An optoelectronic light emitting device includes a pixel with a transparent or translucent carrier substrate, on which a semiconductor light emitting arrangement with at least one micro LED is arranged. The micro LED extends over a partial area of the pixel. The main radiation direction of the semiconductor light emitting arrangement is directed onto a backscattering surface element arranged behind the transparent carrier substrate in viewing direction. The semiconductor light emitting arrangement includes a beam shaping element.

A fabric-based item may include fabric layers and other layers of material. An array of electrical components may be mounted in the fabric-based item. The electrical components may be mounted to a support structure such as a flexible printed circuit. The flexible printed circuit may have a mesh shape formed from an array of openings. Serpentine flexible printed circuit segments may extend between the openings. The electrical components may be light-emitting diodes or other electrical devices. Polymer with light-scattering particles or other materials may cover the electrical components. The flexible printed circuit may be laminated between fabric layers or other layers of material in the fabric-based item.

A light emitting device includes: a mounting board; a plurality of light emitting elements disposed on the mounting board; a plurality of light transmissive members, each located on an upper surface of a respective one of the light emitting element; a first cover member located on or above the mounting board, the first cover member including: a first reflective material containing layer disposed between the light emitting elements and containing a first reflective material, and a light transmissive layer disposed between the light transmissive members; and a second cover member disposed around the light emitting elements.

An image-forming element includes a plurality of pixels, and projects and displays light emitted from the pixels. The image-forming element includes a light emitting element which includes a light source emitting the light and a mounting substrate on which a plurality of light emitting elements are provided on a mounting surface. A plurality of light sources which are segmented and included in at least one pixel are provided, and each of the light sources includes power supply electrodes provided on the same surface or a surface facing the mounting substrate. The mounting substrate includes a drive circuit which drives the light source and electrodes which are provided on the mounting surface and are electrically connected to the power supply electrodes of the light source. In each pixel, an area occupation ratio of the light source with respect to a region area of the pixel is 15% or more and 85% or less. The drive circuit includes a switch circuit which selectively short-circuits the electrodes electrically connected to the power supply electrodes of the light source with other electrodes or wirings in the drive circuit, or at least one non-volatile memory transistor for adjusting a light emission intensity of the light emitting element.

In one embodiment, the component comprises a light reflective housing. The housing comprises a matrix material of a light-transmittive plastic and particles of a glass ceramic embedded therein. The particles comprise a mean diameter of at least 5 μm. The particles comprise a glass matrix and crystallites. A refractive index difference between the glass matrix and the crystallites is at least 0.5, and the crystallites exhibit a mean diameter between 20 nm and 0.5 μm, inclusive.

A method for producing a conversion element comprising the following steps is described: providing a conversion layer having a matrix, in which phosphor particles are brought in, the phosphor particles comprising a host lattice having activator ions and being concentrated in a enrichment zone, providing a compensation layer having the matrix, in which compensation particles are brought in, which comprise the host lattice and are concentrated in a enrichment zone, and joining the conversion layer and the compensation layer in such a way that the enrichment zone of the conversion layer and the enrichment zone of the compensation layer are arranged symmetrically to one another with respect to a symmetry plane of the conversion element conversion element and a component are also specified.

A micro-LED device of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240). The device isolation region includes a metal plug (24) electrically coupled with the second semiconductor layer. This device includes a middle layer (300) which includes first contact electrodes (31) electrically coupled with the first semiconductor layer and a second contact electrode (32) coupled with the metal plug, and a backplane (400) provided on the middle layer, a bank layer (640) supported by the substrate, the bank layer defining a plurality of pixel openings (645) where the blue light radiated from the micro-LEDs respectively enters, and a red phosphor (64R), a green phosphor (64G) and a blue scatterer (64B) respectively provided in the plurality of pixel openings of the bank layer.

A micro-LED device of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240) located between the micro-LEDs. The device isolation region includes at least one metal plug (24) electrically coupled with the second semiconductor layer. This device includes a middle layer (300) which includes first contact electrodes (31) electrically coupled with the first semiconductor layer and a second contact electrode (32) coupled with the metal plug, a backplane (400) provided on the middle layer, a phosphor layer (600) capable of converting an electromagnetic wave radiated from each of the plurality of micro-LEDs to white light, and a color filter array (620) supported by the crystal growth substrate with the phosphor layer interposed therebetween, the color filter array being capable of selectively transmitting respective color components of the white light.

The present invention has an object of providing a wavelength conversion member and a light emitting device which have a high luminescence intensity. A wavelength conversion member 10 contains phosphor particles 2 in a matrix 1 and has a haze value of 0.7 to 0.999 in a visible wavelength range where an excitation spectrum of the phosphor particles 2 shows a spectral intensity of 5% or less of a maximum peak intensity.

A micro-LED device of the present disclosure includes a crystal growth substrate (100) having an upper surface covered with a mask layer (150), the mask layer having a plurality of openings (150G), and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240) located between the micro-LEDs. The device isolation region includes at least one metal plug (24) electrically coupled with the second semiconductor layer. This device includes a middle layer (300) which includes first contact electrodes (31) electrically coupled with the first semiconductor layer and a second contact electrode (32) coupled with the metal plug, and a backplane (400) provided on the middle layer.