There is provided a device to generate an output light. The device comprises a substrate, a quantum well structure (QWS) disposed on the substrate, and a waveguide disposed on the substrate and in contact with the QWS. The QWS has a first layer, a second layer, and a third layer. The second layer is disposed and quantum-confined between the first layer and the third layer. In addition, the second layer is to emit an input light when electrically biased. The input light has an optical field extending outside the QWS and into the waveguide, to optically couple the waveguide with the QWS. The waveguide is to provide an optical resonance cavity for the input light. Moreover, the waveguide has an optical outlet to transmit at least some of the input light out of the waveguide to generate the output light.

A light emitting apparatus has light emitting units. The light emitting units can be respectively provided with current densities, so that the light emitted by each of the light emitting unit has a light intensity, wherein the current densities are different from each other, or partial of the current densities are different from each other. A number of the light emitting units can be larger than or equal to four, all of the four lighting frequencies of the four light emitting units are different from each other, or partial of the four lighting frequencies of the four light emitting units are identical to each other, and the light emitting apparatus and the object under test rotate relative to each other. A light emitting method, a spectrum detection method and a lighting correction method are also illustrated for increasing SNR, correcting the light intensity or the spectrum signal.

Methods, devices, and systems for double-sided cooling of laser diodes are provided. In one aspect, a laser diode assembly includes a first heat sink, a plurality of submounts spaced apart from one another on the first heat sink, a plurality of laser diodes, and a second heat sink on top sides of the plurality of laser diodes. Each laser diode includes a corresponding active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer. A bottom side of each laser diode is positioned on a different corresponding submount of the plurality of submounts. The plurality of laser diode are electrically connected in series.

Methods, devices, and systems for laser diode packaging platforms are provided. In one aspect, a laser diode assembly includes a heat sink and a plurality of laser diode units horizontally spaced apart from one another on the heat sink. Each laser diode unit includes: a first submount positioned on the heat sink and spaced apart from adjacent another first submount, a laser diode including an active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer, a bottom side of the laser diode being positioned on the first submount, and a second submount positioned on a top side of the laser diode and spaced apart from adjacent another second submount. The first submount, the laser diode, and the second submount in the laser diode unit are vertically positioned on the heat sink. The laser diodes of the plurality of laser diode units are electrically connected in series.

A system and method of providing a deformed FAC Lens to a multi-emitter diode bar laser system comprised of a lens holder and FAC lens wherein the FAC Lens is deformed so as to offset or compensate for the inherent smile properties present in a multi-emitter diode bar.

A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.

The invention relates to a method, an arrangement and an array, in which a structured contact layer and an elastic carrier layer arranged on a first side of the structured contact layer and connected to the structure contact layer by means of a bonded connection is produced, and in which at least one optoelectronic semiconductor component is arranged on the structured contact layer, on a second side of the structured contact layer, opposing the first side, and is electrically and mechanically connected to the structured contact layer, an elastic conversion layer in an irradiation region being applied to the structured contact layer and the elastic carrier layer in such a way that at least the optoelectronic semiconductor component is embedded in the conversion layer, at least in sections, and a connection region of the structure contact layer remains uncovered.

Provided is an optical phased array including a light injector, a first splitter connected to the light injector, a first phase shifter connected to the first splitter, a plurality of waveguides connected to the first splitter, portions of the plurality of waveguides being connected to the first splitter via the first phase shifter, an antenna array connected to the plurality of waveguides, a single mode filter provided in each of the plurality of waveguides, and a first photodetector connected to the first splitter and configured to detect a portion of light radiated onto the antenna array.

A light emitting element (semiconductor laser element) includes a multilayer structure in which a substrate, semiconductor layers to, an insulating layer, and a metal layer are stacked in order. The light emitting element includes a plurality of light emitting portions each of which emits a laser beam. The plurality of light emitting portions each include a ridge (ridge waveguide). The distance from a specific position in an active region in at least one of the light emitting portions to an inner surface of the metal layer is different from that in another of the light emitting portions.

In a WBC system of the present disclosure, an LD bar array constituted by a plurality of LD bars is configured such that a main axis direction of an off-angle of at least one LD bar is reversed with respect to a main axis direction of an off-angle of the other LD bar. By doing so, even in the LD bar in which a wavelength distribution in a wafer exists, a difference between a designed lock wavelength and a gain peak wavelength can be kept within a range where an LD oscillation due to an external resonance is possible for all emitters in the LD bar, thereby an output in the WBC system can be maximized.