An information processing device includes a processor and a storage device. The processor is configured to acquire data for each parameter provided from each of a light source device which generates pulse light and an exposure apparatus which performs exposure on a wafer with the pulse light output from the light source device, and time data associated with the data; to perform classification, based on the acquired data and time data, for each record of the data associated with same time data for distinguishing whether being data during exposure in which the wafer is irradiated with the pulse light or being data during non-exposure; to associate attribute information indicating an attribute according to the classification with each of the records; to cause the storage device to store the data and the time data associated with the attribute information; and to generate a chart using data read from the storage device.

A laser device includes a laser oscillator configured to emit a laser beam, and an optical unit configured to receive the laser beam and emit the laser beam outside. The optical unit includes: a partially transmissive mirror configured to reflect a part of the laser beam toward the outside and transmit a remaining part of the laser beam; a diffusion plate configured to diffuse the laser beam which has passed through the partially transmissive mirror and deflect the laser beam in a predetermined direction, at a predetermined diffusion angle; and a photodiode configured to receive the laser beam deflected by the diffusion plate, and output an electric signal. The laser device is configured such that deviation of an optical axis of the laser beam is monitored based on the electric signal of the photodiode.

A semiconductor laser including a waveguide having a core, a confinement layer to bury the core, and a metallization layer. The core includes an active core region. The confinement layer surrounds the core and includes a first confinement layer between the core and the semiconductor substrate below the core, a second confinement layer above the core, and a third confinement layer to either or both sides of the core. The metallization layer is located above the confinement layers and include a first metallization layer and a second metallization layer. The first metallization layer is in direct contact with the second confinement layer and the third confinement layer, while the second metallization layer is disposed above the first layer. The first metallization layer is tuned to have a plasmon resonance corresponding to a higher order mode with high loss.

A method for a calibration of at least one laser diode, in particular at least one laser diode of a laser projection device. The at least one laser diode is calibrated on the basis of a comparison of at least one currently acquired characteristic value of the at least one laser diode with at least one characteristic value, stored in at least one database, of a model laser diode that is at least substantially identical in construction to the at least one laser diode.

Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

A system is proposed for continuously monitoring the integrity of a transmission fiber coupled to a laser source and immediately shutting down the laser source upon recognition of any type of cut, break or disconnect along the transmission fiber. A pair of monitoring photodiodes is included with the laser source and used to look at the ratio of reflected light to transmitted light, shutting down the laser if the ratio exceeds a given threshold. If a break is present, the power of the reflected light will be higher than normal, where a defined threshold is used to determine of the calculated intensity is indicative of a break. By using measurements performed in terms of decibels, the monitoring system needs only to take the difference in intensities to generate the reflection/transmission ratio output.

Aspects described herein include a method of fabricating an optical component. The method comprises electrically coupling different laser channels of a laser die to different electrical leads, testing a respective optical coupling of each of the different laser channels, optically aligning an optical fiber with a first laser channel of the different laser channels having the greatest optical coupling, and designating a second laser channel of the different laser channels as a heater element for the first laser channel.

The present invention is directed to wearable display technologies. More specifically, various embodiments of the present invention provide wearable augmented reality glasses incorporating projection display systems where one or more laser diodes are used as light source for illustrating images with optical delivery to the eye using transparent waveguides. In one set of embodiments, the present invention provides wearable augmented reality glasses incorporating projector systems that utilize transparent waveguides and blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides wearable augmented reality glasses incorporating projection systems having digital lighting processing engines illuminated by blue and/or green laser devices with optical delivery to the eye using transparent waveguides. In one embodiment, the present invention provides wearable augmented reality glasses incorporating a 3D display system with optical delivery to the eye using transparent waveguides. There are other embodiments as well.

In a method of manufacturing surface-emitting lasers, a substrate having a major surface including a plurality of areas each provided with a plurality of surface-emitting lasers is prepared. A first laser beam emitted when a direct-current voltage is applied to each of an n number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, n being an integer of 2 or greater. A second laser beam emitted when an alternating-current voltage is applied to each of an m number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, m being a natural number smaller than n. Whether the n number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the first laser beam. Whether the m number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the second laser beam.