Patent classifications
H01P7/08
VECTOR SIGNAL GENERATOR OPERATING ON MICROWAVE FREQUENCIES, AND METHOD FOR GENERATING TIME-CONTROLLED VECTOR SIGNALS ON MICROWAVE FREQUENCIES
A vector signal generator is capable of operating on microwave frequencies. It comprises a microwave resonator, an output for coupling microwave photons out of said microwave resonator, and a Josephson junction or junction array coupled to the microwave resonator for emitting microwave signals into the microwave resonator. A biasing circuit is provided for applying a bias to the Josephson junction or junction array. A tunable attenuator is coupled to said microwave resonator.
THREE-DIMENSIONAL ISOTROPIC METAMATERIAL, METHOD OF PRODUCING THE SAME, AND TERAHERTZ REGION OPTICAL ELEMENT INCLUDING THE METAMATERIAL
A three-dimensional isotropic metamaterial including an aggregate of SRR-buried block pieces obtained by burying SRRs in a transparent resin cube, at random in a transparent resin member; a method of producing the same; and a terahertz region optical element.
QUANTUM PROCESSING UNIT COMPRISING ONE OR MORE SUPERCONDUCTING QUBITS BASED ON PHASE-BIASED LINEAR AND NON-LINEAR INDUCTIVE-ENERGY ELEMENTS
A quantum processing unit is disclosed. The quantum processing unit includes at least one superconducting qubit that is based on phase-biased linear and non-linear inductive-energy elements. A superconducting phase difference across the linear and non-linear inductive-energy elements is biased, for example, by an external magnetic field, such that quadratic potential energy terms of the linear and non-linear inductive-energy elements are cancelled at least partly. In a preferred embodiment, such cancellation is at least 30%. The partial cancellation of the quadratic potential energy terms makes it possible to implement a high-coherence high-anharmonicity superconducting qubit design.
ELECTROMAGNETIC BAND GAP STRUCTURE AND PACKAGE STRUCTURE
An electromagnetic bandgap structure includes a plurality of resonators. Each of the resonators includes a dielectric substrate, a patch conductor formed on an upper surface of the dielectric substrate, and a conductor layer formed on a lower surface of the dielectric substrate. The patch conductor and the conductor layer are electrically connected to each other by via holes penetrating the dielectric substrate. A plurality of long holes and are formed on the lower surface of the dielectric substrate. A long hole conductor layer is formed on an inner wall surface of the long holes and. The conductor layer and the long hole conductor layer are electrically connected to each other to thereby form an integral conductor surface. The via holes are electrically connected to the conductor surface in the long holes and.
High-order fully-reconfigurable balanced bandpass filters
High-order balanced bandpass filters that are continuously tunable in terms of frequency and bandwidth (BW) and can be intrinsically switched-off. The filters include multiple resonant sections cascaded between a differential RF input and a differential RF output. The resonant sections comprise at least one multi-resonant cell and at least one transmission pole cell. The multi-resonant cell includes four frequency tunable resonators, and is configured to create a frequency tunable pole at the center frequency of the filter, and two frequency tunable transmission zeroes at resonating frequencies of the resonators of the multi-resonant cell. The transmission pole cells each include two resistively-terminated frequency-tunable resonators configured to resonate at the center frequency of the filter.
High-order fully-reconfigurable balanced bandpass filters
High-order balanced bandpass filters that are continuously tunable in terms of frequency and bandwidth (BW) and can be intrinsically switched-off. The filters include multiple resonant sections cascaded between a differential RF input and a differential RF output. The resonant sections comprise at least one multi-resonant cell and at least one transmission pole cell. The multi-resonant cell includes four frequency tunable resonators, and is configured to create a frequency tunable pole at the center frequency of the filter, and two frequency tunable transmission zeroes at resonating frequencies of the resonators of the multi-resonant cell. The transmission pole cells each include two resistively-terminated frequency-tunable resonators configured to resonate at the center frequency of the filter.
Filter
The present invention provides a small-sized filter which has good characteristics. A filter according to the present invention comprises: a resonator which has a via electrode part that is formed within a dielectric substrate and a first strip line that is connected to one end of the via electrode part, while facing a first shielding conductor among a plurality of shielding conductors that are formed so as to surround the via electrode part; an input/output terminal which is coupled to a second shielding conductor among the plurality of shielding conductors; and a first capacitor electrode pattern which is coupled to the input/output terminal. The first capacitor electrode pattern is capacitively coupled to the first strip line or a second capacitor electrode pattern that is connected to the via electrode part.
Filter
The present invention provides a small-sized filter which has good characteristics. A filter according to the present invention comprises: a resonator which has a via electrode part that is formed within a dielectric substrate and a first strip line that is connected to one end of the via electrode part, while facing a first shielding conductor among a plurality of shielding conductors that are formed so as to surround the via electrode part; an input/output terminal which is coupled to a second shielding conductor among the plurality of shielding conductors; and a first capacitor electrode pattern which is coupled to the input/output terminal. The first capacitor electrode pattern is capacitively coupled to the first strip line or a second capacitor electrode pattern that is connected to the via electrode part.
SUPERCONDUCTING QUBIT MEMORY OF QUANTUM COMPUTER
A qubit memory of a quantum computer is provided. The qubit memory according to an embodiment includes a first readout unit, a first transmon, and a first data storage unit storing quantum information, and the first data storage unit includes a first superconducting waveguide layer, an insulating layer, and a superconductor layer sequentially stacked on a substrate. In one example, the first superconducting waveguide layer may include a superconducting resonator.
SUPERCONDUCTING QUBIT MEMORY OF QUANTUM COMPUTER
A qubit memory of a quantum computer is provided. The qubit memory according to an embodiment includes a first readout unit, a first transmon, and a first data storage unit storing quantum information, and the first data storage unit includes a first superconducting waveguide layer, an insulating layer, and a superconductor layer sequentially stacked on a substrate. In one example, the first superconducting waveguide layer may include a superconducting resonator.