Patent classifications
H01S1/02
COHERENT TERAHERTZ MAGNON LASER AND COHERENT TERAHERTZ COMMUNICATION SYSTEM
An apparatus for generation of coherent terahertz radiation is provided. In one example, the apparatus includes one or more multilayer tunable microcolumns. In turn, a multilayer tunable microcolumn can include a substrate, a bottom electrode, a bottom layer of a ferromagnetic material further comprising a magnon gain medium (MGM) coupled to the bottom electrode, a tunnel junction coupled to the ferromagnetic material, a spin injector coupled to the tunnel junction, a pinning layer coupled to the spin injector, a reference layer coupled to the pinning layer and a top electrode. In one example, a containment cavity encloses at least one of the multilayer tunable microcolumns. In one example, a storage cavity encloses the containment cavity.
Terahertz-wave detector and terahertz unit
One aspect of the present disclosure provides a terahertz-wave detector including a semiconductor substrate, an active element formed on the semiconductor substrate and a first resistive portion electrically connected in parallel with the active element.
Terahertz-wave detector and terahertz unit
One aspect of the present disclosure provides a terahertz-wave detector including a semiconductor substrate, an active element formed on the semiconductor substrate and a first resistive portion electrically connected in parallel with the active element.
Room temperature masing using spin-defect centres
Masing at room temperature is achieved by an apparatus and method that utilize a microwave cavity which exhibits a resonance of sufficiently high Q-factor for maser oscillation, and a resonator structure comprising a masing medium located within a resonant element. The masing medium comprises spin-defect centres. The resonator structure is disposed within the microwave cavity. A magnetic field is applied across the masing medium. An input of microwave radiation to be amplified is coupled to the resonator structure. An optical pump pumps the masing medium, thereby causing stimulated emission of microwave photons. The microwave cavity has an effective magnetic mode volume matching the volume of the masing medium.
Room temperature masing using spin-defect centres
Masing at room temperature is achieved by an apparatus and method that utilize a microwave cavity which exhibits a resonance of sufficiently high Q-factor for maser oscillation, and a resonator structure comprising a masing medium located within a resonant element. The masing medium comprises spin-defect centres. The resonator structure is disposed within the microwave cavity. A magnetic field is applied across the masing medium. An input of microwave radiation to be amplified is coupled to the resonator structure. An optical pump pumps the masing medium, thereby causing stimulated emission of microwave photons. The microwave cavity has an effective magnetic mode volume matching the volume of the masing medium.
ROOM TEMPERATURE MASING USING SPIN-DEFECT CENTRES
Masing at room temperature is achieved by an apparatus and method that utilize a microwave cavity which exhibits a resonance of sufficiently high Q-factor for maser oscillation, and a resonator structure comprising a masing medium located within a resonant element. The masing medium comprises spin-defect centres. The resonator structure is disposed within the microwave cavity. A magnetic field is applied across the masing medium. An input of microwave radiation to be amplified is coupled to the resonator structure. An optical pump pumps the masing medium, thereby causing stimulated emission of microwave photons. The microwave cavity has an effective magnetic mode volume matching the volume of the masing medium.
ROOM TEMPERATURE MASING USING SPIN-DEFECT CENTRES
Masing at room temperature is achieved by an apparatus and method that utilize a microwave cavity which exhibits a resonance of sufficiently high Q-factor for maser oscillation, and a resonator structure comprising a masing medium located within a resonant element. The masing medium comprises spin-defect centres. The resonator structure is disposed within the microwave cavity. A magnetic field is applied across the masing medium. An input of microwave radiation to be amplified is coupled to the resonator structure. An optical pump pumps the masing medium, thereby causing stimulated emission of microwave photons. The microwave cavity has an effective magnetic mode volume matching the volume of the masing medium.
Terahertz lasers and terahertz extraction
A frequency electromagnetic radiation generation system including: a non linear crystal producing THz frequency electromagnetic radiation; a fundamental beam that interacts with the non linear crystal thereby emitting a THz frequency electromagnetic radiation emission; a silicon intermediary coupled to the non linear crystal for output channeling the THz frequency electromagnetic radiation emission to an output environment; the system utilising a fundamental beam which has a photon energy below the bandgap energy of silicon.
Terahertz lasers and terahertz extraction
A frequency electromagnetic radiation generation system including: a non linear crystal producing THz frequency electromagnetic radiation; a fundamental beam that interacts with the non linear crystal thereby emitting a THz frequency electromagnetic radiation emission; a silicon intermediary coupled to the non linear crystal for output channeling the THz frequency electromagnetic radiation emission to an output environment; the system utilising a fundamental beam which has a photon energy below the bandgap energy of silicon.
TECHNIQUE OF HIGH-SPEED MAGNETIC RECORDING BASED ON MANIPULATING PINNING LAYER IN MAGNETIC TUNNEL JUNCTION-BASED MEMORY BY USING TERAHERTZ MAGNON LASER
An apparatus for novel technique of high-speed magnetic recording based on manipulating pinning layer in magnetic tunnel junction-based memory by using terahertz magnon laser is provided. The apparatus comprises a terahertz writing head configured to generate a tunable terahertz writing signal and a memory cell including a spacer that comprises a thickness configured based on Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. The memory cell comprises two separate memory states: a first binary state and a second binary state; wherein the first binary memory state corresponds to a ferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a first thickness value of the spacer; and wherein the second binary memory state corresponds to an antiferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a second thickness value of the spacer. The thickness of the spacer is manipulated by the tunable terahertz writing signal.