A directional coupler (1) includes a substrate (10), a main line (20) formed directly or indirectly on the substrate (10), sub-lines (21, 22 and 23) at least part of each of which is formed directly or indirectly on the substrate (10) along the main line (20), a switch (30) switching connections among end portions of the plurality of sub-lines (21, 22 and 23), and detection output terminals (FWD and REV) connected to the sub-line (21), wherein, when looking at the substrate (10) in plan, the end portions of the sub-lines (21, 22 and 23) are disposed on the opposite side to the detection output terminals (FWD and REV) relative to the main line (20), and the sub-line (21) to which the detection output terminals (FWD and REV) are connected is overlapped with or surrounded by the sub-lines (22 and 23).

A directional coupler (1) includes a substrate (10), a main line (20) formed directly or indirectly on the substrate (10), sub-lines (21, 22 and 23) at least part of each of which is formed directly or indirectly on the substrate (10) along the main line (20), a switch (30) switching connections among end portions of the plurality of sub-lines (21, 22 and 23), and detection output terminals (FWD and REV) connected to the sub-line (21), wherein, when looking at the substrate (10) in plan, the end portions of the sub-lines (21, 22 and 23) are disposed on the opposite side to the detection output terminals (FWD and REV) relative to the main line (20), and the sub-line (21) to which the detection output terminals (FWD and REV) are connected is overlapped with or surrounded by the sub-lines (22 and 23).

An impedance matching film 10a has a plurality of openings 11. The plurality of openings 11 are formed at equal intervals in a specific direction along main surfaces 10f of the impedance matching film 10a. The impedance matching film 10a has a sheet resistance of 300 to 700Ω/□. A size G of each opening 11 in the specific direction is 50 μm or more and 1000 μm or less. In the impedance matching film 10a, a cross-sectional resistance value R.sub.s is 1MΩ/m or more. The cross-sectional resistance value R.sub.s is determined by dividing a specific resistance of a material forming the impedance matching film 10a by a product of a thickness of the impedance matching film 10a and a distance between the nearest openings 11.

An impedance matching film 10a has a plurality of openings 11. The plurality of openings 11 are formed at equal intervals in a specific direction along main surfaces 10f of the impedance matching film 10a. The impedance matching film 10a has a sheet resistance of 300 to 700Ω/□. A size G of each opening 11 in the specific direction is 50 μm or more and 1000 μm or less. In the impedance matching film 10a, a cross-sectional resistance value R.sub.s is 1MΩ/m or more. The cross-sectional resistance value R.sub.s is determined by dividing a specific resistance of a material forming the impedance matching film 10a by a product of a thickness of the impedance matching film 10a and a distance between the nearest openings 11.

An impedance matching film 10 includes a plurality of domains 11. Each of the domains 11 has a plurality of openings 12 having different shapes. The pluralities of openings 12 are periodically arranged in a specific direction along main surfaces 10f of the impedance matching film 10. Each of sizes of the domains 11 in the specific direction is 50 μm or more.

An impedance matching film 10 includes a plurality of domains 11. Each of the domains 11 has a plurality of openings 12 having different shapes. The pluralities of openings 12 are periodically arranged in a specific direction along main surfaces 10f of the impedance matching film 10. Each of sizes of the domains 11 in the specific direction is 50 μm or more.

Provided herein are electric and magnetic field probes for measuring and mapping distributions of such fields on, for example, circuits, antennas and materials.

Provided herein are electric and magnetic field probes for measuring and mapping distributions of such fields on, for example, circuits, antennas and materials.

Disclosed herein is an apparatus that includes a memory, a processor, and a rectangular waveguide coupled to the memory and the processor so that the memory and the processor communicate with each other via the rectangular waveguide.

Disclosed herein is an apparatus that includes a memory, a processor, and a rectangular waveguide coupled to the memory and the processor so that the memory and the processor communicate with each other via the rectangular waveguide.