Described are methods and a system for atomic memory operations with contended cache lines. A processing system includes at least two cores, each core having a local cache, and a lower level cache in communication with each local cache. One local cache configured to request a cache line to execute an atomic memory operation (AMO) instruction, receive the cache line via the lower level cache, receive a probe downgrade due to other local cache requesting the cache line prior to execution of the AMO, and send the AMO instruction to the lower level cache for remote execution in response to the probe downgrade.

Provided is a method for producing a wavelength conversion sintered body that emits light under irradiation of excitation light. The method for producing a wavelength conversion sintered body includes: preparing a molded body obtained by molding a mixture containing an α-SiAlON fluorescent material and aluminum oxide particles and having a content of Ga of 15 ppm by mass or less; and primary calcining the molded body at a temperature in a range of 1,370° C. or more and 1,600° C. or less to obtain a first sintered body.

In the present disclosure, in an EADFB laser in which an SOA has been integrated, a new configuration in which a problem of deterioration of optical waveform quality and insufficient optical output is solved or mitigated while taking advantage of characteristics that the same layer structure can be used and a manufacturing process can be simplified is shown. In an optical transmitter of the present disclosure, a waveguide structure having different core widths (waveguide widths) is adopted while using the same layer structure for a DFB laser and the SOA. Waveguides with different core widths are adopted so that a problem of insufficient saturated optical output or waveform deterioration due to a pattern effect is solved and mitigated. A passive waveguide region having a tapered shape is introduced in a part between an EA modulator and the SOA so that a waveguide width is continuously changed.

A synthesizer including a controller configured to receive a first signal. A digital-to-analog converter (DAC) is coupled to the controller and is configured to generate a voltage bias based on the first signal. The voltage bias corresponds to a target resonant frequency. A semiconductor laser is coupled to the DAC and is configured to receive a second signal tone. The semiconductor laser generates a plurality of tone signals having octave multiples of a base sub-harmonic tone of the second signal tone.

A collinear T-cavity VECSEL system generating intracavity Hermite-Gaussian modes at multiple wavelengths, configured to vary each of these wavelengths individually and independently. A mode converter element and/or an astigmatic mode converter is/are aligned intracavity to reversibly convert the Gaussian modes to HG modes to Laguerre-Gaussian modes, the latter forming the system output having any of the wavelengths provided by the spectrum resulting from nonlinear frequency-mixing intracavity (including generation of UV, visible, mid-IR light). The laser system delivers Watt-level output power in tunable high-order transverse mode distribution.

An optical waveguide structure includes a lower cladding layer positioned on a substrate; an optical guide layer positioned on the lower cladding layer; an upper cladding layer positioned on the optical guide layer; and a heater positioned on the upper cladding layer. The lower cladding layer, the optical guide layer, and the upper cladding layer constitute a mesa structure. The optical guide layer has a lower thermal conductivity than the upper cladding layer. An equation “W.sub.wg≤W.sub.mesa≤3×W.sub.wg” is satisfied, wherein W.sub.mesa represents a mesa width of the mesa structure, and W.sub.wg represents a width of the optical guide layer. The optical guide layer occupies one-third or more of the mesa width in a width direction of the mesa structure.

A method for a calibration of at least one laser diode, in particular at least one laser diode of a laser projection device. The at least one laser diode is calibrated on the basis of a comparison of at least one currently acquired characteristic value of the at least one laser diode with at least one characteristic value, stored in at least one database, of a model laser diode that is at least substantially identical in construction to the at least one laser diode.

A light emitting device includes a semiconductor light source device including a plurality of semiconductor light emitting elements, a wavelength conversion member that converts a wavelength of irradiation light from the semiconductor light source device, a concentrating lens that concentrates the irradiation light from the semiconductor light source device, and a cylindrical holder. The semiconductor light source device, the wavelength conversion member and the concentrating lens is supported by a support portion provided in an inner diameter portion of the cylindrical holder.

A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.

In some implementations, a thermally-controlled photonic structure may include a suspended region that is suspended over a substrate; a plurality of bridge elements connected to the suspended region and configured to suspend the suspended region over the substrate, where a plurality of openings are defined between the plurality of bridge elements; and at least one heater element having a modulated width disposed on the suspended region. The at least one heater element having the modulated width may include at least one section of a greater width and at least one section of a lesser width. The at least one section of the greater width may be in alignment with an opening of the plurality of openings and the at least one section of the lesser width may be in alignment with a bridge element of the plurality of bridge elements.