Patent classifications
H01L2933/0091
Device with inverted large scale light extraction structures
An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.
Light-emitting device with exposed filter particles
A light-emitting device includes a package, a light-emitting element disposed on the package, and a light-transmissive member over the light-emitting element. An upper surface of the light-transmissive member and an upper surface of the package each have a plurality of projections. The light-transmissive member contains particles of light-transmissive first fillers having refractive indices smaller than the refractive index of a matrix of the light-transmissive member. Part of the particles of the first fillers is exposed to the air from the matrix of the light-transmissive member on the upper surface of the light-transmissive member.
LIGHTING SYSTEM WITH LENS ASSEMBLY
According to at least one aspect, a lighting device is provided. The lighting device comprises a circuit board, an LED mounted to the circuit board that is configured to emit light with an angular CCT deviation, a lens assembly mounted to the circuit board over the LED and configured to receive the light emitted from the LED and reduce the angular CCT deviation of the light received from the LED to make a color temperature of the light received from the LED more uniform, and an elastomer encapsulating at least part of the circuit board that is separate and distinct from the lens assembly.
DISPLAY SUBSTRATE AND PREPARATION METHOD THEREOF, AND DISPLAY PANEL AND PREPARATION METHOD THEREOF
The present disclosure discloses a display substrate, including a substrate, and a driver circuit, an insulation layer and a bonding electrode sequentially superposed on the substrate. The bonding electrode is configured to be connected to an anode and a cathode of a micro inorganic light-emitting diode chip to be bonded. The display substrate further includes an elastic layer sandwiched between the bonding electrode and the insulation layer, the elastic layer having an orthographic projection on the substrate covering at least an orthographic projection of the bonding electrode on the substrate. The present disclosure provides a display panel, including the above display substrate, and further including a micro inorganic light-emitting diode chip having an anode and a cathode thereof connected to the bonding electrode on the display substrate.
LIGHT-EMITTING UNIT AND SURFACE-EMISSION LIGHT SOURCE
A light-emitting unit includes: a wiring board; a plurality of light-emitting elements provided on the wiring board and electrically coupled with a wire layer of the wiring board; a light reflecting member provided on the wiring board, the light reflecting member covering a lateral surface of each of the plurality of light-emitting elements; a light diffusing layer covering the plurality of light-emitting elements and the light reflecting member; a wavelength conversion layer located on or above the light diffusing layer; and a plurality of light reflecting layers located between the light diffusing layer and the wavelength conversion layer, each of the light reflecting layers being located above a corresponding one of the plurality of light-emitting elements. An upper surface of the light reflecting member has a recess which includes at least one concave surface, and there is a space between the concave surface and the light diffusing layer.
Light-emitting device having package structure with quantum dot material and manufacturing method thereof
A light-emitting device includes a light-emitting unit comprising a top surface and a first side surface; a light-transmitting layer covers the top surface and the first side surface; a wavelength conversion structure disposed on the light-transmitting layer; a protective layer covering the second side surface and the light-transmitting layer; and a reflective layer surrounding the protective layer. The wavelength conversion structure includes a wavelength conversion layer, a first barrier layer disposed on the wavelength conversion layer, a second barrier layer disposed under the wavelength conversion layer, the wavelength conversion layer, the first barrier layer, and the second barrier layer are collectively formed a second side surface.
Light emitting diode light source, manufacturing method thereof, backlight source and display device
The present invention provides a LED light source for increasing a light emitting angle and a manufacturing method thereof, as well as a backlight source and a display device. A LED light source comprises a circuit board, a LED which is directly fixed on and electrically connected to the circuit board, and a packaging piece for packaging a LED light emitting chip. A prism film with a prism micro-structure may be arranged between the packaging piece and the LED.
High brightness LEDs with non-specular nanostructured thin film reflectors
A light emitting device comprises a semiconductor diode structure configured to emit light, a substrate that is transparent to light emitted by the semiconductor diode structure, and a reflective nanostructured layer. The reflective nanostructured layer may be disposed on or adjacent to a bottom surface of the substrate and configured to reflect toward and through a side wall surface of the substrate light that is emitted by the semiconductor structure and incident on the reflective nanostructured layer at angles at or near perpendicular incidence. Alternatively, the reflective nanostructured layer may be disposed on or adjacent to at least one sidewall surface of the substrate and configured to reflect toward and through the bottom surface of the substrate light that is emitted by the semiconductor structure and incident on the reflective nanostructured layer at angles at or near perpendicular incidence.
Electronic device display with a backlight having light-emitting diodes and driver integrated circuits in an active area
A pixel array may be illuminated with backlight illumination from a backlight. The backlight may include a two-dimensional array of light-emitting diodes, with each light-emitting diode being placed in a respective cell. Different light-emitting diodes may have unique brightness magnitudes based on the content of the given display frame. Driver integrated circuits may control one or more associated light-emitting diodes to have a desired brightness level. The driver integrated circuits may be formed in an active area of the backlight. The driver integrated circuits may be arranged in groups that are daisy chained together. A digital signal (that includes information such as addressing information) may be propagated through the group of driver integrated circuits. To manage thermal performance of the backlight, the backlight may include a thermally conductive layer and/or a heat sink structure. To increase the efficiency of the backlight, the backlight may include one or more reflective layers.
LIGHT EMITTING DEVICE WITH BEAM SHAPING STRUCTURE AND MANUFACTURING METHOD OF THE SAME
A chip scale packaging (CSP) light emitting diode (LED) device includes a flip-chip LED semiconductor die and a beam shaping structure (BSS) to form a monochromatic CSP LED device. A photoluminescent structure can be disposed on the LED semiconductor die to form a phosphor-converted white-light CSP LED device. The BSS is fabricated by dispersing light scattering particles with concentration equal to or less than 30% by weight into a polymer resin material, and is disposed adjacent to the edge portion of the photoluminescent structure or the LED semiconductor die; or disposed remotely above the photoluminescent structure or the LED semiconductor die. The BSS disposed at the edge portion of the device can reduce the edge-emitting light of the device; while the BSS disposed at the top portion of the device can reduce the top-emitting light of the device, therefore shaping the radiation pattern and the viewing angle of the device.