A laser source is presented a plurality of unit cells of a selected number of partially physically coupled lasing units arranged within a plane and configured to form a topological structure, wherein each of the lasing units is configured to emit radiation component substantially perpendicular to said plane, said plurality of the unit cells comprising at least a first sub-array of the unit cells located in a first region interfacing with a second region of a different type than said first region, thereby defining an arrangement of optically coupled lasing units along an interface region between the first and second adjacent regions, forming at least one topological state along a topological path within said interface region.

A discrete wavelength tunable laser having an optical cavity which comprises: a reflective semiconductor optical amplifier (SOA); a demultiplexer (Demux) having a single input and a plurality of outputs, the Demux configured to receive the output of the SOA and to produce a plurality of fixed spectral passbands within the gain bandwidth of the SOA; one or more tunable distributed Bragg reflector(s) (DBR(s)) arranged to receive the outputs of the Demux, each tunable DBR configured to select a reflective spectral band within the gain bandwidth of the SOA upon application of a bias current; wherein the SOA forms the back end mirror of the optical cavity; the one or more tunable DBRs form the front end mirror of the optical cavity; and wherein the lasing channel of the discrete wavelength tunable laser is chosen by the overlap of the selected reflective spectral band of one of the one or more tunable DBRs with a fixed spectral passband of the Demux.

Embodiments of the present disclosure relate to a projector that is structured to be incorporated into a small form factor electronic device. In some embodiments, the projector is integrated in a depth camera assembly used for eye tracking and/or determining depth of objects in a local area. The projector includes a vertical cavity surface emitting laser (VCSEL) array and a substrate coupled to the VCSEL array. The VCSEL array is a bottom emitting VCSEL array formed with one or more VCSELs. The substrate includes a plurality of optical features to generate one or more SL patterns from the lights that are emitted from the VCSELs.

A manipulator device such as a robot arm that is capable of increasing manufacturing throughput for additively manufactured parts, and allows for the manipulation of parts that would be difficult or impossible for a human to move is described. The manipulator can grasp various permanent or temporary additively manufactured manipulation points on a part to enable repositioning or maneuvering of the part.

A light emitting device includes: a base comprising a first wiring, a second wiring, and a third wiring; a first semiconductor laser element electrically connected to the first wiring and the second wiring, at an upper surface side of the base; a second semiconductor laser element electrically connected to the second wiring and the third wiring, at the upper surface side of the base; and a base cap fixed to the base such that the first semiconductor laser element and the second semiconductor laser element are enclosed in a space defined by the base and the base cap. The first semiconductor laser element and the second semiconductor laser element are connected in series. A portion of each of the first, second, and third wirings is exposed at the upper surface of the base at locations outside of the space defined by the base and the base cap.

Provided are a structured light projector that generates and projects structured light, and an electronic apparatus including the structured light projector. The structured light projector includes an illuminator configured to emit light, a pattern mask configured to form structured light by partially transmitting and partially blocking incident light from the illuminator based on a pattern of the pattern mask, and a lens configured to project the structured light. The illuminator includes a plurality of illumination areas respectively facing a plurality of areas of the pattern mask, wherein intensities of lights respectively emitted by the plurality of illumination areas are different from one other.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A disclosed semiconductor laser module includes a semiconductor laser device; a waveguide optical function device that has an incidence end on which laser light emitted from the semiconductor laser device is incident and that guides the incident light; and a protrusion that is provided on an extension line of a light path of the laser light emitted from the semiconductor laser device, the extension line extending beyond the incidence end.

A system includes multiple laser diode modules that are spatially separated and configured to generate multiple optical beams that propagate at angles relative to each other. The system also includes an optical element having at least one entrance surface and at least one exit surface. The optical element is configured to receive the optical beams at the at least one entrance surface and output each optical beam through the at least one exit surface such that the output optical beams are closely spaced, substantially the same size, and substantially parallel to each other at a common distance downstream from the optical element, and the optical beams all share a common downstream image plane.

A semiconductor light emitter includes a substrate, a semiconductor multilayer structure including a light emission unit that emits light in an oblique direction with respect to the substrate in an emission region in a longitudinal direction and a lateral direction orthogonal to the longitudinal direction, and a shaping optical system that shapes a luminous flux emitted from the light emission unit, in which a lens closest to the light emission unit in the shaping optical system is a cylindrical lens having positive power in the lateral direction, a front major plane of the cylindrical lens is parallel to the light emission unit and a generatrix direction of the cylindrical lens is parallel to the longitudinal direction, and the following conditional equation (1) is satisfied in a case where a distance from the light emission unit to a light incident surface of the cylindrical lens is D, a distance from the light incident surface to the front major plane of the cylindrical lens is HA, and a focal length of the cylindrical lens is f,

D<f−HA  (1).