A system for pumping laser sustained plasma is disclosed. The system includes a plurality of pump modules configured to generate respective pulses of pump illumination for the laser sustained plasma, wherein at least one pump module is configured to generate a train of pump pulses that is interlaced in time with another train of pump pulses generated by at least one other pump module of the plurality of pump modules. The system further includes a plurality of non-collinear illumination paths configured to direct the respective pulses of pump illumination from the plurality of pump modules into a collection volume of the laser sustained plasma.

The present disclosure describes broadband optical emission sources that include a stack of semiconductor layers, wherein each of the semiconductor layers is operable to emit light of a different respective wavelength; a light source operable to provide optical pumping for stimulated photon emission from the stack; wherein the semiconductor layers are disposed sequentially in the stack such that a first one of the semiconductor layers is closest to the light source and a last one of the semiconductor layers is furthest from the light source, and wherein each particular one of the semiconductor layers is at least partially transparent to the light generated by the other semiconductor layers that are closer to the light source than the particular semiconductor layer. The disclosure also describes various spectrometers that include a broadband optical emission device, and optionally include a tuneable wavelength filter operable to allow a selected pass through.

A security or identification device comprises a membrane laser structure configured to be optically pumped. The membrane laser structure comprises a flexible emission layer comprising a gain material; and one or more structures formed in or associated with the flexible emission layer and configured to provide optical feedback in the emission layer to produce a laser light output having at least one property representing an identifier.

A collinear T-cavity VECSEL system generating intracavity Hermite-Gaussian modes at multiple wavelengths, configured to vary each of these wavelengths individually and independently. A mode converter element and/or an astigmatic mode converter is/are aligned intracavity to reversibly convert the Gaussian modes to HG modes to Laguerre-Gaussian modes, the latter forming the system output having any of the wavelengths provided by the spectrum resulting from nonlinear frequency-mixing intracavity (including generation of UV, visible, mid-IR light). The laser system delivers Watt-level output power in tunable high-order transverse mode distribution.

Techniques are provided for controlling an output laser pulse signal of a medical device. A control device defines a time duration of capacitive discharge to a laser device. The time duration corresponds to an intended energy of the output laser pulse signal. The control device generates a plurality of sub-pulse control signals. The sub-pulse control signals define a series of capacitive discharge events of the capacitor bank. The control device modulates one or more of a sub-pulse control signal period or a sub-pulse time duration of the sub-pulse control signals to modify the capacitive discharge of the capacitor bank to the laser device during the time duration.

A method for generating single optical pulses of picosecond-range duration with suppressed transient emission tails.

A method for generating single optical pulses of picosecond-range duration with suppressed transient emission tails.

A microelectromechanical systems (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) in which the MEMS mirror is bonded to the active region. This allows for a separate electrostatic cavity that is outside the laser's optical resonant cavity. Moreover, the use of this cavity configuration allows the MEMS mirror to be tuned by pulling the mirror away from the active region. This reduces the risk of snap down. Moreover, since the MEMS mirror is now bonded to the active region, much wider latitude is available in the technologies that are used to fabricate the MEMS mirror. This is preferably deployed as a swept source in an optical coherence tomography (OCT) system.

A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and a semiconductor device package including the semiconductor device. The active layer includes a plurality of barrier layers and a plurality of well layers. The second conductive semiconductor layer includes a conductive second semiconductor layer and a conductive first semiconductor layer provided on the conductive second semiconductor layer. The conductive second semiconductor layer has a higher aluminum composition than the well layers, and the conductive first semiconductor layer has a lower aluminum composition than the well layers.

A vertical cavity surface emitting laser (VCSEL) has a shortened overall laser cavity by combining the gain section with a distributed Bragg reflector (DBR). The overall cavity length can be contracted by placing gain structures inside the DBR. This generally applies to a number of semiconductor material systems and wavelength bands, but this scheme is very well suited to the AlGaAs/GaAs material system with strained InGaAs quantum wells as a gain medium, for example.