Methods and apparatuses for signal attenuation is described. In an example, an attenuator can be configured to perform attenuation of signals for an integrated circuit. The attenuator can vary the attenuation with an ambient temperature. The attenuator can further adjust the attenuation based on a control signal applied to the attenuator. The control signal can be based on one or more of a temperature profile of the attenuator and a target gain variation of the integrated circuit.

Methods and apparatuses for signal attenuation is described. In an example, an attenuator can be configured to perform attenuation of signals for an integrated circuit. The attenuator can vary the attenuation with an ambient temperature. The attenuator can further adjust the attenuation based on a control signal applied to the attenuator. The control signal can be based on one or more of a temperature profile of the attenuator and a target gain variation of the integrated circuit.

A high-frequency coaxial attenuator includes a first coaxial cable portion that includes a first center conductor having a first length, and a first insulator of the first length formed around the first center conductor, wherein the first center conductor and the first insulator form a first diameter. A second coaxial cable portion is separated from the first coaxial cable portion by a gap. The second coaxial cable portion includes a second center conductor having a second length, and a second insulator of the second length formed around the second center conductor. A semiconductor material is deposited in the gap between the first coaxial cable portion and the second coaxial cable portion. The semiconductor material may be configured to provide an impedance of 500Ω and provides 20 dB of attenuation, and a 10:1 voltage divider based on a 50Ω input impedance of test equipment.

A dielectric having a first main surface and a second main surface facing each other, a main line provided on a side of the first main surface in contact with the dielectric, and a sub line provided on the side of the first main surface in contact with the dielectric are included, the dielectric has a first portion in contact with the main line and a second portion in contact with the sub line, and when the first main surface is viewed in a plan view, between the first portion and the second portion, a third portion having a relative dielectric constant changing along a direction intersecting with the main line and the sub line is located.

A dielectric having a first main surface and a second main surface facing each other, a main line provided on a side of the first main surface in contact with the dielectric, and a sub line provided on the side of the first main surface in contact with the dielectric are included, the dielectric has a first portion in contact with the main line and a second portion in contact with the sub line, and when the first main surface is viewed in a plan view, between the first portion and the second portion, a third portion having a relative dielectric constant changing along a direction intersecting with the main line and the sub line is located.

A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn or waveguide configured to apply the microwave power to a small area to perform spot curing or repair operations involving adhesives and composites. The spot curing may secure components in place for further handling, after which a thermal or oven treatment will cure the remaining adhesive to develop adequate strength for service. A related method is also disclosed.

The present disclosure provides a signal conditioner, an antenna device and a manufacturing method. The signal conditioner includes: a microstrip line including a first portion and a second portion; an insulating layer including a first insulating layer covering the first portion; at least one electrode; a liquid crystal layer covering the microstrip line, the insulating layer, and the at least one electrode; and a common electrode line. A first end of the first portion is connected to a first end of the second portion. A second end of the first portion is connected to a second end of the second portion. The at least one electrode includes a first electrode on a side of the first insulating layer facing away from the first portion. The common electrode line is on a side of the liquid crystal layer facing away from the microstrip line.

An attenuation apparatus and a test system. The attenuation apparatus includes a signal transmission channel and at least one radiation loss structure, wherein the signal transmission channel is configured to perform transmission attenuation on the energy of a transmitted signal; the radiation loss structure is arranged in the signal transmission channel; the radiation loss structure has a first operating state and a second operating state; when the radiation loss structure is in the first operating state, the radiation loss structure is configured to perform radiation attenuation on the energy of a signal transmitted by the signal transmission channel; and when the radiation loss structure is in the second operating state, the radiation loss structure is configured to perform transmission attenuation on the energy of the signal transmitted by the signal transmission channel.

Provided is a divider capable of accurately evaluating an object to be measured without being affected by impedance of a terminal to be measured of the object to be measured, and a signal generation system. There is provided a divider including an input terminal, a plurality of output terminals, a distribution unit that distributes a high frequency signal input to the input terminal and outputs signals obtained by the distribution, and a plurality of reflected wave blocking units that are respectively connected to a plurality of distribution unit outputs and attenuate reflected waves reflected by sides of the plurality of output terminals. The distribution unit includes the plurality of distribution unit outputs and outputs the high frequency signal distributed from the plurality of distribution unit outputs. Outputs from the plurality of reflected wave blocking units are output from the plurality of output terminals.

A semiconductor integrated circuit includes a first transmission power mode configured to transmit by a first power, and a second transmission power mode configured to transmit by a second power smaller than the first power, the semiconductor integrated circuit. The semiconductor integrated circuit includes a first transistor configured to receive and amplify a transmission signal in the second transmission power mode, and an attenuator including a resistor element and a switching element, provided between an output of the first transistor and an output terminal, configured to control attenuation of an output signal of the first transistor.