A circuit assembly for cooling a quantum electrical device, use of said circuit assembly, a system and a method for cooling a quantum electric device are provided. The circuit assembly comprises a quantum electric device to be cooled, at least one normal-metal-insulator-superconductor (NIS) tunnel junction electrically connected to the quantum electric device and at least one superconductive lead for supplying a drive voltage V.sub.QCR for said at least one NIS tunnel junction. The quantum electric device is cooled when the voltage V.sub.QCR is supplied to at least one NIS tunnel junction, said voltage V.sub.QCR being equal to or below the voltage NΔ/e, where N=1 or N=2, N is the number of NIS tunnel junctions electrically coupled in series with the means for generating the voltage, Δ is the energy gap in the superconductor density of states, and e is the elementary charge.

A band pass filter (1) includes two resonators (8) and (10) including respectively linear conductors (9) and (11) disposed inside a dielectric substrate (2), and a pair of input-output lines (13) and (14) to which the two resonators (8) and (10) are connected in parallel. Both ends of the linear conductor (9) of the resonator (8) are left open. The resonator (10) includes vias (12A) and (12B) through which both ends of the linear conductor (11) of the resonator (10) are connected to a ground conductor (6) on a first surface (2A) of the dielectric substrate (2). The pair of input-output lines (13) and (14) include respectively vias (15A) and (15B) for connection to a ground conductor (7) that is disposed on a second surface (2B) of the dielectric substrate (2).

Tires formed of one or more tire plies are disclosed. In some implementations, tire plies may include a temperature sensor that may detect a temperature of a respective tire ply. The temperature sensor may include one or more split-ring resonators (SRRs), each having a resonance frequency that changes in response to one or more of a change in an elastomeric property or a change in the temperature of a respective one or more tire plies. In some aspects, the temperature sensor may include an electrically-conductive layer dielectrically separated from a respective one or more SRRs.

Tires formed of one or more tire plies are disclosed. In some implementations, tire plies may include a temperature sensor that may detect a temperature of a respective tire ply. The temperature sensor may include one or more split-ring resonators (SRRs), each having a resonance frequency that changes in response to one or more of a change in an elastomeric property or a change in the temperature of a respective one or more tire plies. In some aspects, the temperature sensor may include an electrically-conductive layer dielectrically separated from a respective one or more SRRs.

Improved loop-gap resonators applicable to Electron-Spin Resonance spectroscopy and to quantum computing employ interdigitated capacitor structures to dramatically increase the capacitance of the resonator, along with corresponding decreases in loop size to enable measurements of small-volume samples or individual quantum bits (qubits). The interdigitated-capacitor structures are designed to minimize parasitic inductance.

Improved loop-gap resonators applicable to Electron-Spin Resonance spectroscopy and to quantum computing employ interdigitated capacitor structures to dramatically increase the capacitance of the resonator, along with corresponding decreases in loop size to enable measurements of small-volume samples or individual quantum bits (qubits). The interdigitated-capacitor structures are designed to minimize parasitic inductance.

A ring resonator based T-shaped duplexer for use in communication systems, the T-shaped duplexer comprising a T-shaped microstrip duplexer body having a first rectangular-shaped body section and a second rectangular-shaped body section that extends from the first-rectangular shaped section in a perpendicular position relative to the first rectangular-shaped section, three connection ports including a first connection port disposed at an open end of the second rectangular-shaped body section, a second connection port disposed at one end of the first rectangular-shaped body section, and a third connection port disposed at another end of the first rectangular-shaped body section, and two bandpass filters, each bandpass filter comprising a ring resonator structure having a circular shape, an outer edge of the ring resonator structure being connected to the first rectangular-shaped body section of the T-shaped microstrip duplexer body, wherein each of the two bandpass filters creates an Electromagnetically Induced Transparency (EIT) window within a frequency absorption region of the bandpass filter to allow a signal to pass at a pre-tuned frequency band.

A resonator constructed with one or more Van der Waals materials. In some embodiments, a system includes such a resonator. The resonator may include: a capacitor; and an inductor, the capacitor including: a first conductive layer; an insulating layer, on the first conductive layer; and a second conductive layer on the insulating layer, the first conductive layer being composed of one or more layers of a first van der Waals material, the insulating layer being composed of one or more layers of a second van der Waals material, and the second conductive layer being composed of one or more layers of a third van der Waals material.

A three-dimensional (3D) filter and a fabrication method thereof are provided. The 3D filter includes a circuit board, a first ring-type resonator, a second ring-type resonator and a via structure. The circuit board includes a first circuit layer, a second circuit layer and a third circuit layer. The third circuit layer is located between the first circuit board and the second circuit board. The first ring-type resonator is disposed in the first circuit layer and has a first surrounding area corresponding to a first cut-off frequency band. The second ring-type resonator is disposed in the second circuit layer and has a second surrounding area corresponding to a second cut-off frequency band. The via structure passes through the first circuit layer, the second circuit layer and the third circuit layer, and is electrically connected to the first ring-type resonator and the second ring-type resonator.

A three-dimensional (3D) filter and a fabrication method thereof are provided. The 3D filter includes a circuit board, a first ring-type resonator, a second ring-type resonator and a via structure. The circuit board includes a first circuit layer, a second circuit layer and a third circuit layer. The third circuit layer is located between the first circuit board and the second circuit board. The first ring-type resonator is disposed in the first circuit layer and has a first surrounding area corresponding to a first cut-off frequency band. The second ring-type resonator is disposed in the second circuit layer and has a second surrounding area corresponding to a second cut-off frequency band. The via structure passes through the first circuit layer, the second circuit layer and the third circuit layer, and is electrically connected to the first ring-type resonator and the second ring-type resonator.