An optical semiconductor device includes: a semiconductor substrate including a first main surface and a second main surface; a stacked body that is formed on the first main surface and includes an active layer and a contact layer arranged on a side opposite to the semiconductor substrate with respect to the active layer; a first electrode in contact with the contact layer; and a second electrode formed on the second main surface. The stacked body includes a light transmitting portion formed by not covering at least part of a surface of the contact layer on a side opposite to the semiconductor substrate with the first electrode. The optical semiconductor device is configured such that a waveguide mode is not formed by current application through the first electrode and the second electrode in a state in which the light transmitting portion is not in optical contact with an external member.

A method for manufacturing a light emitting device can include providing a substrate; forming a first active layer with a first electrical polarity; forming a light emitting region configured to emit light with a target wavelength between 200 nm and 300 nm; forming a second active layer with a second electrical polarity; forming a first electrical contact layer, optionally comprising a first optical reflector; removing a portion of the first electrical contact layer, the second active layer, the light emitting region, and the first active layer to form a plurality of mesas; and forming a second electrical contact layer. Each mesa can include a mesa width smaller than 10 times the target wavelength that confines the emitted light from the light emitting region to fewer than 10 transverse modes, or a mesa width smaller than twice a current spreading length of the light emitting device.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.

The invention relates to a semiconductor laser comprising a semiconductor layer arrangement, having an active zone for radiation generation, as well as comprising a first resonator mirror, a second resonator mirror and a resonator arranged between the first and the second resonator mirror, which ends in a direction parallel to a main surface of the semiconductor layer arrangement. The semiconductor laser also comprises a first wavelength-selective absorption element which is arranged between the semiconductor layer arrangement and the first resonator mirror.

A vehicle component, and a method and tool for forming the component are provided. First and second tools with first and second surfaces, respectively, are provided. The first tool is translated along a first axis towards the second tool such that the first and second surfaces cooperate to define a mold cavity configured to form an accessory mount feature with an aperture. The second surface is configured to form an integrated rib extending outwardly from an upper surface of the mount feature to a planar bearing surface surrounding the aperture with the planar bearing surface oriented at an acute angle relative to the upper surface. The first axis is substantially parallel to the upper surface.

In order to provide a QCL element operating in the near-infrared wavelength range, the present disclosure provides a quantum cascade laser element 1000 having a semiconductor superlattice structure (QCL structure 100) sandwiched between a pair of conductive sections 20 and 30. The semiconductor superlattice structure serves as an active region that emits electromagnetic waves. The active region has a plurality of unit structures 10U that are stacked on top of each other. Each unit structure includes four well layers 10W1-10W4 of a composition of Al.sub.xGa.sub.1−xN, separated from each other by barrier layers 10B1-10B5 of a composition of Al.sub.yGa.sub.1−yN with 0≤x<y≤1. Both of the conductive sections in the pair of conductive sections have a refractive index lower than that of the active region in which doped TCO inserted as a key role.

The semiconductor laser diode includes a semiconductor layer sequence having an active zone. The semiconductor layer sequence has a shape of a generalized cylinder or a frustum, and a main axis of the semiconductor layer sequence is perpendicular to a main extension plane of the semiconductor layer sequence. The semiconductor layer sequence has a core region and an edge region directly adjacent to the core region. The main axis passes through the core region. The edge region borders the core region in directions perpendicular to the main axis. The semiconductor layer sequence has a larger refractive index in the core region than in the edge region.

A columnar portion is formed by etching parts of an active layer and a first reflective layer. In this etching process, the columnar portion is formed by etching the first reflective layer to a position of a semiconductor layer. For example, it is etched to a thickness of approximately 3 μm.

The present invention is directed to wearable display technologies. More specifically, various embodiments of the present invention provide wearable augmented reality glasses incorporating projection display systems where one or more laser diodes are used as light source for illustrating images with optical delivery to the eye using transparent waveguides. In one set of embodiments, the present invention provides wearable augmented reality glasses incorporating projector systems that utilize transparent waveguides and blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides wearable augmented reality glasses incorporating projection systems having digital lighting processing engines illuminated by blue and/or green laser devices with optical delivery to the eye using transparent waveguides. In one embodiment, the present invention provides wearable augmented reality glasses incorporating a 3D display system with optical delivery to the eye using transparent waveguides. There are other embodiments as well.