Patent classifications
H01P11/007
WAVEGUIDE FILTER SUITABLE FOR AN ADDITIVE MANUFACTURING METHOD
A waveguide filter having a core including an external face and internal faces defining a channel for filtering and guiding the waves. The channel includes several slots, each having a first and a second face. The first face is inclined in relation to the second face. A method for manufacturing the waveguide filter.
Ceramic filter using stepped impedance resonators having an inner cavity with a decreasing inner diameter provided by a plurality of steps
Disclosed are embodiments of ceramic radiofrequency filters advantageous as RF components. The ceramic filters can include a ceramic impedance resonator, wherein the inner diameter of the ceramic stepped impedance resonator can vary from one end to another end. The inner diameter can be designed to provide different impedances in the ceramic resonator.
Front-end module comprising front-end components and a substrate integrated waveguide filter formed on a printed circuit board
System, apparatuses and methods are disclosed which relate to the use of substrate integrated waveguide technology in front-end modules. An example circuit card assembly for use as a cellular base station front-end is disclosed which includes at least one component printed circuit board (PCB) layer having front-end module hardware components and at least one filter PCB layer including at least one substrate integrated waveguide (SIW) filter.
RF Filter for Use at 5G Frequencies
An RF filter comprising a resonator element and a polymer composition is provided. The polymer composition contains an aromatic polymer and has a melting temperature of about 240° C. or more. The polymer composition exhibits a dielectric constant of about 5 or less and dissipation factor of about 0.05 or less at a frequency of 10 GHz.
Reduced kapitza resistance microwave filter for cryogenic environments
An architecture for, and techniques for fabricating, a thermal decoupling device are provided. In some embodiments, thermal decoupling device can be included in a thermally decoupled cryogenic microwave filter. In some embodiments, the thermal decoupling device can comprise a dielectric material and a conductive line. The dielectric material can comprise a first channel that is separated from a second channel by a wall of the dielectric material. The conductive line can comprise a first segment and a second segment that are separated by the wall. The wall can facilitate propagation of a microwave signal between the first segment and the second segment and can reduce heat flow between the first segment and the second segment of the conductive line.
FILTER MANUFACTURING METHOD AND FILTER MANUFACTURED BY THE METHOD
A filter manufacturing method and a filter manufactured by the filter manufacturing method are disclosed. The filter manufacturing method includes designating a use mode in a resonator to a first resonance mode, in response to designating to the first resonance mode, setting a band selected from a designated first frequency band to a passband in the resonator, switching the use mode in the resonator from the first resonance mode to a second resonator mode, in response to switching to the second resonance mode, setting a band selected from the first frequency band except for the passband to a stopband in the resonator, and manufacturing a primary filter including the resonator to which the passband and the stopband are set.
SYSTEM FOR CROSSTALK REJECTING TOPOLOGY
A system for preventing crosstalk between adjacent channels comprises a crossover connector positioned along a length of one channel such that a portion of a positive trace for a first channel is positioned adjacent to a positive trace of a positive trace of an adjacent channel. The position of the crossover connector is based on preventing crosstalk and crossover connectors on adjacent channels may be staggered to further prevent crosstalk. A crossover connector may be based on capacitors or resistors to prevent crosstalk.
CERAMIC FILTERS USING STEPPED IMPEDANCE RESONATORS
Disclosed are embodiments of ceramic radiofrequency filters advantageous as RF components. The ceramic filters can include a ceramic impedance resonator, wherein the inner diameter of the ceramic stepped impedance resonator can vary from one end to another end. The inner diameter can be designed to provide different impedances in the ceramic resonator.
High Frequency, Surface Mountable Microstrip Band Pass Filter
A high frequency, stripline filter may have a bottom surface for mounting to a mounting surface. The filter may include a monolithic base substrate having a top surface and a plurality of thin-film microstrips, including a first thin-film microstrip and a second thin-film microstrip, formed over the top surface of the substrate. Each of the plurality of thin-film microstrips may have a first arm, a second arm parallel to the first arm, and a base portion connected with the first and second arms. A port may be exposed along the bottom surface of the filter. A conductive path may include a via formed in the substrate. The conductive path may electrically connect the first thin-film microstrip with the port on the bottom surface of the filter. The filter may exhibit an insertion loss that is greater than −3.5 dB at a frequency that is greater than about 15 GHz.
RF CIRCUIT AND ENCLOSURE HAVING A MICROMACHINED INTERIOR USING SEMICONDUCTOR FABRICATION
An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.