Waveguide interconnects for semiconductor packages are disclosed. An example semiconductor package includes a first semiconductor die, a second semiconductor die, and a substrate positioned between the first and second dies. The substrate includes a waveguide interconnect to provide a communication channel to carry an electromagnetic signal. The waveguide interconnect is defined by a plurality of through substrate vias (TSVs). The TSVs in a pattern around the at least the portion of the substrate to define a boundary of the communication channel.

Waveguide interconnects for semiconductor packages are disclosed. An example semiconductor package includes a first semiconductor die, a second semiconductor die, and a substrate positioned between the first and second dies. The substrate includes a waveguide interconnect to provide a communication channel to carry an electromagnetic signal. The waveguide interconnect is defined by a plurality of through substrate vias (TSVs). The TSVs in a pattern around the at least the portion of the substrate to define a boundary of the communication channel.

A leaky-wave antenna includes a substrate extending along an axis, and a dielectric waveguide extending along the axis and arranged in the substrate. The dielectric waveguide includes at least a top side, a bottom side, and opposite sides arranged between the top and bottom sides. A distance defined between the opposite sides varies along the axis for at least part of a length of the dielectric waveguide.

A leaky-wave antenna includes a substrate extending along an axis, and a dielectric waveguide extending along the axis and arranged in the substrate. The dielectric waveguide includes at least a top side, a bottom side, and opposite sides arranged between the top and bottom sides. A distance defined between the opposite sides varies along the axis for at least part of a length of the dielectric waveguide.

A dielectric waveguide including: a center dielectric A1; a dielectric layer A2 surrounding the center dielectric A1; and a dielectric layer A3 surrounding the dielectric layer A2, the center dielectric A1 including polytetrafluoroethylene, the center dielectric A1, the dielectric layer A2, and the dielectric layer A3 having relative permittivities at 25° C. and 6 GHz represented by ε.sub.A1, ε.sub.A2, and ε.sub.A3, respectively, ε.sub.A1, ε.sub.A2, and ε.sub.A3 satisfying the following: ε.sub.A1 is 2.20 or lower; ε.sub.A2 is 1.90 or lower; ε.sub.A3 is 1.55 or lower; and ε.sub.A1>ε.sub.A2>ε.sub.A3 is satisfied.

A dielectric waveguide including: a center dielectric A1; a dielectric layer A2 surrounding the center dielectric A1; and a dielectric layer A3 surrounding the dielectric layer A2, the center dielectric A1 including polytetrafluoroethylene, the center dielectric A1, the dielectric layer A2, and the dielectric layer A3 having relative permittivities at 25° C. and 6 GHz represented by ε.sub.A1, ε.sub.A2, and ε.sub.A3, respectively, ε.sub.A1, ε.sub.A2, and ε.sub.A3 satisfying the following: ε.sub.A1 is 2.20 or lower; ε.sub.A2 is 1.90 or lower; ε.sub.A3 is 1.55 or lower; and ε.sub.A1>ε.sub.A2>ε.sub.A3 is satisfied.

Embodiments described herein may be related to apparatuses, processes, and techniques related to contactless transmission within a package that combines radiating elements with vertical transitions in the package, in particular to a waveguide within a core of the package that is surrounded by a metal ring. A radiating element on one side of the substrate core and above the waveguide surrounded by the metal ring communicates with another radiating element on the other side of the substrate core and below the waveguide surrounded by the metal ring. Other embodiments may be described and/or claimed.

Embodiments described herein may be related to apparatuses, processes, and techniques related to contactless transmission within a package that combines radiating elements with vertical transitions in the package, in particular to a waveguide within a core of the package that is surrounded by a metal ring. A radiating element on one side of the substrate core and above the waveguide surrounded by the metal ring communicates with another radiating element on the other side of the substrate core and below the waveguide surrounded by the metal ring. Other embodiments may be described and/or claimed.

Embodiments may relate to a semiconductor package that includes a die and a package substrate. The package substrate may include one or more cavities that go through the package substrate from a first side of the package substrate that faces the die to a second side of the package substrate opposite the first side. The semiconductor package may further include a waveguide communicatively coupled with the die. The waveguide may extend through one of the one or more cavities such that the waveguide protrudes from the second side of the package substrate. Other embodiments may be described or claimed.

Apparatuses, methods, and systems for a housing structure for maintaining alignment between ceramic sections of a bandpass filter are disclosed. One housing structure includes an L-shaped outer structure, a plurality of flexure portions, wherein at least one of flexure portion extends from an end portion of each of extended arms of the L-shaped outer structure, wherein each flexure portion extends inward perpendicular to each of the extended end portion, and a plurality of reference datums, wherein at least one reference datum is located between an L-joint of the L-shaped outer structure, and a one of the flexure portions. The housing structure operates to receive a plurality of sections of a waveguide filter, wherein each section includes a plurality of planar surfaces, wherein the datums and the flexure portions are operative to maintain alignment of the sections of the waveguide filter relative to each other.