A vehicle component, and a method and tool for forming the component are provided. First and second tools with first and second surfaces, respectively, are provided. The first tool is translated along a first axis towards the second tool such that the first and second surfaces cooperate to define a mold cavity configured to form an accessory mount feature with an aperture. The second surface is configured to form an integrated rib extending outwardly from an upper surface of the mount feature to a planar bearing surface surrounding the aperture with the planar bearing surface oriented at an acute angle relative to the upper surface. The first axis is substantially parallel to the upper surface.

The light source unit includes a base provided with an opening, a support member fixed to the base at the opening, and a light source assembly fixed to the support member at the opening. The light source assembly includes a light source emitting laser light, a lens disposed on an optical axis of the laser light, and a holding member holding the light source and the lens. The support member has a convex receiving surface extending along the spherical surface so as to surround the optical axis when viewed from a direction parallel to the optical axis. The light source assembly is fixed to the support member by coupling the holding member to the receiving surface at a contact portion with the receiving surface. The receiving surface has a portion located on a side away from the optical axis with respect to a coupling part with the holding member.

In order to provide a QCL element operating in the near-infrared wavelength range, the present disclosure provides a quantum cascade laser element 1000 having a semiconductor superlattice structure (QCL structure 100) sandwiched between a pair of conductive sections 20 and 30. The semiconductor superlattice structure serves as an active region that emits electromagnetic waves. The active region has a plurality of unit structures 10U that are stacked on top of each other. Each unit structure includes four well layers 10W1-10W4 of a composition of Al.sub.xGa.sub.1−xN, separated from each other by barrier layers 10B1-10B5 of a composition of Al.sub.yGa.sub.1−yN with 0≤x<y≤1. Both of the conductive sections in the pair of conductive sections have a refractive index lower than that of the active region in which doped TCO inserted as a key role.

In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

A method is disclosed for mounting and cooling a circuit component having aplurality of contacts. The method comprises mounting the circuit component on a rigid substrate of a thermally conductive and electrically insulating material with a circuit board arranged between the circuit component and the substrate. The circuit board, which has a flexible base and carries conductive traces that terminate in contact pads, is secured to the rigid substrate with at least some of the contact pads on the circuit board disposed on the side of the circuit board facing the rigid substrate, at least some of the latter contact pads being bonded to the substrate. To establish both an electrical and a thermal connection between the contacts of the circuit component and the contact pads bonded to the substrate, blind holes are formed in the flexible base of the circuit board, each hole terminating at a respective one of the contact pads bonded to the substrate. The side of the contact pads exposed by the holes is plated to form conductive vias that fill the holes and that are soldered to the contacts of the circuit component.

A method of manufacturing a semiconductor laser element includes: first dividing a substrate to produce a divided substrate including waveguides spaced apart in a second direction, the substrate being a substrate on which a nitride-based semiconductor laser stacking structure including waveguides extending in the first direction is formed; cleaving the divided substrate in the second direction to produce a semiconductor laser element including waveguides; and second dividing the semiconductor laser element in the first direction to remove an end portion of the semiconductor laser element in the second direction. The cleaving includes: forming, on the divided substrate, a cleavage lead-in groove extending in the second direction; and cleaving the divided substrate using the cleavage lead-in groove. In the second dividing, a portion including the cleavage lead-in groove is removed as the end portion of the semiconductor laser element in the second direction.

In an embodiment a method includes providing a plurality of radiation-emitting semiconductor chips configured to emit primary radiation of a first wavelength range, applying a converter on the plurality of radiation-emitting semiconductor chips, the converter configured to emit secondary radiation of a second wavelength range, applying a mirror layer sequence arranged downstream of the converter, the mirror layer sequence configured to reflect the primary radiation and transmit the secondary radiation and singulating the plurality of radiation-emitting semiconductor chips in order to produce optoelectronic components, wherein the converter is applied on the plurality of radiation-emitting semiconductor chips by spray coating, and wherein the mirror layer sequence is applied on the converter by sputtering, atomic layer deposition and/or plasma-enhanced chemical vapor deposition (PECVD).

Embodiments of the present invention include an apparatus for generating laser radiation with a semiconductor substrate, an intermediate layer arranged on the semiconductor substrate, and a Lateral Current Injection (LCI) laser arrangement arranged on the intermediate layer, wherein the intermediate layer includes a cavity extending at least under a laser strip of the LCI laser arrangement.

There are provided a light emitting device capable of forming a light emitting element on a suitable substrate and a method of manufacturing the same.

A light emitting device according to the present disclosure includes: a first substrate; a plurality of light emitting elements that are provided on a first surface of the first substrate; and a second substrate that is provided on a second surface of the first substrate opposite to the first surface.

Gallium and nitrogen containing optical devices operable as laser diodes and methods of forming the same are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length, a dimension of less than 150 microns characterizing the width of the chip. The devices have a cavity oriented substantially parallel to the length of the chip.