A display device includes a substrate; a first electrode and a second electrode arranged to be spaced apart from each other on the substrate; a first insulating layer on the substrate; a light emitting element on the first insulating layer, located between the first electrode and the second electrode, and including a first end portion and a second end portion; a third electrode on the substrate and electrically connected to the first electrode and the first end portion; a fourth electrode on the substrate and electrically connected to the second electrode and the second end portion; a second insulating layer on the substrate and covering the light emitting element, the third electrode, and the fourth electrode; and a light diffusion layer on the second insulating layer and including a light diffusion particle.

A display device comprises a plurality of subpixels, each including a first electrode and a second electrode spaced apart from one another, and light-emitting elements electrically connected to the first electrode and the second electrode, a bank layer surrounding an area in which the light-emitting elements are provided, a thermal control layer provided in the area surrounded by the bank layer, to cover the light-emitting elements, an upper bank layer provided on the bank layer, and a color control layer provided on the thermal control layer, in an area surrounded by the upper bank layer, wherein the thermal control layer includes a resin layer, and a phase change particle dispersed in the resin layer and including a core including a phase change material, and a first shell around the core.

A display apparatus includes: a substrate; a light-emitting diode (“LED”) disposed above the substrate; a pixel-defining layer disposed above the substrate and including a concave portion which defines a space in which the LED is disposed; a light guider disposed in the space and between the LED and a first inner side surface of the concave portion; and a light blocker disposed above the pixel-defining layer to cover a top portion of the LED. The LED is disposed a second inner side surface of the concave portion, which is opposite to the first inner side surface, and spaced apart from a center of the concave portion, and the light guider guides light emitted from the LED to a region adjacent to the second inner side surface of the concave portion.

A light emitting device includes first and second light emitting elements, first and second wavelength conversion members, a reflecting member surrounding lateral surfaces of the first and second light emitting elements, and the lateral surfaces of the first and second wavelength conversion members, and a covering member continuously covering at least a top surface of the first wavelength conversion member, a top surface of the reflecting member disposed between the first and second wavelength conversion members, and a top surface of the second wavelength conversion member. The covering member contains at least one of a pigment and a dye so that a body color of the covering member is the same or a similar color as a body color of the wavelength conversion member.

A light emitting device includes: a mounting board; a plurality of light emitting elements disposed on the mounting board; a plurality of light transmissive members, each located on an upper surface of a respective one of the light emitting element; a first cover member located on or above the mounting board, the first cover member including: a first reflective material containing layer disposed between the light emitting elements and containing a first reflective material, and a light transmissive layer disposed between the light transmissive members; and a second cover member disposed around the light emitting elements.

In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with a radiation side, a first semiconductor layer of a first conductivity type, an active layer, a second semiconductor layer of a second conductivity type, and a rear side, which are arranged one above the other in this order. The active layer generates or absorbs primary electromagnetic radiation in the intended operation. Further, the optoelectronic semiconductor chip comprises a first contact structure and a second contact structure for electrically contacting the semiconductor layer sequence. The second contact structure is arranged on the rear side and is in electrical contact with the second semiconductor layer. The radiation side is configured for coupling in or coupling out primary radiation into or out of the semiconductor layer sequence. The rear side is structured and includes scattering structures configured to scatter and redirect the primary radiation.

A lighting device disclosed in an embodiment of the invention includes a substrate; a plurality of light sources spaced apart from each other at predetermined intervals on the substrate; a resin layer disposed on the substrate; a phosphor layer disposed on the resin layer and having a pattern layer including a concave portion and a convex portion formed on a surface facing the resin layer; and a diffusion layer disposed between the resin layer and the phosphor layer, wherein a thickness of the diffusion layer may be 10% or more and less than 50% of the maximum thickness of the phosphor layer.

A condensation-curable resin composition which contains: (A) an organosilicon compound containing a structural unit (i) represented by the following formula (i) and a structural unit (ii) represented by the following formula (ii), having a SiOH group at both ends of the molecular chain, and having a weight average molecular weight of 10,000 or more and 10,000,000 or less; and (B) an organometallic compound having three or more condensation-reactive groups. In formula (i), each R.sup.1 is independently a hydrocarbon group having 1 to 8 carbon atoms. In formula (ii), each R.sup.2 is independently a hydrocarbon group having 1 to 8 carbon atoms.

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A light source device includes: a driving circuit; a blue light emitting element made of a group III nitride semiconductor which has a light outgoing surface on a side opposite to a side with the driving circuit, is arranged on the driving circuit, and is electrically connected to the driving circuit; and a color conversion layer which is in contact with the light outgoing surface and converts a wavelength of light emitted from the light outgoing surface. The light outgoing surface is made of a group III nitride semiconductor.

A backlight structure is provided. The backlight structure includes a substrate, a light emitting diode array layer disposed on the substrate, a planarization layer disposed on the light emitting diode array layer, a composite medium layer disposed on the planarization layer, a metal gate line layer including a plurality of metal lines disposed on the composite medium layer, a fluorescent layer disposed on the metal gate line layer, and a diffusion layer disposed on the fluorescent layer, wherein the composite medium layer includes a first medium, a second medium, and a third medium, the second medium is interposed between the first medium and the third medium, and each of a refractive index of the first medium and a refractive index of the third medium is less than a refractive index of the second medium.