the light guide member, a portion of the first reflective member being located in the recess. At least one of the lateral surfaces of the base member and corresponding at least one of one or more outer lateral surfaces of the first reflective member are in the same plane.

The display device according to the present invention comprises: a substrate; semiconductor light-emitting diodes disposed on the substrate; a planarization layer formed so as to cover the semiconductor light-emitting diodes; and wire electrodes electrically connected to the semiconductor light-emitting diodes, wherein the substrate comprises individual pixel areas in which the semiconductor light-emitting diodes are disposed, and the individual pixel areas are each any one of first individual pixel areas, in which the semiconductor light-emitting diodes are disposed and which emit the light output by the semiconductor light-emitting diodes, and second individual pixel areas, in which a repair layer is disposed so as to emit the light output by an adjacent first individual pixel area.

A light emitting diode display panel may comprise a substrate, a plurality of light emitting diodes located over the substrate, and an optical assembly located over the plurality of light emitting diodes. The optical assembly may include a lens array and a diffuser. An inner surface of the lens array may define a plurality of inner curves.