A transmitting unit of a LIDAR device includes at least two radiation sources for generating and emitting punctiform or linear electromagnetic beams into a scanning range, at least one of the radiation sources including an operating temperature settable as a function of an emission angle of the electromagnetic beams generated by the at least one radiation source. The different operating temperatures can generate beams having angle-dependent emission wavelengths, which can result in an improvement of the signal-to-noise ratio of a LIDAR device.

A beam generating device includes a semiconductor substrate, having an optical passband. A first array of vertical-cavity surface-emitting lasers (VCSELs) is formed on a first face of the semiconductor substrate and are configured to emit respective laser beams through the substrate at a wavelength within the passband. A second array of microlenses is formed on a second face of the semiconductor substrate in respective alignment with the VCSELs so as to transmit the laser beams generated by the VCSELs. The VCSELs are configured to be driven to emit the laser beams in predefined groups in order to change a characteristic of the laser beams.

A laser diode apparatus has a first waveguide layer including a gain region connected in series with a second waveguide layer with a second gain region. A tunnel junction is positioned between the first and second guide layers. A single collimator is positioned in an output path of laser beams emitted from the first and second waveguide layers. The optical beam from the single collimator may be coupled into an optical fiber.

A light detecting element is realized in which a length thereof is reduced in a direction perpendicular to a direction in which light detecting regions are disposed side by side. A light detecting element includes a light detecting surface provided with a plurality of light detecting regions disposed side by side in a first direction and a plurality of wiring regions electrically connected to the plurality of light detecting regions. Of the plurality of wiring regions, a plurality of the wiring regions connected to a plurality of the light detecting regions are provided in an end region that is a region excluding a central region at the light detecting surface.

A laser device is provided. The laser device includes a case, a plurality of light-emitting assemblies, an upper cover assembly and a stress-offsetting structure. The case includes a bottom plate and a frame body. The frame body is disposed on the bottom plate, and is enclosed on the bottom plate to form an accommodating space with an opening. The plurality of light-emitting assemblies is located in the accommodating space and are disposed on the bottom plate. The upper cover assembly is fixed to the case and covers the opening. The stress-offsetting structure is disposed in the frame body and/or in the upper cover assembly, and is configured to be contracted in a squeezing direction when the stress-offsetting structure is squeezed.

A monolithic edge emitting semiconductor laser comprising multiple laser diodes using aluminum indium gallium arsenide phosphide AlInGaAs/InGaAsP/InP material system, emitting in long wavelengths (1250 nm to 1720 nm). Each laser diode contains an active region comprising aluminium indium gallium arsenide quantum wells (AlInGaAs QW) and aluminum indium gallium arsenide (AlInGaAs) barriers and is connected to the subsequent monolithic laser diode by highly doped, low bandgap and low resistive indium gallium arsenide junction called tunnel junction.

The invention relates to a laser assembly (1) comprising a diode laser bar (2), a heat sink (4) and at least one cover (7). The laser bar is located between the heat sink and the cover. The heat sink and/or the cover is/are coated with nanowires (16) or nanotubes via which the contact between the laser bar and the heat sink and/or the cover is established.

A laser device includes a laser configured to generate laser light and a laser control module configured to receive at least a portion of the laser light generated by the laser, to generate a control signal and to feed the control signal back to the laser for stabilizing the frequency, wherein the laser control module includes a tunable frequency discriminating element which is preferably continuously frequency tunable, and where the laser control module is placed outside the laser cavity.

A method for the production of a diode laser having a laser bar, wherein a metal layer having raised areas is used which is located between the n-side of the laser bar and the cover. The metal layer can be plastically deformed during installation without volume compression in the solid physical state. As a result the laser module can be reliably installed and a slight deviation (smile value) of the emitters from a centre line is achieved.

A light-emitting device includes: a base including: a mount surface, and a lateral wall located around the mount surface, the lateral wall including: a pair of first protrusions located opposite to each other in a first direction which is parallel to a side of the mount surface, and a pair of second protrusions located opposite to each other in a second direction which is perpendicular to the first direction, the second protrusions being provided lower than the first protrusions; one or more light-emitting elements mounted on the mount surface of the base; a first light-transmissive member sealing a space in which the one or more light-emitting elements are mounted; and one or more wires connecting to the one or more light-emitting elements, the one or more wires being bonded on conduction regions provided on at least one of upper surfaces of the second protrusions.