Patent classifications
H01P7/06
Resonant waveguide cavity system for complex permittivity measurements
A method of using a resonant cavity for measuring a complex permittivity ε and identifying of a sample (solid or liquid) of microliter volume size includes using a network analyzer to measure over a defined millimeter wave frequency range, a first resonance frequency at a cavity resonance mode, and calculating an unloaded quality factor of an enclosed resonant waveguide cavity of a defined internal dimensions, placing a sample on a surface of a bottom wall of the resonant waveguide cavity and measure a second resonance frequency and calculating a loaded quality factor; determining, a resonance frequency shift Δf=(f.sub.s−f.sub.o), determining a complex permittivity ε of the sample according to the resonance frequency shift Δf, the loaded quality factor, the unloaded quality factor and the defined internal dimensions; and identifying the sample using a database through the complex permittivity ε.
Resonant waveguide cavity system for complex permittivity measurements
A method of using a resonant cavity for measuring a complex permittivity ε and identifying of a sample (solid or liquid) of microliter volume size includes using a network analyzer to measure over a defined millimeter wave frequency range, a first resonance frequency at a cavity resonance mode, and calculating an unloaded quality factor of an enclosed resonant waveguide cavity of a defined internal dimensions, placing a sample on a surface of a bottom wall of the resonant waveguide cavity and measure a second resonance frequency and calculating a loaded quality factor; determining, a resonance frequency shift Δf=(f.sub.s−f.sub.o), determining a complex permittivity ε of the sample according to the resonance frequency shift Δf, the loaded quality factor, the unloaded quality factor and the defined internal dimensions; and identifying the sample using a database through the complex permittivity ε.
Shell of electronic device and wave filter
A shell of an electronic device includes a base, two sidewalls, and a plurality of terminals. The base includes upper lateral and lower lateral surfaces opposite to each other. The two sidewalls are disposed at the upper lateral surface and are located separately at two opposite sides of the base. The two sidewalls are opposite to each other, with each sidewall having a surface that faces away from the base. The plurality of terminals is symmetrically arranged in order at the other opposite sides of the base and is embedded in the base. Each terminal includes an upper section and a lower section, with the upper section vertically extending upwards from the upper lateral surface, with the lower section horizontally extending outwards from the lower lateral surface, and with at least a portion of the lower section affixed flatly to the lower lateral surface.
Shell of electronic device and wave filter
A shell of an electronic device includes a base, two sidewalls, and a plurality of terminals. The base includes upper lateral and lower lateral surfaces opposite to each other. The two sidewalls are disposed at the upper lateral surface and are located separately at two opposite sides of the base. The two sidewalls are opposite to each other, with each sidewall having a surface that faces away from the base. The plurality of terminals is symmetrically arranged in order at the other opposite sides of the base and is embedded in the base. Each terminal includes an upper section and a lower section, with the upper section vertically extending upwards from the upper lateral surface, with the lower section horizontally extending outwards from the lower lateral surface, and with at least a portion of the lower section affixed flatly to the lower lateral surface.
MICROWAVE PLASMA PROCESSING APPARATUS AND MICROWAVE PLASMA PROCESSING METHOD
Disclosed is a microwave plasma processing apparatus including: a chamber that accommodates a workpiece; a microwave generating source that generates microwaves; a waveguide unit that guides the microwaves toward the chamber; a planar antenna made of a conductor having a plurality of slots that radiate the microwaves toward the chamber; a microwave-transmitting plate made of a dielectric material that constitutes a top wall of the chamber and transmits the microwaves radiated from the plurality of slots; a gas supply mechanism that supplies a gas into the chamber; and an exhaust mechanism that exhausts an atmosphere in the chamber. The planar antenna includes a plurality of slot groups each forming one unit including one or more of the slots, and the slots are formed so as to form an odd number of the slot groups equal to or more than three in a circumferential direction.
FILTER STRUCTURE AND FILTER DEVICE
A filter structure and a filter device provided by the present application relate to the technical field of electronic devices. The filter structure includes: a shielding component, which includes a first shielding layer and a second shielding layer, which are arranged opposite each other at an interval; at least two resonance components, which are arranged at an interval, wherein each resonance component includes a resonance column and a resonance disk connected to the resonance column, and the resonance column is located between the first shielding layer and the second shielding layer and is connected to the first shielding layer; and a coupling enhancement component, which is respectively arranged at intervals from the first shielding layer and the second shielding layer, and is respectively connected to at least two resonance columns, so as to increase a coupling coefficient between the at least two resonance columns.
FILTER STRUCTURE AND FILTER DEVICE
A filter structure and a filter device provided by the present application relate to the technical field of electronic devices. The filter structure includes: a shielding component, which includes a first shielding layer and a second shielding layer, which are arranged opposite each other at an interval; at least two resonance components, which are arranged at an interval, wherein each resonance component includes a resonance column and a resonance disk connected to the resonance column, and the resonance column is located between the first shielding layer and the second shielding layer and is connected to the first shielding layer; and a coupling enhancement component, which is respectively arranged at intervals from the first shielding layer and the second shielding layer, and is respectively connected to at least two resonance columns, so as to increase a coupling coefficient between the at least two resonance columns.
HOT HF COMPONENT WITH HF CAVITY
A hot HF component equipped with an HF cavity which is delimited by a jacket includes at least one internal protrusion, the jacket comprising at least one internal canal following the contour of its internal surface to allow the flow of a heat transport fluid intended to remove heat energy originating from the cavity.
Tunable resonance cavity
A resonance cavity comprising a first layer of dielectric material having a first dielectric constant and a first thickness, a second layer of dielectric material having a second dielectric constant different from the first dielectric constant and a second thickness, a metal patch arranged between the first and the second layer of dielectric material, and an electromagnetically shielded enclosure having at least one aperture, the electromagnetically shielded enclosure arranged to enclose part of the first and second layers of dielectric material and the metal patch.
Tunable resonance cavity
A resonance cavity comprising a first layer of dielectric material having a first dielectric constant and a first thickness, a second layer of dielectric material having a second dielectric constant different from the first dielectric constant and a second thickness, a metal patch arranged between the first and the second layer of dielectric material, and an electromagnetically shielded enclosure having at least one aperture, the electromagnetically shielded enclosure arranged to enclose part of the first and second layers of dielectric material and the metal patch.