A closely spaced emitter array may include a first emitter comprising a first plurality of structures and a second emitter, adjacent to the first emitter, comprising a second plurality of structures. The first emitter and the second emitter may be configured in the closely spaced emitter array such that different types of structures between the first plurality of structures and the second plurality of structures do not overlap while maintaining close spacing between the first emitter and the second emitter.

A vertical cavity surface emitting laser according to an aspect of the present disclosure includes a substrate having a main surface including a III-V group compound semiconductor and a semiconductor structure having a post disposed on the main surface. The main surface has an off-angle greater than 2° with respect to a plane. The post includes an active layer and a current confinement layer that are arranged in a first direction intersecting the main surface. The current confinement layer includes an aperture portion and an insulation portion surrounding the aperture portion. The current confinement layer has a uniaxially symmetric shape or an asymmetric shape in a section perpendicular to the first direction.

A solid-state LIDAR system includes a plurality of lasers, each generating an optical beam having a FOV when energized. A plurality of detectors is positioned in an optical path of the optical beams generated by the plurality of lasers. A FOV of at least one of the plurality of optical beams generated by the plurality of lasers overlaps a FOV of at least two of the plurality of detectors. A controller is configured to generate bias signals at a plurality of laser control outputs that energize a selected group of the plurality of lasers in a predetermined time sequence and is configured to detect a predetermined sequence of detector signals generated by the plurality of detectors.

A method is for making a QCL having an InP spacer within a laser core, the QCL to provide a CW output in a high quality beam. The method may include selectively setting parameters for the QCL. The parameters may include a number of the InP spacer, a thickness for each InP spacer, a number of stages in the laser core, and a dopant concentration value in the laser core. The method may include forming the QCL based upon the parameters so that a figure of merit comprises a greatest value for a fundamental mode of operation for the QCL.

An inspection method for inspecting a semiconductor laser device integrated with a semiconductor laser, an electroabsorption modulator for input the output of the semiconductor laser, and a photodetector for detecting intensity of part of the laser light output from the semiconductor laser includes a step of acquiring a transverse-mode light output characteristic that is a relationship between an injection current to the semiconductor laser and the output of the photodetector; a step of applying a reverse bias voltage to the electroabsorption modulator and acquiring a total light output characteristic that is a relationship between the injection current to the semiconductor laser and a photocurrent output from the electroabsorption modulator; and a step of comparing the total light output characteristic with the transverse-mode light output characteristic, thereby to determine whether or not the semiconductor laser device under inspection is abnormal in the transverse mode.

Visible spectrum quantum dot (QD) light emitting sources integrable with integrated silicon photonics include a plurality of epitaxially grown InP QDs within an active region. The light emitting sources include light emitting diodes (LEDs) and semiconductor lasers.

An optical instrument for determining a wavelength of light generated by a light source. The optical instrument may include a signal generator for generating a driving signal, a tunable optical filter device configured to receive the driving signal, the tunable optical filter device configured to diffract the light generated by the light source based on the driving signal, an optical detector device configured to detect a timing of maximum diffraction of light diffracted by the tunable optical filter device, and an analyzer configured to determine the wavelength of the light based the timing of maximum diffraction.

A system and method of providing a deformed FAC Lens to a multi-emitter diode bar laser system comprised of a lens holder and FAC lens wherein the FAC Lens is deformed so as to offset or compensate for the inherent smile properties present in a multi-emitter diode bar.

An internal laser component of an optical device comprises: a waveguide that defines a guided mode of a first optical wave characterized by a first propagation constant associated with a first effective refractive index. An optical antenna grating comprises: a waveguide that defines a guided mode of a second optical wave characterized by a second propagation constant associated with a second effective refractive index, and a grating structure configured to emit a portion of the second optical wave in a selected direction. The internal laser component and the optical antenna grating are configured to provide a relationship between the first effective refractive index and the second effective refractive index such that the selected direction is substantially insensitive to a change in a temperature of a thermal environment in which the internal laser component and the optical antenna grating are thermally coupled.

A light emitting element (semiconductor laser element) includes a multilayer structure in which a substrate, semiconductor layers to, an insulating layer, and a metal layer are stacked in order. The light emitting element includes a plurality of light emitting portions each of which emits a laser beam. The plurality of light emitting portions each include a ridge (ridge waveguide). The distance from a specific position in an active region in at least one of the light emitting portions to an inner surface of the metal layer is different from that in another of the light emitting portions.