A filter circuit includes an input node, an output node, a first filtering element and a second filtering element. The first filtering element has a first terminal coupled to the input node and a second terminal, and is configured to provide a first signal conducting path toward the second terminal for conducting a first signal received at the input node to the second terminal. The second filtering element has a first terminal coupled to the input node and a second terminal, and is configured to provide a second signal conducting path toward the output node for conducting a second signal received at the input node to the output node. The second terminal of the first filtering element and the second terminal of the second filtering element are open-circuit terminals.

A filter which stops the propagation of an electromagnetic wave of a predetermined frequency band in a signal line or a power supply line is provided. This filter is a conductor connected to the signal line or the power supply line. This conductor is configured to include a linear portion. The first portion of the linear portion with an end portion connected to the signal line or the power supply line has the first width, and the second portion different from the first portion of the linear portion has the second width different from the first width.

Disclosed are non-linear transmission lines using ferromagnetic materials to generate ferromagnetic resonance oscillations. In one aspect, a non-linear transmission line apparatus is disclosed. The apparatus includes an outer conductor having a first side and a second internally facing side, and an inner conductor positioned internal to the non-linear transmission line apparatus. The apparatus further includes a ferromagnetic material surrounding the inner conductor, wherein the ferromagnetic material comprises nanoparticles of an ε-polymorph of iron oxide expressed as ε—Fe.sub.2O.sub.3. The apparatus also includes a first dielectric material positioned between the outer conductor and the inner conductor, the dielectric material in contact with both the ferromagnetic material and with the second internally facing side of the outer conductor, wherein the outer conductor, the inner conductor, the dielectric material and the ferromagnetic material form the nonlinear transmission line.

Disclosed are non-linear transmission lines using ferromagnetic materials to generate ferromagnetic resonance oscillations. In one aspect, a non-linear transmission line apparatus is disclosed. The apparatus includes an outer conductor having a first side and a second internally facing side, and an inner conductor positioned internal to the non-linear transmission line apparatus. The apparatus further includes a ferromagnetic material surrounding the inner conductor, wherein the ferromagnetic material comprises nanoparticles of an ε-polymorph of iron oxide expressed as ε—Fe.sub.2O.sub.3. The apparatus also includes a first dielectric material positioned between the outer conductor and the inner conductor, the dielectric material in contact with both the ferromagnetic material and with the second internally facing side of the outer conductor, wherein the outer conductor, the inner conductor, the dielectric material and the ferromagnetic material form the nonlinear transmission line.

The present disclosure introduces wide tunable band filters. In one embodiment, a wide tunable band filter apparatus is described. The filter apparatus may include a microstrip patch having a plurality of symmetrical slots etched into the microstrip patch. A plurality of diodes may be coupled to the microstrip patch. Furthermore, two asymmetrical feed lines may be connected to the microstrip patch. Other embodiments are also described.

A device includes: a first chip including a qubit; and a second chip bonded to the first chip, the second chip including a substrate including first and second opposing surfaces, the first surface facing the first chip, wherein the second chip includes a single layer of superconductor material on the first surface of the substrate, the single layer of superconductor material including a first circuit element. The second chip further includes a second layer on the second surface of the substrate, the second layer including a second circuit element. The second chip further includes a through connector that extends from the first surface of the substrate to the second surface of the substrate and electrically connects a portion of the single layer of superconducting material to the second circuit element.

Provided is an element that can reduce a parasitic oscillation. An element used for an oscillation or a detection of a terahertz wave includes a resonance unit 108 including a first conductor 102, a second conductor 105, a dielectric 104 arranged between the first conductor and the second conductor, a first negative resistance element 101a and a second negative resistance element 101b mutually connected in parallel between the first conductor and the second conductor, a bias circuit 120 that supplies a bias voltage to each of the first negative resistance element and the second negative resistance element, and a line 103 that connects the bias circuit to the resonance unit, and the element is configured in a manner that a mutual injection locking in a positive phase between the first negative resistance element and the second negative resistance element is unstable, and a mutual injection locking in a reversed phase between the first negative resistance element and the second negative resistance element becomes stable.

Provided is an element that can reduce a parasitic oscillation. An element used for an oscillation or a detection of a terahertz wave includes a resonance unit 108 including a first conductor 102, a second conductor 105, a dielectric 104 arranged between the first conductor and the second conductor, a first negative resistance element 101a and a second negative resistance element 101b mutually connected in parallel between the first conductor and the second conductor, a bias circuit 120 that supplies a bias voltage to each of the first negative resistance element and the second negative resistance element, and a line 103 that connects the bias circuit to the resonance unit, and the element is configured in a manner that a mutual injection locking in a positive phase between the first negative resistance element and the second negative resistance element is unstable, and a mutual injection locking in a reversed phase between the first negative resistance element and the second negative resistance element becomes stable.

Nanopillar-based THz metamaterials, such as split ring resonator (SRR) MMs, utilizing displacement current in the dielectric medium between nanopillars that significantly increases energy storage in the MMs, leading to enhanced Q-factor. A metallic nanopillar array is designed in the form of a single gap (C-shape) SRR. Vacuum or dielectric materials of different permittivities are filled between the nanopillars to form nanoscale dielectric gaps. In other embodiments, formation of patterned nanowires using anodic aluminum oxide (AAO) templates with porous structures of different heights resulting from an initial step difference made by etching the aluminum (Al) thin film with a photoresist developer prior to the anodization process are disclosed.

Functionalized microscale 3D devices and methods of making the same. The 3D microdevice can be realized with the combination of top-down (lithographic) and bottom-up (origami-inspired self-assembly) processes. The origami-inspired self-assembly approach combined with a top-down process can realize 3D microscale polyhedral structures with metal/semiconductor materials patterned on dielectric materials. In some embodiments, the functionalized 3D microdevices include resonator-based passive sensors, i.e. split ring resonators (SRRs), on 3D, transparent, free-standing, dielectric media (Al.sub.2O.sub.3).