A filter device for routing microwave/RF signals is disclosed comprising an antenna port and at least one filter unit. Each filter unit comprises a receiving port, a transmitting port, an antenna node; a circulator comprising first, second, and third ports; and a receiver branch from the receiving port to the first port. The receiver branch comprises a receiver filter having first and second ports. Each filter unit also comprises a transmitter branch, comprising a transmitter filter having first and second ports. Moreover, the third port of the circulator is coupled to the antenna node. Each filter unit further comprises at least one of a receiver isolator coupled to the receiver filter and the circulator, and a transmitter isolator coupled to the transmitter filter and the circulator.

A filter device for routing microwave/RF signals is disclosed comprising an antenna port and at least one filter unit. Each filter unit comprises a receiving port, a transmitting port, an antenna node; a circulator comprising first, second, and third ports; and a receiver branch from the receiving port to the first port. The receiver branch comprises a receiver filter having first and second ports. Each filter unit also comprises a transmitter branch, comprising a transmitter filter having first and second ports. Moreover, the third port of the circulator is coupled to the antenna node. Each filter unit further comprises at least one of a receiver isolator coupled to the receiver filter and the circulator, and a transmitter isolator coupled to the transmitter filter and the circulator.

A radio frequency (“RF”) waveguide device fabricated by additive manufacturing is provided that includes a RF channel comprising a wall and a RF component comprising an unsupported span extending from the wall of the RF channel. The unsupported span can include at least one unsupported surface extending from the wall at an oblique angle relative to the wall. The RF component formed in this manner with additive manufacturing does not negatively impact the RF performance of the RF waveguide.

A superconducting quantum mechanical device includes first, second, third and fourth Josephson junctions connected in a bridge circuit having first, second and third resonance eigenmodes. The device also includes first and second capacitor pads. The first and second capacitor pads and the bridge circuit form a superconducting qubit having a resonance frequency corresponding to the first resonance eigenmode. The device further includes first and second resonator sections. The first and second resonator sections and the bridge circuit form a resonator having a resonance frequency corresponding to the second resonance eigenmode. The device also includes a source of magnetic flux arranged proximate the bridge circuit. The source of magnetic flux is configured to provide, during operation, a magnetic flux through the bridge circuit to cause coupling between the first, second and third resonance eigenmodes when the third resonance eigenmode is excited.

According to an embodiment, a high frequency integrated circuit includes a signal splitter, an attenuator, a first conductive element, and first to eighth switches. The signal splitter receives a high frequency signal at an input terminal, splits the high frequency signal to two lines, and outputs the signals split into the two lines from a first output terminal and a second output terminal. The attenuator has multiple amounts of attenuation values. In the first conductive element, a first amount of attenuation is set. The high frequency integrated circuit outputs a plurality of output signals having different gain values from the first high frequency output terminal and the second high frequency output terminal, respectively.

According to an embodiment, a high frequency integrated circuit includes a signal splitter, an attenuator, a first conductive element, and first to eighth switches. The signal splitter receives a high frequency signal at an input terminal, splits the high frequency signal to two lines, and outputs the signals split into the two lines from a first output terminal and a second output terminal. The attenuator has multiple amounts of attenuation values. In the first conductive element, a first amount of attenuation is set. The high frequency integrated circuit outputs a plurality of output signals having different gain values from the first high frequency output terminal and the second high frequency output terminal, respectively.

A solid-state direct cavity combiner (DCC) transmitter system for providing megawatts of power is featured. The system includes a resonant cavity including at least one high-power output transmission line, hundreds of high-power transistors each generating an amount of RF power input directly into the resonant cavity, and a plurality of modules each including at least one pair of high-power transistors differentially driving a transmission line and a coupling loop. Each said transmission line and coupling loop extends into the resonant cavity to match an impedance of each said high-power transistors of each said module to an impedance of said resonant cavity to electromagnetically couple power into the resonant cavity to provide the megawatts of power to the high-power output transmission line.

A solid-state direct cavity combiner (DCC) transmitter system for providing megawatts of power is featured. The system includes a resonant cavity including at least one high-power output transmission line, hundreds of high-power transistors each generating an amount of RF power input directly into the resonant cavity, and a plurality of modules each including at least one pair of high-power transistors differentially driving a transmission line and a coupling loop. Each said transmission line and coupling loop extends into the resonant cavity to match an impedance of each said high-power transistors of each said module to an impedance of said resonant cavity to electromagnetically couple power into the resonant cavity to provide the megawatts of power to the high-power output transmission line.

The radar system includes a split-block assembly comprising a first portion and a second portion. The first portion and the second portion form a seam, where the first portion has a top side opposite the seam and the second portion has a bottom side opposite the seam. The system includes at least one port located on a bottom side of the second portion. Additionally, the system includes radiating elements located on the top side of the first portion, wherein the radiating elements are arranged in a plurality of arrays. Yet further, the system includes a set of waveguides in the split-block assembly configured to couple each array to at least one port. Furthermore, the split-block assembly is made from a polymer and where at least the set of waveguides, the at least one port, and the plurality of radiating elements include metal on a surface of the polymer.

The radar system includes a split-block assembly comprising a first portion and a second portion. The first portion and the second portion form a seam, where the first portion has a top side opposite the seam and the second portion has a bottom side opposite the seam. The system includes at least one port located on a bottom side of the second portion. Additionally, the system includes radiating elements located on the top side of the first portion, wherein the radiating elements are arranged in a plurality of arrays. Yet further, the system includes a set of waveguides in the split-block assembly configured to couple each array to at least one port. Furthermore, the split-block assembly is made from a polymer and where at least the set of waveguides, the at least one port, and the plurality of radiating elements include metal on a surface of the polymer.