A redundant network system includes a compute node having a network interface card includes a node port. The redundant network system includes a primary switch having a primary switch component and a primary switch port coupled to the primary switch component. The redundant network system includes a secondary switch having a secondary switch component and a secondary switch port coupled to the secondary switch component. The redundant network system includes a cable assembly having a node connector coupled to the node port, a primary connector coupled to the primary switch port, and a secondary connector coupled to the secondary switch port. The cable assembly includes a signal splitting circuit between the node connector and the primary and secondary connectors. The cable assembly includes a first cable between the signal splitting circuit and the primary connector and a second cable between the signal splitting circuit and the secondary connector.

A redundant network system includes a compute node having a network interface card includes a node port. The redundant network system includes a primary switch having a primary switch component and a primary switch port coupled to the primary switch component. The redundant network system includes a secondary switch having a secondary switch component and a secondary switch port coupled to the secondary switch component. The redundant network system includes a cable assembly having a node connector coupled to the node port, a primary connector coupled to the primary switch port, and a secondary connector coupled to the secondary switch port. The cable assembly includes a signal splitting circuit between the node connector and the primary and secondary connectors. The cable assembly includes a first cable between the signal splitting circuit and the primary connector and a second cable between the signal splitting circuit and the secondary connector.

A common line is connected between a common terminal and a common connection node. A first filter has a first pass band. A second filter has a second pass band. At least one of a first condition and a second condition is satisfied. The first condition is that in the first pass band any one of a first impedance of the common line alone viewed from the common terminal (P10) and a second impedance of the first filter viewed from the common connection node includes an inductive property and the other includes a capacitive property. The second condition is that in the second pass band one of the first impedance and a third impedance of the second filter viewed from the common connection node includes an inductive property and the other includes a capacitive property.

An aspect relates to a signal power splitter/combiner including a first signal port; a first resistor; a first impedance transformer coupled in series with the first resistor between the first signal port and a first intermediate node; a second impedance transformer coupled between the first intermediate node and a second signal port; a third impedance transformer coupled between the first intermediate node and a third signal port; and a second resistor coupled between the second and third signal ports. The signal power splitter/combiner may further include a fourth impedance transformer coupled between the second impedance transformer and the second signal port, a fifth impedance transformer coupled between the third impedance transformer and the third signal port; and a third resistor coupled between a third intermediate nod.

An aspect relates to a signal power splitter/combiner including a first signal port; a first resistor; a first impedance transformer coupled in series with the first resistor between the first signal port and a first intermediate node; a second impedance transformer coupled between the first intermediate node and a second signal port; a third impedance transformer coupled between the first intermediate node and a third signal port; and a second resistor coupled between the second and third signal ports. The signal power splitter/combiner may further include a fourth impedance transformer coupled between the second impedance transformer and the second signal port, a fifth impedance transformer coupled between the third impedance transformer and the third signal port; and a third resistor coupled between a third intermediate nod.

A probe apparatus of a millimeter or submillimeter radio frequency band comprises transition layers having outermost layers on opposite surfaces of the probe apparatus. An internal transition cavity extends through the transition layers for guiding electromagnetic radiation within the probe apparatus. A probe layer disposed between the transition layers, the probe layer having a lateral transmission line for interacting with the electromagnetic radiation guided by the internal transmission cavity.

A probe apparatus of a millimeter or submillimeter radio frequency band comprises transition layers having outermost layers on opposite surfaces of the probe apparatus. An internal transition cavity extends through the transition layers for guiding electromagnetic radiation within the probe apparatus. A probe layer disposed between the transition layers, the probe layer having a lateral transmission line for interacting with the electromagnetic radiation guided by the internal transmission cavity.

A power switch including input and output lines of characteristic impedance Z0, and a switching area connected serially between the input and output lines, the switching area being formed by N (integer >2) parallel conducting branchesand i belonging to {1, . . . , N}, each conducting branch having, from input to output lines of the switch, an input line portion with characteristic impedance Zbei in series with a switching circuit in series with an output line portion with characteristic impedance Zbsi, the switching circuit configured, in a first state, to block passage of a signal between the input and output line portions of the conducting branch and, in a second state, to transmit a signal between the input line portion and the output line portion of the conducting branch with a maximum reflection coefficient of 0.316, each of the characteristic impedances Zbei and Zbsi ranging from 0.75*N*Z0 to 1.35*N*Z0.

Disclosed herein are waveguide interconnect bridges for integrated circuit (IC) structures, as well as related methods and devices. In some embodiments, a waveguide interconnect bridge may include a waveguide material and one or more wall cavities in the waveguide material. The waveguide interconnect bridge may communicatively couple two dies in an IC package.

Disclosed herein are waveguide interconnect bridges for integrated circuit (IC) structures, as well as related methods and devices. In some embodiments, a waveguide interconnect bridge may include a waveguide material and one or more wall cavities in the waveguide material. The waveguide interconnect bridge may communicatively couple two dies in an IC package.